any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft? control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 2sb776 : pnp epitaxial planar silicon transistor 2sD896 : npn triple diffused planar silicon transistor 100v/7a, af 40w output applications ordering number:enn678f 2sb776/2sD896 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 90503tn (kt)/91098ha (kt)/90595mo (kot)/4017ki/1115mw, ts 8-341g/7089 no.678C1/4 r e t e m a r a pl o b m y ss n o i t i d n o cs g n i t a rt i n u e g a t l o v e s a b - o t - r o t c e l l o cv o b c 0 2 1 ) (v e g a t l o v r e t t i m e - o t - r o t c e l l o cv o e c 0 0 1 ) (v e g a t l o v e s a b - o t - r e t t i m ev o b e 6 ) (v t n e r r u c r o t c e l l o ci c 7 ) (a ) e s l u p ( t n e r r u c r o t c e l l o ci p c 1 1 ) (a n o i t a p i s s i d r o t c e l l o cp c 0 7w e r u t a r e p m e t n o i t c n u jj t 0 5 1 e r u t a r e p m e t e g a r o t sg t s t 0 5 1 + o t 5 5 specifications absolute maximum ratings at ta = 25?c package dimensions unit:mm 2022a [2sb776/2sD896] features capable of being mounted easily because of one- point fixing type plastic molded package (interchangeable with to-3). wide aso because of on-chip ballast resistance. goode dependence of f t on current and excellent high frequency responce. the descriptions in parentheses are for the 2sb776 only ; other descriptions than those in parentheses are common to the 2sb776 and 2sD896. ? c ? c electrical characteristics at ta = 25?c 1 : base 2 : collector 3 ; emitter sanyo : to-3pb tc=25 ? c r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m t n e r r u c f f o t u c r o t c e l l o ci o b c v b c i , v 0 8 ) ( = e 0 =1 . 0 ) (a m t n e r r u c f f o t u c r e t t i m ei o b e v b e i , v 4 ) ( = c 0 =1 . 0 ) (a m n i a g t n e r r u c c d h e f 1v e c i , v 5 ) ( = c a 1 ) ( =* 0 6* 0 0 2 h e f 2v e c i , v 5 ) ( = c a 4 ) ( =0 2 t c u d o r p h t d i w d n a b - n i a gf t v e c i , v 5 ) ( = c a 1 ) ( =5 1z h m e c n a t i c a p a c t u p t u oc b o v b c z h m 1 = f , v 0 1 ) ( = ) 0 0 2 (f p 0 4 1f p e g a t l o v r e t t i m e - o t - e s a bv e b v e c i , v 5 ) ( = c a 1 ) ( =5 . 1 ) (v * : the 2sb776/2sD896 are classified by 1a h fe as follows : continued on next page. k n a rde h e f 0 2 1 o t 0 60 0 2 o t 0 0 1 15.6 2.6 3.5 1.2 14.0 1.6 1.0 2.0 0.6 20.0 20.0 15.0 1.3 3.2 4.8 2.0 0.6 5.45 5.45 1.4 1 2 3
2sb776/2sD896 no.678C2/4 switching time test circuit continued from preceding page. r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m e g a t l o v n o i t a r u t a s r e t t i m e - o t - r o t c e l l o cv ) t a s ( e c i c i , a 4 ) ( = b a 4 . 0 ) ( = ) 9 . 0 (0 . 2v 6 . 0v e g a t l o v n w o d k a e r b e s a b - o t - r o t c e l l o cv o b c ) r b ( i c i , a m 5 ) ( = e 0 =0 2 1 ) (v e g a t l o v n w o d k a e r b r e t t i m e - o t - r o t c e l l o cv o e c ) r b ( i c r , a m 5 ) ( = e b = 0 0 1 ) (v i c r , a m 0 5 ) ( = e b = 0 0 1 ) (v e g a t o v n w o d k a e r b e s a b - o t - r e t t i m ev o b e ) r b ( i e i , a m 5 ) ( = c 0 =6 ) (v e m i t n o - n r u tt n o t i u c r i c t s e t d e i f i c e p s e e s ) 2 . 0 (s 2 . 0s e m i t e g a r o t st g t s t i u c r i c t s e t d e i f i c e p s e e s ) 3 . 0 (s 6 . 