1 power transistors 2sD1257, 2sD1257a silicon npn epitaxial planar type for power switching complementary to 2sb934 n features l low collector to emitter saturation voltage v ce(sat) l satisfactory linearity of foward current transfer ratio h fe l large collector current i c l n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 130 150 80 100 7 15 7 40 1.3 150 C55 to +150 unit v v v a a w ?c ?c 2sD1257 2sD1257a 2sD1257 2sD1257a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t t on t stg t f conditions v cb = 100v, i e = 0 v eb = 5v, i c = 0 i c = 10ma, i b = 0 v ce = 2v, i c = 0.1a v ce = 2v, i c = 3a i c = 5a, i b = 0.25a i c = 5a, i b = 0.25a v ce = 10v, i c = 0.5a, f = 10mhz i c = 3a, i b1 = 0.3a, i b2 = C 0.3a, v cc = 50v min 80 100 45 60 typ 30 0.5 1.5 0.1 max 10 50 260 0.5 1.5 unit m a m a v v v mhz m s m s m s 2sD1257 2sD1257a * h fe2 rank classification rank r q p h fe2 60 to 120 90 to 180 130 to 260 unit: mm 1:base 2:collector 3:emitter n type package 8.5 0.2 6.0 0.5 10.0 0.3 10.5min. 2.0 1.5 0.1 1.5max. 0.8 0.1 5.08 0.5 2.54 0.3 1.1max. 0.5max. 1.0 0.1 3.4 0.3 2 13 unit: mm 8.5 0.2 4.4 0.5 2.0 10.0 0.3 14.7 0.5 4.4 0.5 6.0 0.3 3.4 0.3 2.54 0.3 5.08 0.5 1.0 0.1 0.8 0.1 1.5 +0 ?.4 3.0 +0.4 ?.2 0 to 0.4 1.1 max. r0.5 r0.5 123 1:base 2:collector 3:emitter n type package (ds)
2 power transistors 2sD1257, 2sD1257a p c ta i c v ce v ce(sat) i c v ce(sat) i c v be(sat) i c v be(sat) i c h fe i c f t i c c ob v cb 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 50 50 2mm al heat sink (3) without heat sink (p c =1.3w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 10 8 6 4 2 t c =25?c i b =55ma 50ma 40ma 45ma 20ma 30ma 35ma 10ma 15ma 5ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =20 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 3 1 0.1 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 (1) i c /i b =10 (2) i c /i b =20 t c =25?c (1) (2) collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 30 10 1 0.3 3 0.01 0.03 0.1 0.3 1 3 10 (1) i c /i b =10 (2) i c /i b =20 t c =25?c (1) (2) collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =20 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =10v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =2v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe
3 power transistors 2sD1257, 2sD1257a t on , t stg , t f i c area of safe operation (aso) r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w ) 08 26 47 15 3 0.01 0.03 0.1 0.3 1 3 10 30 100 pulsed t w =1ms duty cycle=1% i c /i b =10(i b1 =? b2 ) v cc =50v t c =25?c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp i c t=0.5ms 10ms 300ms 1ms 2sD1257 2sD1257a collector to emitter voltage v ce ( v ) collector current i c ( a )
|
