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application note document no. P13914EJ1V0AN00 (1st edition) date published march 1999 n cp (k) printed in japan 1999 ? low-current silicon mmic amplifiers for cellular/cordless telephones usage and applications of m m m m pc8128tb, m m m m pc8151tb, and m m m m pc8152tb
2 application note P13914EJ1V0AN00 [memo]
3 application note P13914EJ1V0AN00 nesat is an abbreviation of nec silicon advanced technology, and is a trademark of nec corporation. this document outlines a typical application of this product, that is, provides an example for designing concept of an external circuit directly required for this product. nec only assures the quality and characteristics of this product specified in this data sheet, and is not responsible for any users product designs or application sets. the peripheral circuit shown in this document is just an example prepared for evaluating the operations of this product, and does not imply that the circuit configurations or constants are recommended values or regulations. in addition, these circuits are not intended for any mass-produced application sets. this is because the analog characteristics vary depending on the external parts used, mounting patterns, and other conditions. for this reason, customers are responsible for designing external circuits according to use-designed system requirements by referring this document, and should also confirm the characteristics of their application circuit before use. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or of others. m4a 96. 10 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. the information in this document will be updated without notice.
4 application note P13914EJ1V0AN00 contents 1. introduction ................................................................................................................. .................... 5 2. product line-up ............................................................................................................. ................. 6 2.1 characteristics............................................................................................................. ................. 6 2.2 system application example .................................................................................................. .... 8 3. theoretical description ..................................................................................................... ....... 9 3.1 description of internal circuits ............................................................................................ ....... 9 3.2 description of external circuits............................................................................................ ...... 9 3.3 test circuit ................................................................................................................ .................. 10 4. sample application characteristics................................................................................... 12 4.1 application characteristics for various matching methods .................................................. 12 4.2 characteristics for if band tuning.......................................................................................... .14 4.2.1 m pc8128tb characteristics for 130-mhz tuning ..........................................................................15 4.2.2 m pc8128tb characteristics for 240-mhz tuning ..........................................................................17 4.2.3 m pc8151tb characteristics for 130-mhz tuning ..........................................................................19 4.2.4 m pc8151tb characteristics for 240-mhz tuning ..........................................................................21 4.2.5 m pc8152tb characteristics for 130-mhz tuning ..........................................................................23 4.2.6 m pc8152tb characteristics for 240-mhz tuning ..........................................................................25 5. summary ...................................................................................................................... ...................... 28 6. conclusion ................................................................................................................... ................... 29 appendix s parameter reference values (t a = +25 c) ..................................................... 30 precautions for design-ins (1) observe precautions for handling because of electro-static sensitive devices. (2) form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). all the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) the bypass capacitor should be attached to v cc line. (4) the inductor (l) should be attached between v cc pin and output pin. the l and series capacitor (c2) values should be adjusted for applied frequency to match impedance to next stage. (5) the dc cut capacitor must be attached to input pin. (6) you should apply voltage to v cc pin and output pin. you must not apply voltage to input pin nor regulate input pin voltage (e.g. direct dc pull-down).
5 application note P13914EJ1V0AN00 1. introduction the market for mobile terminals has been expanding continuously in recent years, and as the market share of hand-held unit advances, there is a growing demand for terminals that are more compact and consume less power. in addition, recent trends concerning hand-held unit demand that the integrated circuits (ics) used in this equipment also must become more compact and consume less power. nec has been selling the m pc2714, m pc2715, and m pc2745 to m pc2748 products as local buffer ics for mobile communication systems for some time now. however, to satisfy the demands for compact size, low power consumption, and high isolation, nec has developed and created the m pc8128tb, m pc8151tb, and m pc8152tb low-current silicon microwave monolithic ic (mmic) amplifiers to be used as various types of buffers for mobile communication systems. these application notes introduce the features and application characteristics of these products. see the data sheet for each product for details of the product's ratings, specifications, and usable conditions.
6 application note P13914EJ1V0AN00 2. product line-up 2.1 characteristics table 2-1 shows the line-up of low-current silicon mmic amplifiers for cellular/cordless telephones. table 2-1. low-current silicon mmic amplifiers for cellular/cordless telephones product line-up (t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w ) 1.0-ghz output port matching frequency 1.66-ghz output port matching frequency 1.9-ghz output port matching frequency part number (bulk part number) v cc (v) i cc (ma) g p (db) isl (db) p o (1 db) (dbm) g p (db) isl (db) p o (1 db) (dbm) g p (db) isl (db) p o (1 db) (dbm) marking m pc8128tb 2.8 12.5 39 C4.0 13.0 39 C4.0 13.0 37 C4.0 c2p m pc8151tb 4.2 12.5 38 +2.5 15.0 36 +1.5 15.0 34 +0.5 c2u m pc8152tb 2.4 to 3.3 5.6 23.0 40 C4.5 19.5 36 C8.5 17.5 35 C8.5 c2v remark the above values are typical values for major characteristics. see each product's data sheet for detailed ratings and characteristic, etc. this line-up achieves low-current consumption, high efficiency, and high gain with the power supply voltage in the 3-v range. the low circuit current consumption is approximately 40% of the 5 to 7.5 ma consumed by the existing m pc2745 to m pc2748 products. these products use a 6-pin mini mold package of size 2012. figure 2-1 shows external views of this package (package drawing). due to limited printing space on these mini mold ics, a three-character is marked instead of part number shown on the molds. each three-character marking corresponds to a different part number. due to space limitations, the pin 1 mark is printed on the bottom side. figure 2-2 shows a marking example of these products. taping is used as the supplying form for all products and the part number is "bulk part no. - taping code." for details, refer to the data sheet. all ics in this product line-up have been developed and manufactured using nec's proprietary nesat ? iii silicon bipolar process. for details about this process, refer to the pamphlet entitled "nesat process pamphlet" (document no. p12647e).
