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d a t a sh eet product speci?cation supersedes data of february 1994 1996 may 30 discrete semiconductors byv26 series fast soft-recovery controlled avalanche rectifiers handbook, 2 columns m3d116
1996 may 30 2 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series features glass passivated high maximum operating temperature low leakage current excellent stability guaranteed avalanche energy absorption capability available in ammo-pack. description rugged glass sod57 package, using a high temperature alloyed construction. this package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. fig.1 simplified outline (sod57) and symbol. 2/3 page (datasheet) mam047 ka limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v rrm repetitive peak reverse voltage byv26a - 200 v byv26b - 400 v byv26c - 600 v byv26d - 800 v byv26e - 1000 v byv26f - 1200 v byv26g - 1400 v v r continuous reverse voltage byv26a - 200 v byv26b - 400 v byv26c - 600 v byv26d - 800 v byv26e - 1000 v byv26f - 1200 v byv26g - 1400 v i f(av) average forward current t tp =85 c; lead length = 10 mm; see figs 2 and 3; averaged over any 20 ms period; see also figs 10 and 11 byv26a to e - 1.00 a byv26f and g - 1.05 a i f(av) average forward current t amb =60 c; pcb mounting (see fig.19); see figs 4 and 5; averaged over any 20 ms period; see also figs 10 and 11 byv26a to e - 0.65 a byv26f and g - 0.68 a i frm repetitive peak forward current t tp =85 c; see figs 6 and 7 byv26a to e - 10.0 a byv26f and g - 9.6 a
1996 may 30 3 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series electrical characteristics t j =25 c unless otherwise speci?ed. i frm repetitive peak forward current t amb =60 c; see figs 8 and 9 byv26a to e - 6.0 a byv26f and g - 6.4 a i fsm non-repetitive peak forward current t = 10 ms half sine wave; t j =t j max prior to surge; v r =v rrmmax - 30 a e rsm non-repetitive peak reverse avalanche energy i r = 400 ma; t j =t j max prior to surge; inductive load switched off - 10 mj t stg storage temperature - 65 +175 c t j junction temperature see figs 12 and 13 - 65 +175 c symbol parameter conditions min. typ. max. unit v f forward voltage i f = 1 a; t j =t j max ; see figs 14 and 15 byv26a to e -- 1.3 v byv26f and g -- 1.3 v v f forward voltage i f =1a; see figs 14 and 15 byv26a to e -- 2.50 v byv26f and g -- 2.15 v v (br)r reverse avalanche breakdown voltage i r = 0.1 ma byv26a 300 -- v byv26b 500 -- v byv26c 700 -- v byv26d 900 -- v byv26e 1100 -- v byv26f 1300 -- v byv26g 1500 -- v i r reverse current v r =v rrmmax ; see fig.16 -- 5 m a v r =v rrmmax ; t j = 165 c; see fig.16 -- 150 m a t rr reverse recovery time when switched from i f = 0.5 a to i r =1a; measured at i r = 0.25 a; see fig.20 byv26a to c -- 30 ns byv26d and e -- 75 ns byv26f and g -- 150 ns c d diode capacitance f = 1 mhz; v r =0v; see figs 17 and 18 byv26a to c - 45 - pf byv26d and e - 40 - pf byv26f and g - 35 - pf symbol parameter conditions min. max. unit
1996 may 30 4 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series thermal characteristics note 1. device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of cu-layer 3 40 m m, see fig.19. for more information please refer to the general part of associated handbook . maximum slope of reverse recovery current when switched from i f = 1 a to v r 3 30 v and di f /dt = - 1a/ m s; see fig.21 byv26a to c -- 7a/ m s byv26d and e -- 6a/ m s byv26f and g -- 5a/ m s symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 k/w r th j-a thermal resistance from junction to ambient note 1 100 k/w symbol parameter conditions min. typ. max. unit di r dt --------
1996 may 30 5 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series graphical data handbook, halfpage 0 200 1 0 msa855 0.5 100 t tp ( c) o i f(av) (a) 20 15 10 lead length (mm) byv26a to e a = 1.42; v r =v rrmmax ; d = 0.5. switched mode application. fig.2 maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). byv26f and g a = 1.42; v r =v rrmmax ; d = 0.5. switched mode application. fig.3 maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 200 2 0 mlb533 1 100 t tp ( c) o i f(av) (a) lead length 10 mm handbook, halfpage 0 200 1 0 msa856 0.5 100 t ( c) o i f(av) (a) amb byv26a to e a = 1.42; v r =v rrmmax ; d = 0.5. device mounted as shown in fig.19. switched mode application. fig.4 maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). fig.5 maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). byv26f and g a = 1.42; v r =v rrmmax ; d = 0.5. device mounted as shown in fig.19. switched mode application. handbook, halfpage 0 200 1 0 mlb534 0.5 100 t ( c) o i f(av) (a) amb
