bcr 198w oct-19-1999 1 pnp silicon digital transistor switching circuit, inverter, interface circuit, driver circuit built in bias resistor ( r 1 =47k , r 2 =47k ) 1 3 vso05561 2 eha07183 3 2 1 c e b r 1 r 2 type marking pin configuration package bcr 198w wrs 1 = b 2 = e 3 = c sot-323 maximum ratings parameter symbol value unit collector-emitter voltage v ceo v 50 50 v cbo collector-base voltage emitter-base voltage 10 v ebo input on voltage v i(on) 50 70 ma i c dc collector current total power dissipation , t s = 124 c p tot mw 250 junction temperature t j 150 c -65 ... 150 storage temperature t st g thermal resistance junction ambient 1) 240 k/w r thja junction - soldering point r thjs 105 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bcr 198w oct-19-1999 2 electrical characteristics at t a =25c, unless otherwise specified parameter values symbol unit typ. max. min. dc characteristics - v 50 - v (br)ceo collector-emitter breakdown voltage i c = 100 a, i b = 0 50 - v (br)cbo collector-base breakdown voltage i c = 10 a, i b = 0 - - collector cutoff current v cb = 40 v, i e = 0 i cbo - 100 na - - a emitter cutoff current v eb = 10 v, i c = 0 i ebo 164 70 - - - dc current gain 1) i c = 5 ma, v ce = 5 v h fe - v cesat - 0.3 v collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma 0.8 input off voltage i c = 100 a, v ce = 5 v v i(off) - 1.5 v 1 - input on voltage i c = 2 ma, v ce = 0.3 v v i(on) v 3 32 47 k input resistor r 1 62 0.9 r 1 / r 2 1 1.1 resistor ratio - ac characteristics f t - - mhz 190 transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz c cb - 3 pf collector-base capacitance v cb = 10 v, f = 1 mhz - 1) pulse test: t < 300 s; d < 2%
bcr 198w oct-19-1999 3 dc current gain h fe = f (i c ) v ce = 5v (common emitter configuration) 10 -1 10 0 10 1 10 2 ma i c 0 10 1 10 2 10 3 10 - h fe collector-emitter saturation voltage v cesat = f ( i c ), h fe = 20 0.0 0.2 0.4 0.6 v 1.0 v cesat 0 10 1 10 2 10 ma i c input on voltage v i(on) = f ( i c ) v ce = 0.3v (common emitter configuration) 10 -1 10 0 10 1 10 2 v v i(on) -1 10 0 10 1 10 2 10 ma i c input off voltage v i(off) = f ( i c ) v ce = 5v (common emitter configuration) 0 1 2 3 v 5 v i(off) -3 10 -2 10 -1 10 0 10 1 10 ma i c
bcr 198w oct-19-1999 4 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s t a permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0
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