7 application note P13914EJ1V0AN00 figure 2-1. package drawing of 6-pin super mini-mold low-current silicon mmic amplifiers 2.0 0.2 1.3 0.65 0.65 1.25 0.1 2.1 0.1 0.2 +0.1 - 0 0.1 min. 0.7 0.9 0.1 0 to 0.1 0.15 +0.1 - 0 (unit: mm) figure 2-2. exterior of the marking example remark the marking example shown in the above figure corresponds to m pc8128tb. 3 2 1 4 5 6 (top view) 4 5 6 3 2 1 (bottom view) c2p
8 application note P13914EJ1V0AN00 2.2 system application example figure 2-3 shows a system block diagram that can be considered as an application example of these ics due to system requirement characteristics. figure 2-3. system block diagram rx sw tx ? n pll pll i q i q demo 0 90 pa f location examples in digital cellular these ics can be added to your system around s parts, when you need more isolation or gain. the application herein, however, shows only examples, therefore the application can depend on your kit evaluation.
9 application note P13914EJ1V0AN00 3. theoretical description 3.1 description of internal circuits the m pc8128tb and m pc8151tb have simple two-stage configurations without negative feedback. the m pc8152tb incorporates 50- w matching circuit formed by resistors on the input side. a multiple negative feedback circuit is provided to offset the variations between hfe and resistance. to obtain desired rf characteristics, a two- stage configuration is employed. figure 3-1 shows an internal equivalent circuit. the output pins of the ics in this product line-up are used to constitute matching circuits externally, and low current consumption is achieved due to open collector output of the output-stage transistor and by high impedance output. for the bias to the output pins, the same voltage as the v cc is applied via the inductor of the matching circuit. figure 3-1. internal equivalent circuits of low-current silicon mmic amplifiers m pc8128tb/8151tb m pc8152tb 2 5 3 6 4 out gnd1 gnd2 v cc 1 in 2 3 gnd1 gnd2 5 6 4 v cc out 1 in 3.2 description of external circuits external circuit configuration by attaching an external inductor to the output pin, the ics in this product line-up can achieve low-current consumption that could not be obtained by conventional internal 50- w wideband matching ics. therefore, a narrowband matching circuit should be configured by using an lc externally attached to the output pin to suit the usage frequency. also, since the m pc8128tb or m pc8151tb does not have an on-chip 50- w matching circuit based on the resistance of the ic's input stage, the input stage return loss increases. to improve the input stage return loss of the m pc8128tb or m pc8151tb, a narrowband matching circuit that suits the usage frequency is also required at the input stage. the following three external circuit configurations can be considered according to the differences of the matching circuits. <1> output isolation matching (no matching for the input stage, and an output stage return loss optimized to approximately 10 to 20 db) <2> output 50- w matching (no matching for the input stage, and matching of the output stage to 50 w ) <3> input/output 50- w matching (matching both of the input and output stages to 50 w )
10 application note P13914EJ1V0AN00 design method for <2> and <3> above, the 50- w matching circuit of the lc should be designed based on the s parameter of the ic while also taking into account mounting circuit board elements. however, for <1>, since definite points cannot be represented on a smith chart, the following procedure must be used to adjust the values. first, match the output stage to 50 w for a standard. next, while using a network analyzer to monitor s12, adjust the mounting position and constants of the externally attached circuit (lc) so that the isolation can be excellent. at nec, excellent isolation was obtained when this procedure was used to adjust the output stage return loss to the range of 10 to 20 db. the circuit constants that appear in these application notes and the data sheets are values for the corresponding evaluation boards. since the evaluation boards, which are designed for simple evaluation, occupy considerable space, they cannot be applied directly in an actual system. the s parameter values (mag and ang) and input/output smith charts of the ics themselves are included in the data sheets and in the appendix of this document for reference by users of matching circuit design. users should optimize the matching circuit constants by referring to this explanation and carefully considering these parameters and the mounting circuit board elements. the characteristic curves that appear in the data sheets were measured by creating a matching circuit that emphasizes isolation (<1> isolation matching). for characteristics in the circuit configurations of <2> and <3>, see table 4-1 measurement results in 4.1 application characteristics for various matching methods . 3.3 test circuit to measure the electrical specifications described in the data sheet, a test circuit was used in which a matching circuit was created by an lc at the output pin. figure 3-2 shows the test circuit used for these ics, and figure 3-3 shows the evaluation board layout. figure 3-2. test circuit in out 50 w l1 4 2,3,5 6 1 50 w c 1 c 2 c 3 v cc c 4 output matching circuit c 5 c 6 c 7