1996 may 30 6 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series 12 0 4 10 2 10 1 11010 2 10 3 10 4 msa860 8 10 2 6 t (ms) p i frm (a) = 0.05 d 0.1 0.2 0.5 1 byv26a to e. t tp =85 c; r th j-tp = 46 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 1000 v. fig.6 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. byv26f and g. t tp =85 c; r th j-tp = 46 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 1400 v. fig.7 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 0 4 10 2 11010 2 10 3 10 4 mlb535 8 t (ms) p 10 1 i frm (a) 2 6 10 = 0.05 d 0.1 0.2 0.5 1
1996 may 30 7 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series 6 0 2 10 2 10 1 11010 2 10 3 10 4 msa859 4 5 1 3 t (ms) p i frm (a) = 0.05 d 0.1 0.2 0.5 1 byv26a to e t amb =60 c; r th j-a = 100 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 1000 v. fig.8 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. byv26f and g t amb =60 c; r th j-a = 100 k/w. v rrmmax during 1 -d ; curves include derating for t j max at v rrm = 1400 v. fig.9 maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 0 4 10 2 11010 2 10 3 10 4 mlb536 8 t (ms) p 10 1 i frm (a) 2 6 = 0.05 d 0.1 0.2 0.5 1
1996 may 30 8 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series 01 2 0 1 p (w) msa854 0.5 i f(av) (a) 2 1.57 1.42 3 a = 3 2.5 byv26a to e a=i f(rms) /i f(av) ; v r =v rrmmax ; d = 0.5. fig.10 maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. byv26f and g a=i f(rms) /i f(av) ; v r =v rrmmax ; d = 0.5. fig.11 maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 01 2 0 1 p (w) mlb532 0.5 i f(av) (a) 3 1.42 a = 3 2.5 2 1.57 byv26a to e solid line = v r . dotted line = v rrm ; d = 0.5. fig.12 maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage 200 0 400 1200 0 msa857 800 100 v (v) r t j ( c) o abcde byv26f and g solid line = v r . dotted line = v rrm ; d = 0.5. fig.13 maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage 200 0 2000 0 mlb599 1000 100 v (v) r t j ( c) o fg
1996 may 30 9 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series byv26a to e dotted line: t j = 175 c. solid line: t j =25 c. fig.14 forward current as a function of forward voltage; maximum values. handbook, halfpage 024 8 8 (a) i f 6 2 0 4 msa853 6 v f (v) byv26f and g dotted line: t j = 175 c. solid line: t j =25 c. fig.15 forward current as a function of forward voltage; maximum values. handbook, halfpage 02 6 8 (a) i f 6 2 0 4 mbd427 4 v f (v) fig.16 reverse current as a function of junction temperature; maximum values. handbook, halfpage mgc550 0 100 200 10 3 10 2 10 1 ( m a) i r t j ( c) v r =v rrmmax . byv26a to e f = 1 mhz; t j =25 c. fig.17 diode capacitance as a function of reverse voltage, typical values. handbook, halfpage 1 msa858 10 10 2 10 3 1 10 2 10 v (v) r c d (pf) byv26a,b,c byv26d,e
1996 may 30 10 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series handbook, halfpage 1 mbd437 10 10 2 10 4 1 10 2 10 v (v) r c d (pf) 10 3 byv26f and g f = 1 mhz; t j =25 c. fig.18 diode capacitance as a function of reverse voltage, typical values. fig.19 device mounted on a printed-circuit board. dimensions in mm. handbook, halfpage mga200 3 2 7 50 25 50 handbook, full pagewidth 10 w 1 w 50 w 25 v dut mam057 + t rr 0.5 0 0.5 1 i f (a) i r (a) t 0.25 fig.20 test circuit and reverse recovery time waveform and definition. input impedance oscilloscope: 1 m w , 22 pf; t r 7 ns. source impedance: 50 w ; t r 15 ns.
1996 may 30 11 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series fig.21 reverse recovery definitions. n dbook, halfpage 10% 100% di dt t t rr i f i r mgc499 f di dt r
1996 may 30 12 philips semiconductors product speci?cation fast soft-recovery controlled avalanche recti?ers byv26 series package outline definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. fig.22 sod57. dimensions in mm. the marking band indicates the cathode. handbook, full pagewidth 3.81 max mbc880 ka 28 min 28 min 4.57 max 0.81 max

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