mar. 2002 mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type ? ? ? measurement point of case temperature ? ? ? ? t 1 terminal t 2 terminal gate terminal 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? e bcr5km outline drawing dimensions in mm to-220fn application control of heater such as electric rice cooker, electric pot i t (rms) .................................................................. 5a v drm ................................................................. 600v i fgt ! , i rgt ! , i rgt # ................... 15ma (10ma) ? 3 ul recognized: yellow card no.e80276(n) file no. e80271 ? 1. gate open. i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso symbol a a a 2 s w w v a c c g v 5 50 10.4 3 0.3 10 2 ?0 ~ +125 ?0 ~ +125 2.0 2000 symbol v v maximum ratings value corresponding to 1 cycle of half wave 60hz, surge on-state current v drm v dsm rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage parameter parameter voltage class unit ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=103 c 60hz sinewave 1 full cycle, peak value, non-repetitive t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 12 600 720 refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 ? ? ? ? ! ! # ! ! # ? ? ? ? ? ? ? ? ? ? 3.8 50 ! @ # ! @ # min. 0.2 ma v v v v ma ma ma v electrical characteristics mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type performance curves refer to the page 6 as to the product guaranteed maximum junction temperature 150 1 t j = 25 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
mar. 2002 mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 1 2 10 2 357 2 10 3 357 2 10 4 357 v gt = 1.5v i gm = 2a p gm = 3w p gm = 0.3w i gt = 15ma t j = 25 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 i rgt iii 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 2 2 10 3 357 2 10 4 357 2 10 5 357 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 0 0.5 1.0 1.5 2.0 4.0 2.5 3.0 3.5 10 1 2 10 0 357 2 10 1 357 2 10 2 357 23 10 2 5710 3 23 57 0 2 4 6 8 10 9 7 5 3 1 012345678910 i rgt i i fgt i maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( gate characteristics ( , ? and ?? ) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( gate trigger voltage vs. junction temperature junction temperature ( maximum transient thermal impedance characteristics (junction to ambient) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) 10 360
mar. 2002 mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 60 20 20 60 100 140 40 0 40 80 120 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 60 20 20 60 100 140 40 0 40 80 120 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 60 40 0 40 20 80 120 20 60 100 140 v d = 12v 0 20 40 60 80 100 120 140 160 012345678 allowable case temperature vs. rms on-state current case temperature ( allowable ambient temperature vs. rms on-state current ambient temperature ( allowable ambient temperature vs. rms on-state current ambient temperature ( repetitive peak off-state current vs. junction temperature junction temperature ( holding current vs. junction temperature laching current vs. junction temperature laching current (ma) t 2 + , g + t 2 , g typical example t 2 + , g typical example distribution typical example distribution curves apply regardless of conduction angle 360 ? ? ?
mar. 2002 mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 40 60 20 0 20 60 80 140 100120 60 120 typical example typical example iii quadrant t j = 125 breakover voltage vs. junction temperature junction temperature ( breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ gate trigger current vs. gate current pulse width gate trigger pulse width ( ? ? ? 1 3 2 gate trigger characteristics test circuits
mar. 2002 mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type ? ? ? measurement point of case temperature ? ? ? ? t 1 terminal t 2 terminal gate terminal 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? e bcr5km outline drawing dimensions in mm to-220fn application control of heater such as electric rice cooker, electric pot (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. i t (rms) .................................................................. 5a v drm ................................................................. 600v i fgt ! , i rgt ! , i rgt # ................... 15ma (10ma) ? 3 ul recognized: yellow card no.e80276(n) file no. e80271 ? 1. gate open. i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso symbol a a a 2 s w w v a c c g v 5 50 10.4 3 0.3 10 2 ?0 ~ +150 ?0 ~ +150 2.0 2000 symbol v v maximum ratings value corresponding to 1 cycle of half wave 60hz, surge on-state current v drm v dsm rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage parameter parameter voltage class unit ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=128 c 60hz sinewave 1 full cycle, peak value, non-repetitive t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 12 600 720 the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 ? ? ? ? ! ! # ! ! # ? ? ? ? ? ? ? ? ? ? 3.8 50 ! @ # ! @ # min. 0.2/0.1 ma v v v v ma ma ma v electrical characteristics mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type performance curves the product guaranteed maximum junction temperature 150 1 0.5 t j = 25 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
mar. 2002 mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 1 3 2 v gt = 1.5v i gm = 2a p gm = 3w p gm = 0.3w t j = 25 1 2 10 0 357 2 10 1 357 2 10 2 357 23 10 2 57 7 10 2 2 10 3 357 2 10 4 357 2 10 5 357 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 0 2 4 6 8 10 9 7 5 3 1 012345678910 10 1 10 3 7 5 3 2 10 2 7 5 4 4 3 2 60 20 20 60 100 160 140 40 0 40 80 120 10 0 10 2 5 10 1 5 7 2 3 7 2 3 10 3 5 7 2 3 60 20 20 60 100 160 140 40 0 40 80 120 i fgt i i rgt i i rgt iii maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( gate characteristics ( , ? and ?? ) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( gate trigger voltage vs. junction temperature junction temperature ( maximum transient thermal impedance characteristics (junction to ambient) typical example typical example maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) 360
mar. 2002 the product guaranteed maximum junction temperature 150 mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 60 20 20 60 100 140 160 40 0 40 80 120 10 3 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 1 10 0 60 20 20 60 100 160 140 40 0 40 80 120 10 3 7 5 3 2 10 2 10 4 7 5 3 2 10 5 7 5 3 2 10 6 7 5 3 2 60 20 20 60 100 160 140 40 0 40 80 120 allowable case temperature vs. rms on-state current case temperature ( allowable ambient temperature vs. rms on-state current ambient temperature ( allowable ambient temperature vs. rms on-state current ambient temperature ( repetitive peak off-state current vs. junction temperature junction temperature ( holding current vs. junction temperature laching current vs. junction temperature laching current (ma) junction temperature ( , g typical example t 2 + , g typical example distribution distribution typical example v d = 12v curves apply regardless of conduction angle 360
mar. 2002 mitsubishi semiconductor ? triac ? bcr5km medium power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 60 20 20 60 100 160 140 40 0 40 80 120 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 0 10 1 23457 10 2 23457 10 1 10 2 2 3 4 5 7 10 3 2 3 4 5 7 i fgt i i rgt i i rgt iii c 1 c 1 = 0.1~0.47 ? ? ? ? ? recommended circuit values around the triac test procedure 1 3 2 gate trigger characteristics test circuits typical example typical example i quadrant iii quadrant t j = 125 breakover voltage vs. junction temperature junction temperature ( breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ gate trigger current vs. gate current pulse width gate trigger pulse width (
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