11 application note P13914EJ1V0AN00 this test circuit is used in an nec measurement jig. multiple bypass capacitors are used in the v cc line due to the board pattern design of the nec jig. the number of bypass capacitors should be reduced by optimizing the circuit board pattern when performing an actual application. figure 3-3. evaluation board for m m m m pc8128tb, m m m m pc8151tb, and m m m m pc8152tb notes regarding board examples board material ------ double-sided copper clad polyamide board is used to reduce loss due to the board. back side ------------ entire side is ground pattern. through holes are used to ensure proper grounding for ic mounting side. specifications------- board dimensions: 42 35 0.4 mm, with 35- m m thick copper patterning on both sides. out in pc8128/ 51/52tb top view (printed side) mounting direction marking is an example of the pc8128tb. c6 c4 c5 c3 c1 c2 l1 c2p connector connector m m
12 application note P13914EJ1V0AN00 4. sample application characteristics 4.1 application characteristics for various matching methods the ics in this line-up were turned in a narrow band to a usage frequency within the recommended operating frequency range (100 to 1900 mhz). this section introduces the results of evaluating the characteristics for each matching method. these evaluations where performed according to each of the three matching methods, namely output isolation matching (matching for which isolation is best), output 50- w matching, and input/output 50- w matching, at frequencies of 1.0, 1.66, and 1.9 ghz, using the m pc8128tb. table 4-1 shows the evaluation results and figure 4-1 shows the measurement circuits. the isolation and noise figure values were better for the output isolation matching method than for the other matching methods. since the output return loss and input return loss are improved for the output 50- w matching and input/output 50- w matching methods, the power gain becomes 1 to 2 db higher than for the output isolation matching method. however, the isolation and noise figure results were worse. these evaluation results indicate that when isolation and noise figure characteristics are emphasized, the output isolation matching method is optimum, but when power gain is emphasized even if the isolation and noise figure are made somewhat worse, the methods that match the output and input stages to 50 w are optimum. the points at which isolation was best in these evaluation results (output isolation matching) were obtained by setting the output return loss in the 10 to 20 db range. these evaluations were also performed for the m pc8151tb using the same internal circuits as were used for the m pc8128tb, and similar results were obtained. table 4-1. measurement results test conditions: t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w 1.0-ghz tuning matching method input return loss s11 (db) output return loss s22 (db) power gain s21 (db) isolation s12 (db) noise figure nf (db) output isolation 4.6 15.3 11.7 37.3 5.9 output 50 w 4.6 35.1 12.0 36.7 6.0 input/output 50 w 30.7 27.3 13.6 34.9 6.6 1.66-ghz tuning matching method input return loss s11 (db) output return loss s22 (db) power gain s21 (db) isolation s12 (db) noise figure nf (db) output isolation 5.8 16.6 11.0 41.2 5.9 output 50 w 6.3 26.5 11.0 37.8 6.0 input/output 50 w 30.8 27.6 12.1 35.2 6.7 1.9-ghz tuning matching method input return loss s11 (db) output return loss s22 (db) power gain s21 (db) isolation s12 (db) noise figure nf (db) output isolation 6.0 11.6 11.1 38.3 5.9 output 50 w 6.3 33.1 11.9 36.2 6.0 input/output 50 w 31.7 29.8 12.0 35.5 7.0
13 application note P13914EJ1V0AN00 in out 50 w l1 4 2, 3, 5 6 1 50 w c 2 c 3 c 1 v cc output matching circuit in out 50 w l1 4 2, 3, 5 6 1 50 w c 2 c 3 c 1 v cc output matching circuit figure 4-1. test circuits (1) output isolation matching circuit component list 1.0-ghz tuning 1.66-ghz tuning 1.9-ghz tuning c 1 , c 2 1 000 pf 1 000 pf 1 000 pf c 3 1.0 pf 0.7 pf 0.5 pf l1 8.2 nh 3.3 nh 1.8 nh (2) output 50- w w w w matching circuit component list 1.0-ghz tuning 1.66-ghz tuning 1.9-ghz tuning c 1 , c 2 1 000 pf 1 000 pf 1 000 pf c 3 0.8 pf 0.7 pf 0.6 pf l1 8.2 nh 3.3 nh 1.7 nh notes: used parts for this evaluations c: muratas size 1608 chip capacitor l: tokos ll2012 multilayer chip inductor
