data sheet no. pd 60069-h description the irsf3031 is a three-terminal monolithic smart power mosfet with built-in short circuit, over-temperature, esd and over-voltage protections and dual set/reset input threshold . the on-chip protection circuit latches off the power mosfet in case the drain current exceeds 4a (typical) or the junction temperature exceeds 165 o c (typical) and keeps it off until the input is driven below the reset threshold voltage. the drain to source voltage is actively clamped at 55v prior to the avalanche of the power mosfet, thus improving its perfor- mance during turn-off with inductive loads. the input requirements are very low (100a typical) which makes the irsf3031 compatible with most existing designs based on standard power mosfets. fully protected power mosfet switch features ? controlled slew rate reduces emi ? over temperature protection ? over current protection ? active drain-to-source clamp ? esd protection ? lead compatible with standard power mosfet ? low operating input current ? monolithic construction ? dual set/reset threshold input applications ? solenoid driver ? dc motor driver ? programmable logic controller packages irsf3031 (note: for new designs, we recommend ir?s new products ips021 and ips021l) 3 lead sot-223 3 lead to220ab block diagram drain source q q + - vref r s t j + input 1v 3.5v - - + bias & ref ground isolation + - drain source input v ds(clamp) 50 v r ds(on) 200 m ? i ds(sd) 4 a t j(sd) 165 o c e as 200 mj product summary www.irf.com 1
irsf3031 2 www.irf.com n otes : when mounted on a 1" square pcb (fr-4 or g10 material). for recommended footprint and soldering techniques, refer to international rectifier application note an-994. e as is tested with a constant current source of 6a applied for 700s with v in = 0v and starting t j = 25 o c. input current must be limited to less than 5ma with a 1k ? resistor in series with the input when the body-drain diode is forward biased. static electrical characteristics (t c = 25 o c unless otherwise specified.) symbol parameter min. typ. max. units test conditions v ds,clamp drain to source clamp voltage 50 56 65 v i ds = 2a r ds(on) drain to source on resistance ? 155 200 m ? v in = 5v, i ds = 2a i dss drain to source leakage current ? ? 250 av ds = 40v, v in = 0v v set input threshold voltage 2.5 3.2 4.0 v v ds = 5v, i ds > 10ma v reset input protection reset threshold voltage 0.5 1.0 1.5 v v ds = 5v, i ds < 10 a i i,on input supply current (normal operation) ? 100 300 av in = 5v i i,off input supply current (protection mode) ? 120 400 av in = 5v v in, clamp input clamp voltage 9 10 ? v i in = 1ma v sd body-drain diode forward drop ? ? 1.5 ? v i ds = -2a, r in = 1k ? symbol parameter min. typ. max. units t est conditions r thjc thermal resistance, junction-to-case ? ? 4 o c/w to-220ab r thja thermal resistance, junction-to-ambient ? ? 60 r thjc thermal resistance, junction-to-case ? ? 40 o c/w sot-223 r thja thermal resistance, junction-to-pcb ? ??60 thermal characteristics absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (t c = 25 o c unless otherwise specified.) symbol parameter min. max. units t est conditions v ds, max continuous drain to source voltage ? 50 v v in, max continuous input voltage -0.3 10 i ds continuous drain current ? self limited a p d power dissipation ? 30 w t c 25 o c, to220 ? 3.0 w t c 25 o c, sot223 e as unclamped single pulse inductive energy ? ? 200 mj v esd1 electrostatic discharge voltage (human body model) ? 4000 v 100pf. 1.5k ? v esd2 electrostatic discharge voltage (machine model) ? 1000 200pf, 0 ? t jop operating junction temperature range -55 150 t stg storage temperature range -55 150 o c t l lead temperature (soldering, 10 seconds) ? 300
irsf3031 www.irf.com 3 switching electricalcharacteristics (v cc = 14v, resistive load (r l ) = 10 ? , r in = 100 ? . specifications measured at t c = 25 o c unless otherwise specified.) symbol parameter min. typ. max. units test conditions t don turn-on delay time ? ? 30 v in = 2v to 5v, 50% to 90% t r rise time ? ? 30 s v in = 2v to 5v, 90% to 10% t doff turn-off delay time ? ? 30 v in = 5v to 2v, 50% to 10% t r fall time ? ? 30 v in = 5v to 2v, 10% to 90% sr output positive slew rate -6 ? 6 v/ s v in = 2v to 5v, +dvds/dt sr output negative slew rate -6 ? 6 v in = 5v to 2v, -dvds/dt protection characteristics (t c = 25 o c unless otherwise specified. symbol parameter min. typ. max. units test conditions i ds(sd) current limit 1.8 4 6 a vin = 5v t j(sd) over temperature shutdown threshold 155 165 ? o c vin = 5v, ids = 2a v protect min. input voltage for over-temp function ? 3 ? v t iresp over current response time ? tbd ? s i peak peak short circuit current ? tbd ? a t reset protection reset time ? tbd ? s t tresp over-temperature response time ? tbd ? lead assignments part number (2) d 1 2 3 in d s 3 lead - sot223 IRSF3031L 1 2 3 in d s 3 lead - to220 2 (d) irsf3031
irsf3031 4 www.irf.com (to-261aa) 01-0022 05 case outline - sot-223
irsf3031 www.irf.com 5 ir world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 0bl, united kingdom tel: ++44 (0) 20 8645 8000 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171-0021 tel: 81 (0) 33 983 0086 ir hong kong: unit 308, #f, new east ocean centre, no. 9 science museum road, tsimshatsui east, kowloon, hong kong tel: (852) 2803-7380 data and specifications subject to change without notice. 4/11/2000 tape & reel - sot223 01-0028 05 / 01-0008 02 irgb 01-3026 01 case outline 3 lead - to220 notes: 2x
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