transistors with built-in resistor 1 publication date: january 2002 sjh00012bed unr2221/2222/2223/2224 (un2221/2222/2223/2224) silicon npn epitaxial planer transistor for digital circuits features ? costs can be reduced through downsizing of the equipment and reduction of the number of parts. ? mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. resistance by part number marking symbol (r 1 )(r 2 ) ? unr2221 (un2221) 9a 2.2 k ? 2.2 k ? ? unr2222 (un2222) 9b 4.7 k ? 4.7 k ? ? unr2223 (un2223) 9c 10 k ? 10 k ? ? unr2224 (un2224) 9d 2.2 k ? 10 k ? unit : mm electrical characteristics t a = 25 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 50 v, i e = 01 a i ceo v ce = 50 v, i b = 01 emitter unr2221 i ebo v eb = 6 v, i c = 05ma cutoff unr2222 2 current unr2223/2224 1 collector to base voltage v cbo i c = 10 a, i e = 050 v collector to emitter voltage v ceo i c = 2 ma, i b = 050v forward unr2221 h fe v ce = 10 v, i c = 100 ma 40 current unr2222 50 transfer ratio unr2223/2224 60 collector to emitter saturation voltage v ce(sat) i c = 100 ma, i b = 5 ma 0.25 v output voltage high level v oh v cc = 5 v, v b = 0.5 v, r l = 500 ? 4.9 v output voltage low level v ol v cc = 5 v, v b = 3.5 v, r l = 500 ? 0.2 v parameter symbol rating unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 50 v collector current i c 500 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c internal connection b r 1 r 2 c e 1: base 2: emitter 3: collector eiaj: sc-59 mini3-g1 package 0.40 +0.10 ?0.05 (0.65) 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 ?0.05 0.16 +0.10 ?0.06 0.4 0.2 5? 10? 0 to 0.1 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1 absolute maximum ratings t a = 25 c note) the part numbers in the parenthesis show conventional part number.
unr2221/2222/2223/2224 2 sjh00012bed electrical characteristics (continued) t a = 25 c p t ? t a parameter symbol conditions min typ max unit transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz input unr2221/2224 r 1 ? 30% 2.2 + 30% k ? resis- unr2222 4.7 tance unr2223 10 resistance ratio r 1 /r 2 0.8 1.0 1.2 unr2224 0.22 0 50 100 150 200 250 02040 80 60 140 120 100 160 ambient temperature t a ( c ) total power dissipation p t ( mw ) i c ? v ce v ce(sat) ? i c h fe ? i c i b = 1.0 ma 0.2ma 0.1ma 0.3ma 0.4 ma 0.5 ma 0.6 ma 0.7ma 0.8 ma 0.9 ma 0 012 210 48 6 300 250 200 150 100 50 collector to emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25?c 0.01 0.03 13 0.1 0.3 1 3 10 30 100 10 30 100 300 1 000 collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 13 100 200 300 400 10 30 100 300 1 000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10 v t a = 75 c 25 c ? 25 c common characteristics chart characteristics charts of unr2221
unr2221/2222/2223/2224 3 sjh00012bed c ob ? v cb i o ? v in v in ? i o characteristics charts of unr2222 i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 0 0.1 0.3 24 20 16 15 8 4 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f = 1 mhz i e = 0 t a = 25 c 0.4 1.4 1.2 1.0 0.8 0.6 1 3 10 30 100 300 1 000 3 000 10 000 output current i o ( a ) input voltage v in ( v ) v o = 5 v t a = 25 c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2 v t a = 25 c 0 012 210 48 6 300 250 200 150 100 50 collector to emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 ? c i b = 1.0 ma 0.2 ma 0.1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0.01 0.03 13 0.1 0.3 1 3 10 30 100 10 30 100 300 1 000 collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 13 50 100 150 200 10 30 100 300 1 000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10 v t a = 75 c 25 c ? 25 c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2 v t a = 25 c 0.4 1.4 1.2 1.0 0.8 0.6 1 3 10 30 100 300 1 000 3 000 10 000 output current i o ( a ) input voltage v in ( v ) v o = 5 v t a = 25 c 0 0.1 0.3 12 10 8 6 4 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f = 1 mhz i e = 0 t a = 25 c
unr2221/2222/2223/2224 4 sjh00012bed characteristics charts of unr2223 c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c characteristics charts of unr2224 i c ? v ce v ce(sat) ? i c h fe ? i c i b = 1.0 ma 0.2ma 0.1ma 0.3ma 0.4 ma 0.5 ma 0.6 ma 0.7ma 0.8 ma 0.9 ma 0 012 210 48 6 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 ? c 0.01 0.03 13 0.1 0.3 1 3 10 30 100 10 30 100 300 1 000 collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 13 50 100 150 200 10 30 100 300 1 000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10 v t a = 75 c 25 c ? 25 c 0 0.1 0.3 12 10 8 6 4 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f = 1 mhz i e = 0 t a = 25 c 0.4 1.4 1.2 1.0 0.8 0.6 1 3 10 30 100 300 1 000 3 000 10 000 output current i o ( a ) input voltage v in ( v ) v o = 5 v t a = 25 c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2 v t a = 25 c i b = 1.0 ma 0.2ma 0.1ma 0.3ma 0.4 ma 0.5 ma 0.6 ma 0.7ma 0.8 ma 0.9 ma 0 012 210 48 6 300 250 200 150 100 50 collector to emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 ? c 0.01 0.03 13 0.1 0.3 1 3 10 30 100 10 30 100 300 1 000 collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 13 50 100 150 200 10 30 100 300 1 000 forward current transfer ratio h fe collector current i c ( ma ) v ce = 10 v t a = 75 c 25 c ? 25 c
unr2221/2222/2223/2224 5 sjh00012bed c ob ? v cb i o ? v in v in ? i o 0 0.1 0.3 12 10 8 5 4 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f = 1 mhz i e = 0 t a = 25 c 0.4 1.4 1.2 1.0 0.8 0.6 1 3 10 30 100 300 1 000 3 000 10 000 output current i o ( a ) input voltage v in ( v ) v o = 5 v t a = 25 c 0.1 0.3 0.1 0.3 1 3 10 30 100 300 1 000 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o = 0.2 v t a = 25 c
please read the following notes before using the datasheets a. these materials are intended as a reference to assist customers with the selection of panasonic semiconductor products best suited to their applications. due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. b. panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. therefore, panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. c. these materials are solely intended for a customer's individual use. therefore, without the prior written approval of panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the internet or in any other way, is prohibited. request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese govern- ment if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative character- istics and applied circuit examples of the products. it does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) the products described in this material are intended to be used for standard applications or gen- eral electronic equipment (such as office equipment, communications equipment, measuring in- struments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (4) the products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. at the final stage of your design, purchas- ing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) when using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) no part of this material may be reprinted or reproduced by any means without written permission from our company. 2001 mar
|