14 application note P13914EJ1V0AN00 (3) input/output 50- w w w w matching circuit component list 1.0-ghz tuning 1.66-ghz tuning 1.9-ghz tuning c 1 1 000 pf 1 000 pf 1 000 pf c 2 1.0 pf 1.5 pf 1.5 pf c 3 1 000 pf 1 000 pf 1 000 pf c 4 0.8 pf 0.7 pf 0.6 pf l1 10 nh 1.5 nh 2.7 nh l2 8.2 nh 3.3 nh 1.7 nh 4.2 characteristics for if band tuning although the ics in this line-up were developed as various types of buffer amplifiers for cellular or cordless telephones, the recommended operating frequency range is 100 to 1900 mhz, and these ics can also be used at if- band frequencies. for this section, the characteristics were measured for input/output tunings at operating frequencies of 130 mhz and 240mhz, which are used frequently in the if band. table 4-2 shows the measurement results, and figure 4-2 shows the measurement circuits. when these ics were used in the if band, the power gain was higher and the isolation was better than when they were used in the 1 to 2 ghz range. table 4-2. measurement results test conditions: t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w 130-mhz input/output tuning (output tuning only for the m m m m pc8152tb) part no. input return loss s11 (db) output return loss s22 (db) power gain s21 (db) isolation s12 (db) noise figure nf (db) m pc8128tb 30.8 10.2 17.9 41.5 6.1 m pc8151tb 29.4 11.6 18.7 42.5 6.3 m pc8152tb 26.7 18.8 19.7 51.8 3.1 240-mhz input/output tuning (output tuning only for the m m m m pc8152tb) part no. input return loss s11 (db) output return loss s22 (db) power gain s21 (db) isolation s12 (db) noise figure nf (db) m pc8128tb 37.9 32.3 16.9 36.1 6.2 m pc8151tb 22.3 29.3 16.4 37.3 6.5 m pc8152tb 25.5 21.8 20.2 48.2 3.2 in out 50 w l2 4 2, 3, 5 6 1 50 w c 3 c 2 l1 input matching circuit c 4 c 1 v cc output matching circuit
15 application note P13914EJ1V0AN00 4.2.1 m m m m pc8128tb characteristics for 130-mhz tuning conditions: t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w s 11 ref s 11 - 30.848 db start stop 0.050000000 ghz 0.150000000 ghz 1.0 units 200.0 munits/ 47.223 w 0.8945 w 1 1 1 1 marker 1 130.0 mhz 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 50 100 frequency f (mhz) input return loss rl in (db) 150 s 22 ref s 22 - 10.186 db start stop 0.050000000 ghz 0.150000000 ghz 1.0 units 200.0 munits/ 26.38 w 1.1035 w 1 1 1 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 50 100 frequency f (mhz) output return loss rl out (db) isolation isl (db) power gain g p (db) 150 s 12 - 41.518 db 1 30 20 10 0 10 20 30 - 40 - 50 - 60 - 70 50 100 frequency f (mhz) 150 s 21 17.939 db 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 50 100 frequency f (mhz) 150 1 marker 1 130.0 mhz 1 1 1
16 application note P13914EJ1V0AN00 m m m m pc8128tb characteristics for 130-mhz tuning +5 0 - 5 - 10 - 15 - 20 - 25 output power vs. input power input power p in (dbm) output power p out (dbm) - 40 7 6.5 6 5.5 5 noise figure vs. supply voltage supply voltage v cc (v) noise figure nf (db) 2 2.5 3 3.5 - 30 - 20 - 10 0 - 35 - 25 - 15 - 5+5 +10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 output power of each tone and 3rd order intermodulation distortion vs. input power of each tone input power of each tone p in (each) (dbm) output power of each tone p out (each) (dbm) 3rd order intermodulation distortion im 3 (dbm) - 40 - 30 - 20 - 10 0 - 35 - 25 - 15 - 5+5 t a = +25 c t a = +25 c v cc = 2.4 v v cc = 2.7 v v cc = 3.3 v v cc = 3.0 v t a = +25 c v cc = 3.0 v f 1 = 130 mhz f 2 = 131 mhz im 3 p out (each)
17 application note P13914EJ1V0AN00 4.2.2 m m m m pc8128tb characteristics for 240-mhz tuning conditions: t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w s 11 ref s 11 - 37.92 db start stop 0.200000000 ghz 0.300000000 ghz 1.0 units 200.0 munits/ 50.492 w 1.1777 w 1 1 1 marker 1 240.0 mhz 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 200 250 frequency f (mhz) input return loss r lin (db) 300 s 22 ref s 22 - 32.381 db start stop 0.200000000 ghz 0.300000000 ghz 1.0 units 200.0 munits/ 48.455 w - 1.793 w 1 1 1 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 200 250 frequency f (mhz) output return loss rl out (db) isolation isl (db) power gain g p (db) 300 s 12 - 36.154 db 1 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 200 250 frequency f (mhz) 300 s 21 16.886 db 30 20 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 200 250 frequency f (mhz) 300 marker 1 240.0 mhz 1 1 1 1 1
