technische information / technical information igbt-module igbt-modules bsm 30 gd 60 dlc e3224 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 600 v kollektor-dauergleichstrom t c = 70c i c,nom. 30 a dc-collector current t c = 25 c i c 40 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 70c i crm 60 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 135 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 30 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 60 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 240 a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 2,5 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 30a, v ge = 15v, tvj = 25c - 1,95 2,45 v collector-emitter saturation voltage i c = 30a, v ge = 15v, t vj = 125c - 2,20 - v gate-schwellenspannung gate threshold voltage i c = 0,7ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f = 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c ies - 1,3 - nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 0,1 - nf kollektor-emitter reststrom v ce = 600v, v ge = 0v, t vj = 25c - 1 500 a collector-emitter cut-off current v ce = 600v, v ge = 0v, t vj = 125c -1-ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: andreas vetter date of publication: 2000-04-26 approved by: michael hornkamp revision: 1 v ce sat i ces 1 (8) bsm 30 gd 60 dlc e3224 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 30 gd 60 dlc e3224 charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 30a, v cc = 300v turn on delay time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t d,on -30-ns v ge = 15v, r g = 6,8 ? , t vj = 125c -32-ns anstiegszeit (induktive last) i c = 30a, v cc = 300v rise time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t r - 6,5 - ns v ge = 15v, r g = 6,8 ? , t vj = 125c -7-ns abschaltverz?gerungszeit (ind. last) i c = 30a, v cc = 300v turn off delay time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t d,off -75-ns v ge = 15v, r g = 6,8 ? , t vj = 125c -85-ns fallzeit (induktive last) i c = 30a, v cc = 300v fall time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t f -12-ns v ge = 15v, r g = 6,8 ? , t vj = 125c -18-ns einschaltverlustenergie pro puls i c = 30a, v cc = 300v, v ge = 15v turn-on energy loss per pulse r g = 6,8 ? , t vj = 125c, l = 15nh abschaltverlustenergie pro puls i c = 30a, v cc = 300v, v ge = 15v turn-off energy loss per pulse r g = 6,8 ? , t vj = 125c, l = 15nh kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc =360v, v cemax =v ces -l ce di/dt modulinduktivit?t stray inductance module l ce - 60 - nh modul-leitungswiderstand, anschlsse - chip lead resistance, terminals - chip t c = 25c r cc'+ee' - 8,0 - m ? charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 30 a, v ge = 0v, t vj = 25c v f - 1,25 1,6 v forward voltage i f = 30 a, v ge = 0v, t vj = 125c - 1,20 - v rckstromspitze i f = 30 a, - di f /dt = 1400a/sec peak reverse recovery current v r = 300v, vge = -15v, t vj = 25c i rm -62- a v r = 300v, vge = -15v, t vj = 125c -64- a sperrverz?gerungsladung i f = 30 a, - di f /dt = 1400a/sec recovered charge v r = 300v, vge = -15v, t vj = 25c q r - 2,1 - as v r = 300v, vge = -15v, t vj = 125c - 3,3 - as abschaltenergie pro puls i f = 30 a, - di f /dt = 1400a/sec reverse recovery energy v r = 300v, vge = -15v, t vj = 25c e rec ---mws v r = 300v, vge = -15v, t vj = 125c - 0,9 - mws e off e on i sc 0,3 - - mws 0,8 - - mws - 135 - a 2 (8) bsm 30 gd 60 dlc e3224 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 30 gd 60 dlc e3224 thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc - - 0,9 k/w thermal resistance, junction to case diode/diode, dc - - 1,4 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module paste = 1 w/m*k / grease = 1 w/m*k r thck - 0,02 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 cti comperative tracking index 225 anzugsdrehmoment f. mech. befestigung + 15% / -15% 4 nm mounting torque -15 +15 % anzugsdrehmoment f. elektr. anschlsse -nm terminal connection torque -nm gewicht weight g 180 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. m 3 (8) bsm 30 gd 60 dlc e3224 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 30 gd 60 dlc e3224 i c [a] v ce [v] i c [a] v ce [v] 0 10 20 30 40 50 60 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 10 20 30 40 50 60 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 8v vge = 9v vge = 10v vge = 12v vge = 15v vge = 20v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4 (8) bsm 30 gd 60 dlc e3224 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 30 gd 60 dlc e3224 i c [a] v ge [v] i f [a] v f [v] 0 10 20 30 40 50 60 5678910111213 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 10 20 30 40 50 60 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5 (8) bsm 30 gd 60 dlc e3224 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 30 gd 60 dlc e3224 e [mj] i c [a] e [mj] r g [ ? ? ? ? ] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 0 5 10 15 20 25 30 35 40 45 50 55 60 eon eoff erec 0,0 0,2 0,4 0,6 0,8 1,0 1,2 0 5 10 15 20 25 30 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) i c = 30a , v cc = 300v , t vj = 125c schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) r g,on = 6,8 ?, ?, ?, ?, = = = = r g,off = 6,8 ? ? ? ? , v cc = 300v, t vj = 125c 6 (8) bsm 30 gd 60 dlc e3224 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 30 gd 60 dlc e3224 z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 38,1 471,6 317,2 73,1 i [sec] : igbt 0,0018 0,0240 0,0651 0,6626 r i [k/kw] : diode 493,4 473,2 297,2 136,3 i [sec] : diode 0,0487 0,0169 0,1069 0,9115 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) r g,off = 6,8 ? ? ? ? , t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 20 40 60 80 0 100 200 300 400 500 600 700 ic,modul ic,chip 0,01 0,1 1 10 0,001 0,01 0,1 1 10 100 zth:igbt zth:diode 7 (8) bsm 30 gd 60 dlc e3224 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 30 gd 60 dlc e3224 geh?usema?e / schaltbild package outline / circuit diagram 8 (8) bsm 30 gd 60 dlc e3224 2000-02-08
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