bc 856w ... bc 860w 1 sep-28-1999 pnp silicon af transistors ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? low noise between 30 hz and 15 khz ? complementary types: bc 846w, bc 847w, bc 848w bc 849w, bc 850w (npn) 1 3 vso05561 2 type marking pin configuration package bc 856aw bc 856bw bc 857aw bc 857bw bc 857cw bc 858aw bc 858bw bc 858cw bc 859aw bc 859bw bc 859cw bc 860bw bc 860cw 3as 3bs 3es 3fs 3gs 3js 3ks 3ls 4as 4bs 4cs 4fs 4gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 sot-323
bc 856w ... bc 860w 2 sep-28-1999 maximum ratings parameter bc 856w bc 857w bc 860w symbol bc 858w bc 859w unit collector-emitter voltage 30 45 v v ceo 65 50 collector-base voltage 30 v cbo 80 collector-emitter voltage 50 30 80 v ces v 5 5 v v ebo emitter-base voltage 5 dc collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 peak emitter current 200 i em total power dissipation , t s = 124 c p tot 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 240 k/w junction - soldering point r thjs 105 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bc856w bc857/860w bc858/859w v (br)ceo 65 45 30 - - - - - - v collector-base breakdown voltage i c = 10 a, i b = 0 bc 856w bc 857/860w bc 858/859w v (br)cbo 80 50 30 - - - - - - 1) package mounted on pcb 40mm x 40mm x 1.5mm / 1cm 2 cu
bc 856w ... bc 860w 3 sep-28-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 a, v be = 0 bc 856w bc 857/860w bc 858/859w v (br)ces 80 50 30 - - - - - - v emitter-base breakdown voltage i e = 1 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 30 v, i e = 0 i cbo - - 15 na collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c i cbo - - 5 a dc current gain 1) i c = 10 a, v ce = 5 v h fe -group a h fe -group b h fe -group c h fe - - - 140 250 480 - - - - dc current gain 1) i c = 2 ma, v ce = 5 v h fe -group a h fe -group b h fe -group c h fe 125 220 420 180 290 520 250 475 800 - collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat - - 75 250 300 650 mv base-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 850 - - base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 600 - 650 - 750 820 1) pulse test: t 300 s, d = 2%
bc 856w ... bc 860w 4 sep-28-1999 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit typ. max. min. ac characteristics f t - mhz transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz - 250 pf collector-base capacitance v cb = 10 v, f = 1 mhz 3 5 - c cb 15 10 - c eb emitter-base capacitance v eb = 0.5 v, f = 1 mhz 2.7 4.5 8.7 - - - h 11e h fe -gr. a h fe -gr. b h fe -gr. c short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz k ? - - - - - - open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 12e h fe -gr. a h fe -gr. b h fe -gr. c 1.5 2 3 - - - 10 -4 h 21e - - - h fe -gr. a h fe -gr. b h fe -gr. c short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz 200 330 600 - - - - h fe -gr. a h fe -gr. b h fe -gr. c h 22e open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz 18 30 60 - - - s - - - db noise figure i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 1 khz, ? f = 200 hz f bc 856w bc 857w bc 858w - 10 - noise figure i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 1 khz, ? f = 200 hz 4 4 bc 859w bc 860w - - 1 1 f equivalent noise voltage i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 10 ... 50 hz bc 860w v n - - 0.11 v
bc 856w ... bc 860w 5 sep-28-1999 collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 0 4 10 5 10 10 ehp00376 v cb0 c eb0 v 6 2 eb0 v ebo c 8 10 pf 12 cb0 c -1 0 1 c cbo ( ( ) bc 856...860 ) total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s t a permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00377 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 ehp00378 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c
bc 856w ... bc 860w 6 sep-28-1999 collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 20 10 0 ehp00380 v cesat 10 ma 10 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c c dc current gain h fe = f ( i c ) v ce = 5v 10 10 10 10 ehp00382 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c base-emitter saturation voltage i c = f (v besat ), h fe = 20 0 10 ehp00379 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c
bc 856w ... bc 860w 7 sep-28-1999 h parameter h e = f ( i c ) normalized v ce = 5v 10 10 10 bc 856...860 ehp00383 ma -1 0 1 5 e h 2 10 -1 10 1 10 10 0 5 5 5 h 11e h 12e h 21e h 22e v ce = 5 v c h parameter h e = f ( v ce ) normalized i c = 2ma 0 0102030 bc 856...860 ehp00384 v ce h e v 1.0 0.5 1.5 2.0 = 2 ma h 11 12 h h 22 c noise figure f = f ( v ce ) i c = 0.2ma, r s = 2k ? , f = 1khz 0 10 10 10 10 bc 856...860 ehp00385 v ce f v 10 5 15 db 20 -1012 5 5 noise figure f = f ( f ) i c = 0.2ma, v ce = 5v, r s = 2k ? 10 10 10 10 bc 856...860 ehp00386 f khz db -2 -1 1 2 20 10 0 5 15 f 0 10
bc 856w ... bc 860w 8 sep-28-1999 noise figure f = f ( i c ) v ce = 5v, f = 1khz 10 10 10 10 bc 856...860 ehp00388 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ?? ? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 120hz 10 10 10 10 bc 856...860 ehp00387 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ? ?? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 10khz 10 10 10 10 bc 856...860 ehp00389 ma -3 -2 0 1 20 10 0 5 15 -1 10 db f c = 1 m r s ? ? 100 k ? 10 k 500 ? ? 1 k
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