18 application note P13914EJ1V0AN00 m m m m pc8128tb characteristics for 240-mhz tuning +5 0 - 5 - 10 - 15 - 20 - 25 - 30 - 35 - 40 output power vs. input power input power p in (dbm) output power p out (dbm) - 50 - 40 - 30 - 20 - 10 0 +10 - 45 - 35 - 25 - 15 - 5+5 7 6.5 6 5.5 5 noise figure vs. supply voltage supply voltage v cc (v) noise figure nf (db) 2 2.5 3 3.5 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 output power of each tone and 3rd order intermodulation distortion vs. input power of each tone input power of each tone p in (each) (dbm) output power of each tone p out (each) (dbm) 3rd order intermodulation distortion im 3 (dbm) - 60 - 50 - 40 - 30 - 20 - 10 0 - 55 - 45 - 35 - 25 - 15 - 5+5 t a = +25 c t a = +25 c v cc = 2.4 v v cc = 2.7 v v cc = 3.0 v v cc = 3.3 v t a = +25 c v cc = 3.0 v f 1 = 240 mhz f 2 = 241 mhz p out (each) im 3
19 application note P13914EJ1V0AN00 4.2.3 m m m m pc8151tb characteristics for 130-mhz tuning conditions: t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w s 11 ref s 11 - 29.448 db start stop 0.050000000 ghz 0.150000000 ghz 1.0 units 200.0 munits/ 52.793 w - 2.0508 w 1 1 1 1 marker 1 130.0 mhz 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 50 100 frequency f (mhz) input return loss rl in (db) 150 s 22 ref s 22 - 11.588 db start stop 0.050000000 ghz 0.150000000 ghz 1.0 units 200.0 munits/ 31.99 w 12.297 w 1 1 1 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 50 100 frequency f (mhz) output return loss rl out (db) isolation isl (db) power gain g p (db) 150 s 12 - 42.561 db 1 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 50 100 frequency f (mhz) 150 s 21 18.668 db 30 20 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 50 100 frequency f (mhz) 150 marker 1 130.0 mhz 1 1 1 1
20 application note P13914EJ1V0AN00 m m m m pc8151tb characteristics for 130-mhz tuning +5 0 - 5 - 10 - 15 - 20 - 25 output power vs. input power input power p in (dbm) output power p out (dbm) - 40 8 7.5 7 6.5 6 noise figure vs. supply voltage supply voltage v cc (v) noise figure nf (db) 2 2.5 3 3.5 - 30 - 20 - 10 0 - 35 - 25 - 15 - 5+5 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 output power of each tone and 3rd order intermodulation distortion vs. input power of each tone input power of each tone p in (each) (dbm) output power of each tone p out (each) (dbm) 3rd order intermodulation distortion im 3 (dbm) - 40 - 30 - 20 - 10 0 - 35 - 25 - 15 - 5+5 t a = +25 c im 3 t a = +25 c v cc = 3.0 v v cc = 3.3 v v cc = 2.4 v v cc = 2.7 v t a = +25 c v cc = 3.0 v f 1 = 130 mhz f 2 = 131 mhz p out (each)
21 application note P13914EJ1V0AN00 4.2.4 m m m m pc8151tb characteristics for 240-mhz tuning conditions: t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w s 11 ref s 11 - 22.374 db start stop 0.200000000 ghz 0.300000000 ghz 1.0 units 200.0 munits/ 57.809 w - 2.5215 w 1 1 marker 1 240.0 mhz 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 200 250 frequency f (mhz) input return loss rl in (db) 300 s 22 ref s 22 - 29.324 db start stop 0.200000000 ghz 0.300000000 ghz 1.0 units 200.0 munits/ 52.414 w 2.5352 w 1 1 1 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 200 250 frequency f (mhz) output return loss rl out (db) isolation isl (db) power gain g p (db) 300 s 12 - 37.291 db 1 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 200 250 frequency f (mhz) 300 s 21 16.379 db 30 20 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 200 250 frequency f (mhz) 300 marker 1 240.0 mhz 1 1 1 1 1 1
22 application note P13914EJ1V0AN00 m m m m pc8151tb characteristics for 240-mhz tuning +5 0 -5 -10 -15 -20 -25 -30 -35 -40 output power vs. input power input power p in (dbm) output power p out (dbm) - 50 - 40 - 30 - 20 - 10 0 +10 - 45 - 35 - 25 - 15 - 5+5 7 6.5 6 5.5 5 noise figure vs. supply voltage supply voltage v cc (v) noise figure nf (db) 2 2.5 3 3.5 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 output power of each tone and 3rd order intermodulation distortion vs. input power of each tone input power of each tone p in (each) (dbm) output power of each tone p out (each) (dbm) 3rd order intermodulation distortion im 3 (dbm) -60 -50 -40 -30 -20 -10 0 -55 -45 -35 -25 -15 -5 +5 t a = +25 c t a = +25 c v cc = 3.0 v v cc = 3.3 v v cc = 2.4 v v cc = 2.7 v t a = +25 c v cc = 3.0 v f 1 = 240 mhz f 2 = 241 mhz p out (each) im 3
