? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( chip capability ) 260 a i c110 t c = 110c 82 a i lrms t c = 25c (lead rms limit) 120 a i cm t c = 25c, 1ms 580 a ssoa v ge = 15v, t vj = 125c, r g = 2 i cm = 164 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25c 1250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque ( ixgk ) 1.13/10 nm/lb.in. f c mounting force ( ixgx ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ce = 0v 1200 v v ge(th) i c = 1ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a note 1, t j = 125c 2.5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 2 1.83 2.05 v t j = 125c 1.95 ds100164a(10/09) genx3 tm 1200v igbts IXGK82N120A3 ixgx82n120a3 v ces = 1200v i c110 = 82a v ce(sat) 2.05v ultra-low-vsat pt igbts for up to 3khz switching features z optimized for low conduction losses z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits preliminary technical information g = gate e = emitter c = collector tab = collector plus247 tm (ixgx) g c e tab to-264 (ixgk) e g c e tab
ixys reserves the right to change limits, test conditions, and dimensions. IXGK82N120A3 ixgx82n120a3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 2 40 66 s c ies 7700 pf c oes v ce = 25v, v ge = 0v, f = 1 mhz 520 pf c res 190 pf q g(on) 340 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 54 nc q gc 146 nc t d(on) 34 ns t ri 75 ns e on 5.5 mj t d(off) 265 ns t fi 780 13 00 ns e off 12.5 20.0 mj t d(on) 32 ns t ri 77 ns e on 6.7 mj t d(off) 340 ns t fi 1250 ns e off 22.5 mj r thjc 0.10 c/w r thck 0.15 c/w inductive load, t j = 25c i c = 80a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 3 inductive load, t j = 125c i c = 80a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. part must be heatsunk for high-temp i ces measurement. 2. pulse test, t 300 s, duty cycle, d 2%. 3. switching times & energy losses may increase for higher v ce (clamp), t j or r g . to-264 aa ( ixgk) outline dim. millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) plus247 tm (ixgx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2009 ixys corporation, all rights reserved IXGK82N120A3 ixgx82n120a3 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 02468101214 v ce - volts i c - amperes v ge = 15v 13v 7v 9v 11v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 164a i c = 82a i c = 41a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 164 a t j = 25oc 41 a 82 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGK82N120A3 ixgx82n120a3 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 11. maximum transient thermal impedance 0.200 fig. 7. transconductance 0 20 40 60 80 100 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 q g - nanocoulombs v ge - volts v ce = 600v i c = 82a i g = 10ma fig. 9. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved ixys ref: g_82n120a3(8t)6-23-09 IXGK82N120A3 ixgx82n120a3 fig. 16. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 20 30 40 50 60 70 80 i c - amperes t r i - nanoseconds 24 26 28 30 32 34 36 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 25oc, 125oc fig. 17. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 110 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 24 26 28 30 32 34 36 38 40 42 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 12. inductive switching energy loss vs. collector current 0 5 10 15 20 25 30 20 30 40 50 60 70 80 i c - amperes e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 13. inductive switching energy loss vs. junction temperature 0 5 10 15 20 25 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 14. inductive turn-off switching times vs. collector current 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 30 40 50 60 70 80 i c - amperes t f i - microseconds 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t d ( off ) - microseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 15. inductive turn-off switching times vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - microseconds 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 t d ( off ) - microseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a, 80a
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