thick film hybrid ic inchange STK730-010 self-excitation type semi-regulated switching regulator ? features package dimensions ?q power mosfet devices unit:mm ?q ideal for semi-regulated control switching supplies ?q error detection circuit on-chip (40.5 ?0.5v set reference voltage) ?q pin compatible with all other devices in the same series of devices with 110 to 280w power ratings ?q higher oscillator frequency allows the use of smaller pulse transformers ? applications ?q crt/ctv power supplies ?q office automation equipment power supplies ? block diagram pin functions (1) vref(40.5v typ) input (2) error detection level (3) ground (4) drive voltage input (5) tr1 gate (6) amplifier circuit control (7) ocp setting level input (8) tr1 source (9) tr1 source (11) tr1 drain (12) tr1 drain
thick film hybrid ic inchange specifications ? maximum ratings at ta=25 ?? , tc=25 ?? unless otherwise specified parameter symbol conditions ratings unit operating substrate temperature t c max recommended value is 105 ?? 115 ?? ac input voltage v ac specified test circuit 140 vrms operating temperature topr -10 to+85 ?? storage temperature tstg -30 to+115 ?? maximum output power wo max specified test circuit v o =135v 110 w (tr1) drain current i d 6 a pulse drain current i d(pulse) 20 a drain reverse current i dr 6 a gate-source voltage v gss ? 30 v allowable power dissipation p d 78.1 w chip junction temperature tj max 150 ?? thermal resistance | j-c 1.6 ?? /w (zd1) allowable power dissipation p zd1 500 mw chip junction temperature tj(zd1)max 125 ?? thermal resistance | j-c(zd1) 0.2 ?? /mw ? allowable operating ranges at ta=25 ?? parameter symbol conditions ratings unit pin 4 input voltage v 4 ? 8 to ? 24 v oscillator frequency f osc 20 to 120 khz ? operating characteristics at ta=25 ?? tc=25 ?? ( unless otherwise specified,sp ecified test circuits) parameter symbol conditions min typ max unit output voltage setting i in =8ma 40.0 40.5 41.0 v output voltage temperature coefficient t c =0 to 105 ?? , i in =8ma 7 mv/ ?? (tr1) drain-source breakdown voltage v (br)dss i d =10ma,v gs =0v 500 v gate-source cutoff voltage v gs(off) i d =1ma,v ds =10v 2.0 3.0 v on resistance r ds(on) i d =2.5a,v gs =10v 1.4 1.8 |? input capacitance ciss v ds =10v,v gs =0v,f=1mhz 800 pf (zd1) zener voltage v z i z =5ma 23.7 26.3 v
thick film hybrid ic inchange ? series organization these devices form a series wi th varying output power ratings maximum ratings operating characteristics device v dss [v] tstg [ ?? ] t c max [ ?? ] tj max [ ?? ] i d [a] input voltage [v] output power [w] on resistance [ |? ] STK730-010 6.0 110 1.4 stk730-020 8.0 145 0.8 stk730-030 10.0 180 0.7 stk730-040 12.0 210 0.55 stk730-050 500 15.0 85 to 132 280 0.3 stk730-060 3.0 110 5.0 stk730-070 5.0 180 3.0 stk730-080 6.0 210 2.0 stj730-090 900 -30 to +115 +115 +150 8.0 170 to 264 280 1.2
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