a tmmbar 28 small signal schottky diode description metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. primarly intended for high level uhf/vhf detection and pulse application with broad dynamic range. matched batches are available on request. november 1994 minimelf (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 70 v i f forward continuous current t i = 25 c 15 ma i fsm surge non repetitive forward current t p 1s 50 ma t stg t j storage and junction temperature range - 65 to 200 - 65 to 200 c t l maximum temperature for soldering during 15s 260 c absolute maximum ratings (limiting values) symbol test conditions value unit r th(j-l) junction-leads 400 c/w thermal resistance * pulse test: t p 300 m s d < 2% . matched batches available on request. test co nditions (f orward voltage and/or capac itance) according to customer specification. symbol test conditions min. typ. max. unit v br t amb = 25 ci r = 10 m a 70 v v f * t amb = 25 ci f = 1ma 0.41 v t amb = 25 c i f = 15ma 1 i r * t amb = 25 cv r = 50v 0.2 m a static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t amb = 25 cv r = 0v f = 1mhz 2pf t t amb = 25 ci f = 5ma krakauer method 100 ps dynamic characteristics 1/3
2/3 fig.1 : forward current versus forward voltage at low level (typical values). fig.2 : capacitance c versus reverse applied voltage v r (typical values). fig.3 : reverse current versus ambient temperature. fig.4 : reverse current versus continuous reverse voltage (typical values). tmmbar 28
marking: ring at cathode end. weight: 0.05g package mechanical data foot print dimensions (millimeter) minimelf glass b a c c o / 2.5 5 ref. dimensions millimeters inches min. max. min. max. a 3.3 3.6 0.130 0.142 b 1.59 1.62 0.063 0.064 c 0.4 0.5 0.016 0.020 information furnished is believed to be accurate and reliable. however, s gs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without not ice. this publication supersedes and replaces all informat ion previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support dev ices or systems without express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - united kingdom - u.s.a. 3/3 tmmbar 28
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