any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft? control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel silicon mosfet dc/dc converter applications ordering number:enn6229 2sk3020 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 31000ts (koto) ta-2106 no.6229C1/4 6.5 2.3 0.5 1.5 5.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 12 4 3 package dimensions unit:mm 2083b [2sk3020] features low on resistance. 4v drive. 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp unit:mm 2092b [2sk3020] 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp-fa 5.0 6.5 0.85 0.7 0.6 1.5 5.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3
2sk3020 no.6229C2/4 specifications absolute maximum ratings at ta = 25?c ?c ?c electrical characteristics at ta = 25?c tc=25?c switching time test circuit pw 10 m s, duty cycle 1% 50 p.g 2sk3020 s g d v out v dd = 15v v in i d = 10 a r l = 1.5 pw = 10 s d.c. 1% v in 10v 0v r e t e m a r a pl o b m y ss n o i t i d n o cs g n i t a rt i n u e g a t l o v e c r u o s - o t - n i a r dv s s d 0 3v e g a t l o v e c r u o s - o t - e t a gv s s g 4 2 v ) c d ( t n e r r u c n i a r di d 5 1a ) e s l u p ( t n e r r u c n i a r di p d 5 4a n o i t a p i s s i d r e w o p e l b a w o l l ap d 0 . 1w 0 2w e r u t a r e p m e t l e n n a h ch c t 0 5 1 e r u t a r e p m e t e g a r o t sg t s t 0 5 1 + o t 5 5 C r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m e g a t l o v n w o d k a e r b e c r u o s - o t - n i a r dv s s d ) r b ( i d v , a m 1 = s g 0 =0 3v t n e r r u c n i a r d e g a t l o v e t a g - o r e zi s s d v s d v , v 0 3 = s g 0 =0 1a t n e r r u c e g a k a e l e c r u o s - o t - e t a gi s s g v s g v , v 6 1 = s d 0 =0 1 a e g a t l o v f f o t u cv ) f f o ( s g v s d i , v 0 1 = d a m 1 =0 . 14 . 2v e c n a t t i m d a r e f s n a r t d r a w r o f| s f y |v s d i , v 0 1 = d a 0 1 =0 14 1s e c n a t s i s e r e t a t s - n o e c r u o s - o t - n i a r d c i t a t s r ) n o ( s d 1i d v , a 7 = s g v 0 1 =5 22 3m w r ) n o ( s d 2i d v , a 4 = s g v 4 =8 47 6m w e c n a t i c a p a c t u p n is s i cv s d z h m 1 = f , v 0 1 =0 4 6f p e c n a t i c a p a c t u p t u os s o cv s d z h m 1 = f , v 0 1 =0 8 3f p e c n a t i c a p a c r e f s n a r t e s r e v e rs s r cv s d z h m 1 = f , v 0 1 =0 8 1f p e m i t y a l e d n o - n r u tt ) n o ( d t i u c r i c t s e t d e i f i c e p s e e s5 1s n e m i t e s i rt r t i u c r i c t s e t d e i f i c e p s e e s0 8 2s n e m i t y a l e d f f o - n r u tt ) f f o ( d t i u c r i c t s e t d e i f i c e p s e e s0 6s n e m i t l l a ft f t i u c r i c t s e t d e i f i c e p s e e s0 9s n e g r a h c e t a g l a t o tg qv s d v , v 0 1 = s g i , v 0 1 = d a 5 1 =1 2c n e g r a h c e c r u o s - o t - e t a gs g qv s d v , v 0 1 = s g i , v 0 1 = d a 5 1 =5c n e g r a h c " r e l l i m " n i a r d - o t - e t a gd g qv s d v , v 0 1 = s g i , v 0 1 = d a 5 1 =5c n e g a t l o v d r a w r o f e d o i dv d s i s v , a 5 1 = s g 0 =9 . 02 1v
2sk3020 no.6229C3/4 i d - v ds i d - v gs r ds(on) - v gs tc=25 c v ds =10v v ds =10v 23 57 23 57 23 23 57 3.0v v gs =2.5v 10.0v 4.0v 8.0v 6.0v - 25 c 25 c tc=75 c 4a i d =7a 2 3 5 7 2 3 2 3 5 7 3.5v tc= - 25 c 25 c 75 c 9 8 7 6 5 1 0 0 3 2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 4 0 0 3 7 10 1 5 9 2 6 4 8 0.5 1.0 2.0 2.5 1.5 3.0 3.5 4.0 0.01 0.1 1.0 10 0.1 1.0 10 20 2 0 4 6 8 10 12 14 16 18 1 3 5 7 9 11 13 15 17 19 20 0 40 60 100 80 90 10 30 50 70 drain current, i d ? drain-to-source voltage, v ds ? drain current, i d ? gate-to-source voltage, v gs ? forward transfer admittance, | y fs | s drain current, i d a gate-to-source voltage, v gs ? static drain-to-source on-state resistance, r ds (on) ? w | y fs | - i d ciss,coss,crss - v ds v gs - qg f = 1mhz ciss coss crss 2 3 5 7 2 3 5 7 2 3 5 7 v ds =10v i d =15a 100 10 1000 10000 10 5 0 15202530 10 20 25 515 0 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - tc v gs =0 2 3 5 7 2 3 5 7 2 2 3 5 7 i f - v sd i d =7a, v gs =10v i d =4a, v gs =4v tc= - 25 c 25 c 75 c 20 0 40 020 - 20 - 40 - 60 40 60 80 100 120 140 100 60 70 80 90 10 30 50 0.01 0.1 1.0 10 0 0.2 0.1 0.3 0.4 0.5 0.7 0.8 0.6 0.9 1.0 ciss, coss, crss pf gate-to-source voltage, v gs v drain-to-source voltage, v ds ? total gate charge, qg nc forward current, i f ? static drain-to-source on-state resistance, r ds (on) ? w diode forward voltage, v sd ? case temperature, tc ?c
specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2000. specifications and information herein are subject to change without notice. 2sk3020 ps no.6229C4/4 sw time - i d a s o p d - ta p d - tc v dd =15v v gs =10v i dp =45a operation in this area is limited by r ds (on). 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 23 5 5 72357 23 57 23 2 3 5 2 3 5 7 723572 2 357 100 s 10 s 10ms 1ms i d =15a no heat sink t r t d (off) t f dc operation 1.0 0.1 10 100 10 20 60 40 80 120 100 140 160 0 0 0.2 0.4 0.6 0.8 1.0 1.2 20 60 40 80 120 100 140 160 0 0 10 5 15 20 25 0.1 0.01 1.0 100 0.1 1.0 10 0.01 10 switching time, sw time ns drain current, i d ? drain current ,i d ? drain-to-source voltage, v ds ? allowable power dissipation, p d ? ambient temperature, ta ?c tc=25 c single pulse allowable power dissipation, p d ? case temperature, tc ?c
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