2sj314-01l,s p-channel mos-fet fap-iii series -60v 0,3w -5a 20w > features > outline drawing - high current - low on-resistance - no secondary breakdown - low driving power - high forward transconductance - avalanche proof > applications - motor control - general purpose power amplifier - dc-dc converters > maximum ratings and characteristics > equivalent circuit - absolute maximum ratings (t c =25c), unless otherwise specified item symbol rating unit drain-source-voltage v ds -60 v drain-gate-voltage(r gs =20k w ) v dgr -60 v continous drain current i d -5 a pulsed drain current i d(puls) -20 a gate-source-voltage v gs 20 v max. power dissipation p d 20 w operating and storage temperature range t ch 150 c t stg -55 ~ +150 c - electrical characteristics (t c =25c), unless otherwise specified item symbol test conditions min. typ. max. unit drain-source breakdown-voltage v (br)dss i d =1ma v gs =0v -60 v gate threshhold voltage v gs(th) i d =1m a v ds= v gs -1,0 -1,5 -2,5 v zero gate voltage drain current i dss v ds =-60v t ch =25c -10 -500 a v gs =0v t ch =125c -0,2 -1,0 ma gate source leakage current i gss v gs =20v v ds =0v 10 100 na drain source on-state resistance r ds(on) i d =-2,5a v gs =-4v 0,28 0,48 w i d =-2,5a v gs =-10v 0,2 0,3 w forward transconductance g fs i d =-2,5a v ds =-25v 2 4,5 s input capacitance c iss v ds =-25v 500 750 pf output capacitance c oss v gs =0v 200 300 pf reverse transfer capacitance c rss f=1mhz 120 180 pf turn-on-time t on ( t on =t d(on) +t r ) t d(on) v cc =-30v 15 23 ns t r i d =-3a 20 30 ns turn-off-time t off (t on =t d(off) +t f ) t d(off) v gs =-10v 100 150 ns t f r gs =25 w 80 120 ns avalanche capability i av l=100h t ch =25c -5 a continous reverse drain current i dr t c =25c -5 a pulsed reverse drain current i drm t c =25c -20 a diode forward on-voltage v sd i f =2xi dr v gs =0v t ch =25c -4,0 v reverse recovery time t rr i f =i dr v gs =0v 80 ns reverse recovery charge q rr -di f /d t =100a/s t ch =25c 0,18 c - thermal characteristics item symbol test conditions min. typ. max. unit thermal resistance r th(ch-a) channel to air c/w r th(ch-c) channel to case 6,25 c/w collmer semiconductor, inc. - p.o. box 702708 - dallas, tx -75370 - 972-233-1589 - fax 972-233-0481 - http://www.collmer.com
p-channel mos-fet 2sj314-01l,s -60v 0,3w -5a 20w fap-iii series > characteristics typical output characteristics drain-source-on-state resistance vs. t ch typical transfer characteristics - 1 - 2 - 3 i d [a] r ds(on) [ w ] i d [a] v ds [v] ? t ch [c] ? v gs [v] ? typical drain-source-on-state-resistance vs. i d typical forward transconductance vs. i d gate threshold voltage vs. t ch - 4 - 5 - 6 r ds(on) [ w ] g fs [s] v gs(th) [v] i d [a] ? i d [a] ? t ch [c] ? typical capacitance vs. v ds typical input charge - 7 - 8 - c [nf] v ds [v] v gs [v] v ds [v] ? q g [nc] ? allowable power dissipation vs. t c safe operation area - z th(ch-c) [k/w] transient thermal impedance - 10 - 12 11 p d [w] i d [a] t c [c] ? v ds [v] ? t [s] ? this specification is subject to change without notice!
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