23 application note P13914EJ1V0AN00 4.2.5 m m m m pc8152tb characteristics for 130-mhz tuning conditions: t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w s 11 ref s 11 - 26.767 db start stop 0.050000000 ghz 0.150000000 ghz 1.0 units 200.0 munits/ 45.729 w 1.0176 w 1 1 1 1 marker 1 130.0 mhz 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 50 100 frequency f (mhz) input return loss rl in (db) 150 s 22 ref s 22 - 18.799 db start stop 0.050000000 ghz 0.150000000 ghz 1.0 units 200.0 munits/ 40.525 w 4.3047 w 1 1 1 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 50 100 frequency f (mhz) output return loss rl out (db) isolation isl (db) power gain g p (db) 150 s 12 - 51.807 db 1 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 50 100 frequency f (mhz) 150 s 21 19.712 db 30 20 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 50 100 frequency f (mhz) 150 marker 1 130.0 mhz 1 1 1 1
24 application note P13914EJ1V0AN00 m m m m pc8152tb characteristics for 130-mhz tuning +5 0 - 5 - 10 - 15 - 20 - 25 output power vs. input power input power p in (dbm) output power p out (dbm) - 40 4 3.5 3 2.5 2 noise figure vs. supply voltage supply voltage v cc (v) noise figure nf (db) 2 2.5 3 3.5 - 30 - 20 - 10 0 - 35 - 25 - 15 - 5+5 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 output power of each tone and 3rd order intermodulation distortion vs. input power of each tone input power of each tone p in (each) (dbm) output power of each tone p out (each) (dbm) 3rd order intermodulation distortion im 3 (dbm) - 40 - 30 - 20 - 10 0 - 35 - 25 - 15 - 5+5 t a = +25 c im 3 t a = +25 c v cc = 3.0 v v cc = 3.3 v v cc = 2.4 v v cc = 2.7 v t a = +25 c v cc = 3.0 v f 1 = 130 mhz f 2 = 131 mhz p out (each)
25 application note P13914EJ1V0AN00 4.2.6 m m m m pc8152tb characteristics for 240-mhz tuning conditions: t a = +25 c, v cc = v out = 3.0 v, z l = z s = 50 w s 11 ref s 11 - 25.499 db start stop 0.200000000 ghz 0.300000000 ghz 1.0 units 200.0 munits/ 46.627 w 3.8691 w 1 1 marker 1 240.0 mhz 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 200 250 frequency f (mhz) input return loss rl in (db) 300 s 22 ref s 22 - 21.865 db start stop 0.200000000 ghz 0.300000000 ghz 1.0 units 200.0 munits/ 46.285 w - 6.9063 w 1 1 1 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 200 250 frequency f (mhz) output return loss rl out (db) isolation isl (db) power gain g p (db) 300 s 12 - 48.166 db 1 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 100 200 250 frequency f (mhz) 300 s 21 20.188 db 50 40 30 20 10 0 - 10 - 20 - 30 - 40 - 50 200 250 frequency f (mhz) 300 marker 1 240.0 mhz 1 1 1 1 1 1
26 application note P13914EJ1V0AN00 m m m m pc8152tb characteristics for 240-mhz tuning +5 0 -5 -10 -15 -20 -25 output power vs. input power input power p in (dbm) output power p out (dbm) -40 4 3.5 3 2.5 2 noise figure vs. supply voltage supply voltage v cc (v) noise figure nf (db) 2 2.5 3 3.5 -30 -20 -10 0 -35 -25 -15 -5 +5 0 -10 -20 -30 -40 -50 -60 -70 -80 output power of each tone and 3rd order intermodulation distortion vs. input power of each tone input power of each tone p in (each) (dbm) output power of each tone p out (each) (dbm) 3rd order intermodulation distortion im 3 (dbm) -40 -30 -20 -10 0 -35 -25 -15 -5 +5 t a = +25 c im 3 t a = +25 c v cc = 3.0 v f 1 = 240 mhz f 2 = 241 mhz p out (each) t a = +25 c v cc = 3.0 v v cc = 3.3 v v cc = 2.4 v v cc = 2.7 v
27 application note P13914EJ1V0AN00 figure 4-2. test circuits (1) m m m m pc8128tb/ m m m m pc8151tb component list 130-mhz input/output tuning 240-mhz input/output tuning c 1 1 000 pf 1 000 pf c 2 2.5 pf 0.5 pf c 3 200 pf 1 000 pf c 4 3.5 pf 1.5 pf l1 180 nh 83 nh l2 270 nh 120 nh (2) m m m m pc8152tb component list 130-mhz input/output tuning 240-mhz input/output tuning c 1 , c 2 1 000 pf 1 000 pf c 3 12 pf 5 pf l1 135 nh 68 nh in out 50 w l2 4 2, 3, 5 6 1 50 w c 3 c 2 l1 input port matching circuit c 4 c 1 v cc output port matching circuit in out 50 w l1 4 2, 3, 5 6 1 50 w c 2 c 3 c 1 v cc output port matching circuit
28 application note P13914EJ1V0AN00 5. summary table 5-1. external circuit configuration and characteristics external circuit configuration main characteristic change emphasized characteristic output isolation matching (no matching for the input stage, and an output stage return loss optimized to approximately 10 to 20 db) isolation and noise figure are better than for the output 50- w matching and input/output 50- w matching methods. isolation and noise figure are emphasized output 50- w matching (no matching for the input stage) as compared with the output isolation matching method, power gain increases by approximately 1 db. isolation worsens by approximately 2 db. power gain and noise figure are emphasized. input/output 50- w matching as compared with the output isolation matching method, power gain increases by approximately 2 db. isolation worsens by approximately 3 db. noise figure worsens by approximately 1 db. power gain is emphasized.
