hd74hc640/hd74hc643 octal bus transceivers (with 3-state outputs) ade-205-517 (z) 1st. edition sep. 2000 description each device has an active enable g and a direction control input, dir. when dir is high, data flows from the a inputs to the b outputs. when dir is low, data flows from the b inputs to the a outputs. the hd74hc640 transfers inverted data from one bus to other and the hd74hc643 transfers inverted data from the a bus to the b bus and true data from the b bus to the a bus. features high speed operation: t pd = 12 ns typ (c l = 50 pf) high output current: fanout of 15 lsttl loads wide operating voltage: v cc = 2 to 6 v low input current: 1 ? max low quiescent supply current: i cc (static) = 4 ? max (ta = 25?) function table control inputs operation g dir hd74hc640 hd74hc643 ll b data to a bus b data to a bus lh a data to b bus a data to b bus h x isolation isolation
hd74hc640/hd74hc643 2 pin arrangement hd74hc640 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 dir v cc b 1 b 2 b 3 b 4 b 5 b 6 b 7 b 8 enable g a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 gnd (top view)
hd74hc640/hd74hc643 3 hd74hc643 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 dir v cc b 1 b 2 b 3 b 4 b 5 b 6 b 7 b 8 enable g a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 gnd (top view) absolute maximum ratings item symbol rating unit supply voltage range v cc ?.5 to +7.0 v input voltage v in ?.5 to v cc + 0.5 v output voltage v out ?.5 to v cc + 0.5 v output current i out 35 ma dc current drain per v cc , gnd i cc , i gnd 75 ma dc input diode current i ik 20 ma dc output diode current i ok 20 ma power dissipation per package p t 500 mw storage temperature tstg ?5 to +150 c
hd74hc640/hd74hc643 4 block diagram hd74hc640 g dir a v cc v cc b to 7 other inverters to 7 other inverters
hd74hc640/hd74hc643 5 hd74hc643 g dir a v cc v cc b to 7 other inverters to 7 other inverters
hd74hc640/hd74hc643 6 dc characteristics ta = 25 c ta = ?0 to +85 c item symbol v cc (v) min typ max min max unit test conditions input voltage v ih 2.0 1.5 1.5 v 4.5 3.15 3.15 6.0 4.2 4.2 v il 2.0 0.3 0.3 v 4.5 1.35 1.35 6.0 1.8 1.8 hysteresis voltage v h 2.0 0.1 v 4.5 0.4 6.0 0.4 output voltage v oh 2.0 1.9 2.0 1.9 v vin = v ih or v il i oh = ?0 m a 4.5 4.4 4.5 4.4 6.0 5.9 6.0 5.9 4.5 4.18 4.13 i oh = ? ma 6.0 5.68 5.63 i oh = ?.8 ma v ol 2.0 0.0 0.1 0.1 v vin = v ih or v il i ol = 20 m a 4.5 0.0 0.1 0.1 6.0 0.0 0.1 0.1 4.5 0.26 0.33 i ol = 6 ma 6.0 0.26 0.33 i ol = 7.8 ma off-state output current i oz 6.0 0.5 5.0 m a vin = v ih or v il , vout = v cc or gnd input current iin 6.0 0.1 1.0 m a vin = v cc or gnd quiescent supply current i cc 6.0 4.0 40 m a vin = v cc or gnd, iout = 0 m a
hd74hc640/hd74hc643 7 ac characteristics (c l = 50 pf, input t r = t f = 6 ns) ta = 25 c ta = ?0 to +85 c item symbol v cc (v) min typ max min max unit test conditions propagation delay t plh 2.0 90 115 ns time t phl 4.5 12 18 23 6.0 15 20 output enable t zh 2.0 230 290 ns time t zl 4.5 15 46 58 6.0 39 49 output disable t hz 2.0 215 270 ns time t lz 4.5 17 43 54 6.0 37 46 output rise/fall t tlh 2.0 60 75 ns time t thl 4.5 4 12 15 6.0 10 13 input capacitance cin 5 10 10 pf
hd74hc640/hd74hc643 8 package dimensions hitachi code jedec eiaj mass (reference value) dp-20n conforms 1.26 g unit: mm 0.51 min 2.54 min 5.08 max 7.62 0.25 + 0.11 ?0.05 2.54 0.25 0.48 0.10 24.50 25.40 max 0.89 1.30 6.30 7.00 max 1 10 11 20 0 ?15 1.27 max hitachi code jedec eiaj mass (reference value) fp-20da conforms 0.31 g unit: mm *dimension including the plating thickness base material dimension *0.42 0.08 0.12 0.15 m 20 10 1 *0.22 0.05 0.80 max 11 12.6 5.5 2.20 max 13 max 0 ?8 0.70 0.20 + 0.20 ?0.30 7.80 1.27 0.10 0.10 1.15 0.40 0.06 0.20 0.04
hd74hc640/hd74hc643 9 hitachi code jedec eiaj mass (reference value) fp-20db conforms 0.52 g unit: mm *dimension including the plating thickness base material dimension 0.12 0.15 0 ?8 m 20 11 0.20 0.10 1 1.27 10 12.8 13.2 max 7.50 2.65 max *0.27 0.05 *0.42 0.08 + 0.57 ?0.30 0.70 + 0.25 ?0.40 10.40 1.45 0.935 max 0.40 0.06 0.25 0.04 hitachi code jedec eiaj mass (reference value) ttp-20da 0.07 g unit: mm *dimension including the plating thickness base material dimension 0.50 0.10 0 ?8 *0.17 0.05 6.40 0.20 0.10 1.10 max 0.13 m 0.65 110 20 11 4.40 6.50 6.80 max *0.22 +0.08 ?.07 0.07 +0.03 ?.04 1.0 0.65 max 0.20 0.06 0.15 0.04
hd74hc640/hd74hc643 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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