n overview the dn6849/se/te/s is a combination of a hall element, amplifier, schmitt circuit, and stabilized power supply/temper- ature compensator integrated on an identical chip by using the ic technology. it amplifies hall element output at the amplifi- er, converts into a digital signal through the schmitt circuit, and drives the ttl or mos ic directly. n features high sensitivity and low drift stable temperature characteristics due to the additional tem- perature compensator wide operating supply voltage range (v cc =4.5 to 16v) operating in alternative magnetic field ttl and mos ics directly drivable by output output open collector n applications speed sensors position sensors rotation sensors keyboard switches microswitches note) this ic is not suitable for car electrical equipments. dn6849/se/te/s hall ic (operating temperature range topr = ?40 to +100?c, operating in alternative magnetic field) unit : mm dn6849 ssip003-p-0000a (e-3s) 1 : v cc 2 : gnd 3 : output 0.5 0.1 5? 123 2? 5? 5? 2? 1.27 4.0 0.3 0.7 4.5 0.3 0.43 +0.1 ?0.05 2.0 0.3 0.8 0.1 1.0 10.5 0.5 dn6849se 4.52 0.3 0.55 0.15 0.4 0.1 1.54 0.1 1.27 r0.25 2 to 5? 2? 123 12.5 06.5 4.52 0.3 2? 45? ssip003-p-0000 (se-3s) unit : mm (0.4) (0.72) (1.0) (1.0) 1 : v cc 2 : gnd 3 : output dn6849te 4.0 0.3 0.6 0.15 0.5 0.1 1.2 0.1 1.27 123 3.3 0.3 (1.0) (1.0) ssip003-p-0000b (te-3s) 10.0 0.6 unit : mm (0.2) (0.6) (0.7) 1 : v cc 2 : gnd 3 : output 1.6 3.0 0.3 0.6 0.2 esop004-p-0200 (soh-4d) 1 2 4 3 5.4 0.4 3.0 0.3 1.5 0.3 0.4 0.2 0 to 0.1 0.15 0.95 0.2 0.3 to 0.5 dn6849s unit : mm 1 : v cc 2 : nc or gnd 3 : output 4 : gnd hall element ?dn6849/se/te amp. schmitt trigger output stage 3 2 1 v cc output gnd stabilized power supply temperature correction circuit n block diagram 1 hall element ?dn6849s amp. schmitt trigger output stage 3 4 2 v cc output gnd nc or gnd stabilized power supply temperature correction circuit
v cc i cc i o p d t opr t stg supply voltage supply current circuit current power dissipation opearting ambient temperature storage temperature v ma ma mw ?c ?c parameter symbol rating unit n absolute maximum ratings (ta=25?c) 18 8 20 150 ?0 to+100 ?5 to+125 parameter symbol condition min typ max unit n electrical characteristics (ta=25?c) operating flux density ?7.5 b 1 (l to h) mt ? v cc =12v b 2 (h to l) 17.5 mt 6 v cc =12v hysteresis width 7 bw mt 10 v cc =12v low output voltage v ol 0.4 v supply current ma v cc =16v i cc 5.5 ma v cc =4.5v 6 high output current i oh 10 a v cc =4.5 to 16v, i o =12ma, b=17.5mt v cc =4.5 to 16v, v o =16v, b= 17.5mt 1.5 1.5 1.0 1.3 1.0 1.75 1.0 1.0 unit : mm the center of the hall element is in the hatched area in the right figure. ?dn6849 1.0 1.25 1.0 1.63 ?dn6849se 1.0 1.15 1.0 1.5 ?dn6849te ?dn6849s distance from package surface to sensor dn6849 0.7 dn6849se 0.42 dn6849te 0.4 dn6849s 0.65 n hall element position marking surface applied flux direction flux density (b) output voltage (v o ) b 1 b 2 n flux-voltage conversion characteristics
n precaution on use 1. change of the operation magnetic flux density does not depend on the supply voltage, because the stabilization power supply is built-in. (only for the range ; v cc = 4.5 to 16v) 2. change from ??to ?? level increases the supply current by approx. 1ma. sample 2, b l to h ambient temperature (?c) supply current (ma) supply voltage ?ambient temperature 8 7 6 5 4 3 2 1 0 ?0 ?5 0 25 50 75 100 125 v cc = 4.5v v cc = 16v ambient temperature (?c) operating flux density (mt) operating flux density ?ambient temperature 20 10 0 ?0 ?0 ?0 ?5 0 25 50 v cc = 12v 75 100 125 sample 2, b h to l sample 3, b h to l sample 1, b h to l sam ple 3, b l to h sample 1, b l to h ambient temperature (?c) output ??level voltage (mv) output low level voltage ?ambient temperature 100 90 80 70 60 50 40 30 20 10 0 ?0 ?5 0 25 50 v cc = 12v i o = 12ma 75 100 125 supply voltage (v) operating flux density (mt) operating flux density ?supply voltage 20 10 0 ?0 ?0 02468101214161820 ta = 25?c b h to l b l to h n characteristics curve
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