2001-08-21 page 1 preliminary data BSO301SN optimos = == = small-signal-transistor product summary v ds 30 v r ds ( on ) 7.8 m i d 13 a feature n-channel enhancement mode logic level excellent gate charge x r ds ( on ) product (fom) superior thermal resistance 150c operating temperature avalanche rated d v /d t rated type package ordering code BSO301SN so 8 q67040-s4345 marking 301sn maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c i d 13 a pulsed drain current t a =25c i d puls 52 avalanche energy, single pulse i d =13 a , v dd =25v, r gs =25 e as 230 mj reverse diode d v /d t i s =13a, v ds =24v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t a =25c p tot 2.5 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/56
2001-08-21 page 2 preliminary data BSO301SN thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - - k/w smd version, device on pcb: @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. r thja - - - - 110 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 30 - - v gate threshold voltage, v gs = v ds i d =80a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 10 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =11a r ds(on) - 9.3 10.9 m drain-source on-state resistance v gs =10v, i d =13a r ds(on) - 6.7 7.8 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2001-08-21 page 3 preliminary data BSO301SN electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =11.6a 13.7 27.4 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1770 2213 pf output capacitance c oss - 740 925 reverse transfer capacitance c rss - 165 206 gate resistance r g - 1.3 - turn-on delay time t d(on) v dd =15v, v gs =10, i d =11a, r g =2.2 - 9 13.5 ns rise time t r v dd =15v, v gs =10v, i d =11a, r g =2.2 - 44 66 turn-off delay time t d(off) - 10 15 fall time t f - 32 48 gate charge characteristics gate to source charge q gs v dd =15v, i d =13a - 4.9 6.1 nc gate to drain charge q gd - 12.8 16 gate charge total q g v dd =15v, i d =13a, v gs =0 to 10v - 46.3 56.6 gate plateau voltage v (p lateau ) v dd =15v, i d =13a - 2.7 - v reverse diode inverse diode continuous forward current i s t a =25c - - 2.2 a inverse diode direct current, pulsed i sm - - 52 inverse diode forward voltage v sd v gs =0v, i f =2.2a - 0.85 1.13 v reverse recovery time t rr v r =15v, i f = l s , d i f /d t =100a/s - 32 48 ns reverse recovery charge q rr - 43.6 70 nc
2001-08-21 page 4 preliminary data BSO301SN 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 w 2.8 BSO301SN p tot 2 drain current i d = f ( t a ) parameter: v gs 10 v 0 20 40 60 80 100 120 c 160 t a 0 1 2 3 4 5 6 7 8 9 10 11 12 a 14 BSO301SN i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 -1 10 0 10 1 10 2 v v ds -2 10 -1 10 0 10 1 10 2 10 a BSO301SN i d r d s ( o n ) = v d dc 10 ms 1 ms t p = 230.0 s 4 transient thermal impedance z thjs = f ( t p ) parameter : d = t p / t 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w BSO301SN z thjs single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2001-08-21 page 5 preliminary data BSO301SN 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 4 8 12 16 20 24 a 32 BSO301SN i d v gs [v] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 6.0 h p tot = 2.5 w h 10.0 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 4 8 12 16 20 a 26 i d 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.026 BSO301SN r ds(on) v gs [v] = b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 6.0 h h 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gs 0 10 20 30 40 a 60 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 10 20 30 40 50 a 70 i d 0 5 10 15 20 25 30 35 40 s 50 g fs
2001-08-21 page 6 preliminary data BSO301SN 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 13 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.002 0.004 0.006 0.008 0.01 0.012 0.016 BSO301SN r ds(on) typ 98% 10 gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 80 a -60 -20 20 60 100 c 160 t j 0 0.5 1 1.5 v 2.5 v gs(th) max. typ. min. 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a BSO301SN i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 pf c c iss c rss c oss
2001-08-21 page 7 preliminary data BSO301SN 13 typ. avalanche energy e as = f ( t j ) par.: i d = 13 a , v dd = 25 v, r gs = 25 25 50 75 100 c 150 t j 0 20 40 60 80 100 120 140 160 180 200 mj 240 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 13 a pulsed 0 10 20 30 40 50 nc 70 q gate 0 2 4 6 8 10 12 v 16 BSO301SN v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 c 180 t j 27 28 29 30 31 32 33 34 v 36 BSO301SN v (br)dss
2001-08-21 page 8 preliminary data BSO301SN published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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