SUB50N03-20C vishay siliconix document number: 71175 s-02575?rev. c, 27-nov-00 www.vishay.com 1 current sensing mosfet, n-channel 30-v (d-s)
v (br)dss (v) r ds(on) ( ) i d (a) 0.015 @ v gs = 10 v 50 a 30 0.02 @ v gs = 4.5 v 48 a d (tab, 3) g s (5) n-channel mosfet d 2 pak-5 s gd sense 5 1 3 24 sense (1) (2) kelvin (4)
parameter symbol limit unit drain-source voltage v ds 30 gate-source voltage v gs 20 v t c = 25 c 50 a continuous drain current (t j = 175 c) t c = 125 c i d 32 a pulsed drain current i dm 100 a avalanche current i ar 25 repetitive avalanche energy b l = 0.1 mh e ar 31 mj t c = 25 c 83 c maximum power dissipation b t a = 25 c p d 2.7 d w operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol limit unit junction-to-ambient pcb mount d r thja 55 junction-to-case r thjc 1.8 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
SUB50N03-20C vishay siliconix www.vishay.com 2 document number: 71175 s-02575 ? rev. c, 27-nov-00
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 30 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 dss v ds = 30 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 25 a 0.012 0.015 v gs = 10 v, i d = 25 a, t j = 125 c 0.019 0.024 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 25 a, t j = 175 c 0.022 0.027 v gs = 4.5 v, i d = 24 a 0.016 0.02 forward transconductance a g fs v ds = 15 v, i d = 25 a 30 s dynamic b input capacitance c iss 1960 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 380 pf reversen transfer capacitance c rss 180 total gate charge c q g 35 50 gate-source charge c q gs v ds = 15 v, v gs = 20 v, i d = 50 a 7.6 nc gate-drain charge c q gd ds gs d 5.6 turn-on delay time c t d(on) 10 20 rise time c t r v dd = 15 v, r l = 0.3 93 180 turn-off delay time c t d(off) v dd = 15 v, r l = 0.3 i d 50 a, v gen = 10 v, r g = 2.5 30 60 ns fall time c t f d gen g 10 20 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 50 pulsed current i sm 100 a forward voltage a v sd i f = 50 a, v gs = 0 v 1.3 1.6 v reverse recovery time t rr 35 70 ns peak reverse recovery current i rm(rec) i f = 50 a, di/dt = 100 a/ s 1.5 a reverse recovery charge q rr f 0.026 c current sense characteristics current sensing ratio r i d = 1 a, v gss = 10 v, r sense = 2.2 420 520 620 mirror active resistance r m(on) v gs = 10 v, i d = 10 ma 3.5 notes: a. pulse test; pulse width 300 s, duty cycle 2%. e. guaranteed by design, not subject to production testing. b. independent of operating temperature.
SUB50N03-20C vishay siliconix document number: 71175 s-02575 ? rev. c, 27-nov-00 www.vishay.com 3 0 500 1000 1500 2000 2500 3000 0 6 12 18 24 30 0 2 4 6 8 10 0 5 10 15 20 25 30 35 0 20 40 60 80 0 20406080100 0.00 0.01 0.02 0.03 0.04 0 20406080100 0 20 40 60 80 100 0123456 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 25 c 125 c 3 v t c = ? 55 c v gs = 15 v i d = 50 a v gs = 10 thru 5 v v gs = 10 v c iss c oss c rss t c = ? 55 c 25 c 125 c 4 v v gs = 4.5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d 2 v
SUB50N03-20C vishay siliconix www.vishay.com 4 document number: 71175 s-02575 ? rev. c, 27-nov-00 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 25 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) ) 0
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 200 10 0.1 1 10 100 limited by r ds(on) 1 100 t c = 25 c single pulse maximum drain current vs. case temperature t c ? case temperature ( c) ? drain current (a) i d 0.001 s 0.01 s 0.1 s dc normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 ? drain current (a) i d 0.0001 s
SUB50N03-20C vishay siliconix document number: 71175 s-02575 ? rev. c, 27-nov-00 www.vishay.com 5 0 2 4 6 8 10 0.00 0.02 0.04 0.06 0.08 0.10 on-resistance vs. sense current i sense (a) ? on-resistance ( r ds(on) ) 0 200 400 600 800 1000 0 2 4 6 8 10121416 current ratio (i (main)/is ) vs. gate-source voltage (figure 1) ratio 0 2 4 6 8 10 0246810 on-resistance vs. gate-source voltage ? on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v v gs ? gate-to-source voltage (v) v gs ? gate-to-source voltage (v) i d = 10 ma r s = 6.6 r s = 4.7 r s = 2.2 r s = 1.1 g v g sense s kelvin r s figure 1
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