features trenchfet power mosfet 175 c junction temperature applications 12-v automotive systems - load switch - motor drive - dc/dc SUM75N06-09L vishay siliconix new product document number: 72037 s-22123?rev. a, 25-nov-02 www.vishay.com 1 n-channel 60-v (d-s), 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 0.0093 @ v gs = 10 v 90 60 0.0135 @ v gs = 4.5 v 62 d g s n-channel mosfet SUM75N06-09L to-263 s g top view drain connected to tab d absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 gate-source voltage v gs 20 v t c = 25 c 90 continuous drain current (t j = 175 c) t c = 100 c i d 53 pulsed drain current i dm 160 a avalanche current i ar 50 repetitive avalanche energy a l = 0.1 mh e ar 125 mj t c = 25 c p d 125 b power dissipation t a = 25 c c p d 3.75 c w operating junction and storage temperature range t j , t stg -55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount ) c r thja 40 junction-to-case r thjc 1.2 c/w notes: a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
SUM75N06-09L vishay siliconix new product www.vishay.com 2 document number: 72037 s-22123 ? rev. a, 25-nov-02 mosfet specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 2 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 60 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 60 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 75 a v gs = 10 v, i d = 30 a 0.0075 0.0093 v gs = 10 v, i d = 30 a, t j = 125 c 0.0163 v gs = 10 v, i d = 30 a, t j = 175 c 0.024 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 30 a 0.0105 0.0135 v gs = 4.5 v, i d = 30 a, t j = 125 c 0.0224 v gs = 4.5 v, i d = 30 a, t j = 175 c 0.030 forward transconductance a g fs v ds = 15 v, i d = 30 a 25 75 s dynamic b input capacitance c iss 2400 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 430 pf reversen transfer capacitance c rss 210 total gate charge c q g 47 75 gate-source charge c q gs v ds = 30 v, v gs = 10 v, i d = 90 a 12 nc gate-drain charge c q gd ds gs d 13 turn-on delay time c t d(on) 7 12 rise time c t r v dd = 30 v, r l = 0.4 30 50 turn-off delay time c t d(off) v dd = 30 v, r l = 0.4 i d 90 a, v gen = 10 v, r g = 2.5 25 40 ns fall time c t f d gen g 12 20 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 90 pulsed current i sm 160 180 a forward voltage a v sd i f = 90 a, v gs = 0 v 1.4 v reverse recovery time t rr 40 80 ns peak reverse recovery current i rm(rec) i f = 50 a, di/dt = 100 a/ s 2 4 a reverse recovery charge q rr f 0.040 0.16 c notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUM75N06-09L vishay siliconix new product document number: 72037 s-22123 ? rev. a, 25-nov-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 800 1600 2400 3200 4000 0 102030405060 0 4 8 12 16 20 0 20406080100 0 20 40 60 80 100 120 0 102030405060 0.005 0.008 0.011 0.014 0.017 0.020 0 20406080100 0 40 80 120 160 0123456 0 40 80 120 160 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs v gs - gate-to-source voltage (v) - transconductance (s) g fs 25 c -55 c 3 v t c = 125 c v ds = 30 v i d = 75 a v gs = 10 thru 5 v v gs = 10 v c rss t c = -55 c 25 c 125 c 4 v v gs = 4.5 v - on-resistance ( r ds(on) ) - drain current (a) i d c iss c oss
SUM75N06-09L vishay siliconix new product www.vishay.com 4 document number: 72037 s-22123 ? rev. a, 25-nov-02 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature avalanche current vs. time 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) - on-resistance ( r ds(on) ) 0 60 64 68 72 76 80 -50 -25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c (v) v (br)dss i d = 10 ma 100 1 0.0001 i av (a) @ t a = 25 c 1.5
SUM75N06-09L vishay siliconix new product document number: 72037 s-22123 ? rev. a, 25-nov-02 www.vishay.com 5 thermal ratings 0 15 30 45 60 75 90 0 25 50 75 100 125 150 175 safe operating area, junction-to-case v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.1 100 maximum avalanche drain current vs. case t emperature t c - case temperature ( c) - drain current (a) i d 1 ms - drain current (a) i d 1 limited by r ds(on) t c = 25 c single pulse 10 ms dc, 100 ms 10 s 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 110 0.2 0.1 duty cycle = 0.5 single pulse 0.05 0.02 thermal impedance normalized effective transient
|