0s e m i t l l a ft f t i u c r i c t s e t d e i f i c e p s e e s ) 2 . 1 (s 0 . 6s v r 200 ? r b 1 ? v cc =20v v be = --2v + + 51 ? input output r l 20 ? 1 f1 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =1a (for pnp, the polarity is reversed.) 0 --10 --20 --30 --40 i c -- v ce 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 0 -- 1 -- 2 -- 3 -- 4 -- 5 itr08367 i c -- v be 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 itr08369 2sb776 v ce = --5v 2sb776 0 1 2 3 4 5 i c -- v be 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 itr08370 2sD896 v ce =5v i b =0 0 10203040 i c -- v ce 0 1 2 3 4 5 6 7 itr08368 2sD896 i b =0 --40ma --20ma --10ma --60ma --80ma --120ma --100ma 40ma 20ma 10ma 60ma 80ma 120ma 100ma collector current, i c Ca collector-to-emitter voltage, v ce Cv collector current, i c Ca collector-to-emitter voltage, v ce Cv collector current, i c Ca base-to-emitter voltage, v be Cv collector current, i c Ca base-to-emitter voltage, v be Cv
2sb776/2sD896 no.678C3/4 cob -- v cb itr08375 -- 0 . 1 23 57 -- 1 . 0 23 57 -- 1 0 2 10 100 1000 5 7 2 3 5 7 2 3 h fe -- i c itr08373 v ce (sat) -- i c itr08377 5 -- 0 . 1 -- 1 . 0 5 7 2 3 7 -- 1 0 5 7 2 3 2 3 -- 1 . 0 -- 0 . 1 23 57 -- 1 0 23 57 2sb776 i c / i b =10 2 100 1000 5 7 2 3 2 5 7 3 -- 1 0 -- 1 . 0 23 57 --100 23 57 2sb776 f=1mhz 0.1 23 57 1.0 23 57 10 2 10 100 1000 5 7 2 3 5 7 2 3 h fe -- i c itr08374 2sD896 v ce =5v cob -- v cb itr08376 2 100 1000 5 7 2 3 2 5 7 3 10 1.0 23 57 100 23 57 2sD896 f=1mhz v ce (sat) -- i c itr08378 5 0.1 1.0 5 7 2 3 7 10 5 7 2 3 2 3 1.0 0.1 23 57 10 23 57 2sD896 i c / i b =10 2sb776 v ce = --5v f t -- i c itr08371 1.0 10 5 7 2 3 5 2 3 -- 1 . 0 -- 0 . 1 23 57 -- 1 0 23 57 2sb776 v ce = --5v f t -- i c itr08372 1.0 10 5 7 2 3 5 2 3 1.0 0.1 23 57 10 23 57 2sD896 v ce =5v gain-bandwidth product, f t C mhz collector current, i c Ca gain-bandwidth product, f t C mhz collector current, i c Ca dc current gain, h fe collector current, i c Ca dc current gain, h fe collector current, i c Ca output capacitance, cob C pf collector-to-base voltage, v cb -- v output capacitance, cob C pf collector-to-base voltage, v cb -- v collector current, i c Ca collector-to-emitter saturation voltage, v ce (sat) C v collector current, i c Ca collector-to-emitter saturation voltage, v ce (sat) C v
specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of september, 2003. specifications and information herein are subject to change without notice. 2sb776/2sD896 ps no.678C4/4 10 100 25 37 57 2 a s o 0.1 1.0 5 7 3 2 10 5 7 3 2 2 itr08381 10ms 100ms 1ms dc operation 2sb776 / 2sD896 (for pnp, minus sign is omitted.) p c -- tc itr08382 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 i c =7a i cp =11a 5 --1.0 --10 5 2 3 5 7 2 3 7 --1.0 --0.1 23 57 --10 23 57 v be (sat) -- i c itr08379 2sb776 i c / i b =10 5 1.0 10 5 2 3 5 7 2 3 7 1.0 0.1 23 57 10 23 57 v be (sat) -- i c itr08380 2sD896 i c / i b =10 2sb776 / 2sD896 collector current, i c Ca base-to-emitter saturation voltage, v be (sat) C v collector current, i c Ca base-to-emitter saturation voltage, v be (sat) C v collector-to-emitter voltage, v ce Cv collector current, i c Ca collector dissipation, p c Cw case temperature, tc C ?c
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