29 application note P13914EJ1V0AN00 6. conclusion these application notes explained the characteristics of application circuits using the m pc8128tb, m pc8151tb, and m pc8152tb, which are a series of low-current silicon mmic amplifiers for cellular/cordless telephones, and presented examples for selecting these ics. we hope that these application notes will be of some assistance to you when you use these silicon mmics. references { data sheets for each product m pc8128tb, m pc8151tb, m pc8152tb (document no. p12549e) m pc2745tb, m pc2746tb (document no. p11511e) m pc2747tb, m pc2748tb (document no. p13444e) { application notes usage and applications of 6-pin mini-mold, 6-pin super mini-mold silicon high-frequency wideband amplifier mmic (document no. p11976e)
30 application note P13914EJ1V0AN00 appendix s parameter reference values (t a = +25 c) m pc8128tb v cc = v out = 3.0 v, i cc = 2.8 ma frequency s 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100.0000 .859 C14.5 1.089 C176.0 .001 176.7 1.005 C1.7 200.0000 .769 C23.8 1.138 C173.2 .001 142.6 1.019 C4.2 300.0000 .694 C27.1 1.208 C171.0 .003 112.3 1.015 C5.8 400.0000 .637 C30.1 1.336 C171.7 .005 88.8 .996 C8.7 500.0000 .595 C32.4 1.478 C172.8 .005 77.7 .976 C10.9 600.0000 .568 C35.9 1.623 C175.6 .005 64.1 .976 C12.8 700.0000 .555 C40.7 1.822 C179.0 .006 73.7 .983 C14.1 800.0000 .569 C45.0 1.955 176.9 .007 64.2 .988 C15.5 900.0000 .597 C49.4 2.147 172.5 .007 72.5 .973 C17.4 1000.0000 .633 C52.6 2.307 166.8 .008 49.9 .945 C19.9 1100.0000 .643 C56.3 2.468 160.6 .008 66.8 .928 C22.0 1200.0000 .644 C59.7 2.572 153.6 .007 48.8 .934 C24.1 1300.0000 .611 C64.3 2.677 144.2 .007 45.3 .950 C24.8 1400.0000 .585 C69.5 2.704 137.3 .005 64.5 .938 C26.6 1500.0000 .562 C75.1 2.693 128.8 .005 66.0 .913 C28.2 1600.0000 .559 C80.5 2.712 122.7 .005 93.6 .898 C30.1 1700.0000 .547 C85.4 2.640 116.3 .006 83.5 .892 C32.0 1800.0000 .540 C89.5 2.665 110.4 .005 101.6 .893 C33.6 1900.0000 .524 C93.2 2.599 104.5 .005 115.4 .896 C34.7 2000.0000 .503 C97.8 2.582 98.5 .006 110.9 .895 C36.5 2100.0000 .474 C103.5 2.500 93.1 .007 129.4 .877 C38.6 2200.0000 .461 C110.0 2.472 86.7 .008 130.5 .873 C40.4 2300.0000 .465 C116.2 2.453 80.9 .009 137.8 .878 C41.9 2400.0000 .475 C121.0 2.426 74.8 .010 133.3 .877 C43.5 2500.0000 .488 C123.1 2.364 70.4 .012 139.0 .871 C45.4 2600.0000 .491 C125.0 2.310 63.9 .011 140.8 .864 C47.9 2700.0000 .480 C125.1 2.282 61.1 .014 142.6 .855 C51.1 2800.0000 .460 C127.0 2.159 56.3 .014 140.7 .851 C53.0 2900.0000 .437 C129.4 2.205 51.4 .016 141.5 .867 C55.1 3000.0000 .410 C133.4 2.085 48.8 .018 143.2 .861 C57.0 3100.0000 .401 C137.8 2.038 42.4 .019 142.1 .855 C60.0
31 application note P13914EJ1V0AN00 m pc8151tb v cc = v out = 3.0 v, i cc = 4.2 ma frequency s 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100.0000 .843 C16.0 1.202 C178.9 .000 69.5 .996 C3.3 200.0000 .752 C27.1 1.197 C177.5 .003 120.2 1.009 C6.9 300.0000 .666 C32.4 1.221 C175.4 .003 103.2 .998 C9.9 400.0000 .603 C36.8 1.299 C174.5 .004 92.8 .986 C13.8 500.0000 .555 C40.5 1.398 C174.0 .005 88.8 .968 C17.3 600.0000 .528 C44.8 1.513 C174.9 .005 95.2 .968 C20.4 700.0000 .517 C49.9 1.691 C176.2 .007 67.5 .971 C23.1 800.0000 .525 C54.4 1.815 C178.2 .007 72.4 .972 C25.8 900.0000 .545 C58.9 2.008 179.5 .006 84.5 .960 C29.3 1000.0000 .571 C62.8 2.189 175.7 .009 78.3 .936 C32.8 1100.0000 .580 C67.3 2.399 171.2 .007 60.0 .926 C36.3 1200.0000 .588 C71.3 2.560 165.9 .007 89.5 .933 C39.5 1300.0000 .571 C76.4 2.736 157.5 .008 67.2 .941 C42.0 1400.0000 .563 C82.3 2.865 151.3 .008 79.6 .930 C45.0 1500.0000 .553 C88.8 2.946 143.3 .006 79.9 .906 C48.1 1600.0000 .552 C95.2 3.077 137.0 .006 91.4 .895 C51.5 1700.0000 .551 C101.5 3.083 130.1 .009 102.3 .888 C54.8 1800.0000 .550 C107.5 3.174 123.9 .009 100.5 .884 C57.3 1900.0000 .536 C113.3 3.164 117.4 .006 109.5 .885 C60.2 2000.0000 .517 C119.8 3.193 110.7 .009 115.9 .881 C63.4 2100.0000 .495 C127.1 3.149 104.4 .010 124.2 .870 C66.6 2200.0000 .484 C135.3 3.143 97.3 .011 122.4 .867 C69.8 2300.0000 .484 C142.6 3.135 90.5 .012 131.7 .866 C72.3 2400.0000 .490 C148.5 3.120 83.5 .015 138.1 .868 C75.5 2500.0000 .499 C152.5 3.053 78.4 .016 136.3 .866 C78.7 2600.0000 .499 C155.8 2.991 71.4 .018 142.9 .864 C82.5 2700.0000 .485 C157.4 2.958 68.0 .018 143.9 .858 C86.6 2800.0000 .464 C160.6 2.810 62.9 .021 142.5 .852 C89.7 2900.0000 .439 C164.1 2.866 57.5 .022 149.3 .872 C93.4 3000.0000 .416 C168.6 2.713 54.5 .025 148.4 .864 C96.6 3100.0000 .403 C173.6 2.635 48.0 .030 143.6 .867 C101.0
32 application note P13914EJ1V0AN00 m pc8152tb v cc = v out = 3.0 v, i cc = 5.6 ma frequency s 11 s 21 s 12 s 22 mhz mag ang mag ang mag ang mag ang 100.0000 .062 168.0 6.691 C0.3 .002 40.8 .775 C3.3 200.0000 .047 169.1 7.049 C3.7 .001 101.6 .773 C6.6 300.0000 .055 166.9 7.418 C9.3 .003 97.3 .761 C9.1 400.0000 .078 162.1 7.883 C16.0 .003 70.7 .759 C12.0 500.0000 .101 155.6 8.311 C22.1 .005 76.7 .754 C15.3 600.0000 .121 147.4 8.583 C29.7 .004 80.5 .754 C18.3 700.0000 .135 141.2 9.093 C37.3 .006 79.8 .756 C21.3 800.0000 .143 133.2 9.276 C45.4 .005 85.9 .755 C24.7 900.0000 .146 122.4 9.572 C53.6 .009 89.6 .752 C28.1 1000.0000 .146 108.9 9.763 C62.6 .009 70.3 .745 C32.0 1100.0000 .153 97.4 9.851 C71.9 .007 90.8 .733 C36.3 1200.0000 .157 82.7 9.926 C80.5 .011 84.9 .723 C40.3 1300.0000 .164 73.3 9.816 C91.2 .010 81.9 .710 C44.3 1400.0000 .168 63.4 9.586 C99.6 .011 81.4 .679 C48.5 1500.0000 .171 56.1 9.332 C109.4 .011 82.3 .649 C52.0 1600.0000 .165 47.2 9.128 C117.9 .009 79.0 .624 C56.3 1700.0000 .164 38.7 8.544 C126.1 .011 77.5 .591 C59.2 1800.0000 .156 30.2 8.152 C133.5 .011 76.8 .557 C61.4 1900.0000 .158 25.1 7.607 C140.6 .011 75.9 .527 C63.4 2000.0000 .148 21.5 7.264 C147.5 .012 75.8 .498 C65.6 2100.0000 .140 19.1 6.759 C153.7 .013 82.6 .476 C66.8 2200.0000 .124 21.6 6.366 C159.7 .012 92.4 .455 C67.1 2300.0000 .104 19.3 6.028 C165.7 .014 88.9 .438 C68.1 2400.0000 .085 17.8 5.642 C171.5 .015 89.8 .418 C68.1 2500.0000 .068 10.9 5.200 C176.0 .015 87.2 .399 C69.5 2600.0000 .059 9.9 4.874 179.1 .016 94.2 .390 C69.2 2700.0000 .055 C0.1 4.527 175.9 .017 93.5 .380 C70.2 2800.0000 .054 0.2 4.202 171.3 .022 88.2 .372 C70.3 2900.0000 .054 1.9 4.005 167.7 .021 91.4 .369 C69.5 3000.0000 .055 12.0 3.697 164.4 .021 86.8 .360 C69.6 3100.0000 .057 22.3 3.502 160.4 .023 83.9 .352 C71.0
33 application note P13914EJ1V0AN00 [memo]
34 application note P13914EJ1V0AN00 [memo]
although nec has taken all possible steps to ensure that the documentation supplied to our customers is complete, bug free and up-to-date, we readily accept that errors may occur. despite all the care and precautions we've taken, you may encounter problems in the documentation. please complete this form whenever you'd like to report errors or suggest improvements to us. hong kong, philippines, oceania nec electronics hong kong ltd. fax: +852-2886-9022/9044 korea nec electronics hong kong ltd. seoul branch fax: 02-528-4411 taiwan nec electronics taiwan ltd. fax: 02-2719-5951 address north america nec electronics inc. corporate communications dept. fax: 1-800-729-9288 1-408-588-6130 europe nec electronics (europe) gmbh technical documentation dept. fax: +49-211-6503-274 south america nec do brasil s.a. fax: +55-11-6465-6829 asian nations except philippines nec electronics singapore pte. ltd. fax: +65-250-3583 japan nec semiconductor technical hotline fax: 044-548-7900 i would like to report the following error/make the following suggestion: document title: document number: page number: thank you for your kind support. if possible, please fax the referenced page or drawing. excellent good acceptable poor document rating clarity technical accuracy organization cs 99.1 name company from: tel. fax facsimile message

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