feb.1999 CM50MD1-12H bw ew gw gw v ev gv gv u eu gu gu p1 p n t s e circuit diagram main circuit terminal control circuit terminal r t = 0.6 t = 0.6 45 gb ; not connected gw ew gw gv e gv gu ev gu eu tbuvw s r n p1 p ggg gbgg g e eee 13 5 8 2.54 2.54 2.54 2.54 2.54 2.54 2.54 10.16 10.16 10.16 17.2 15 15 12.5 12.5 12.5 15 60 58 9 4 0.6 2 6.3 12 15 12.5 2 f 4.5 mounting holes 105 ?.25 29 ?.25 29 ?.25 115 2?5.5 label application ac & dc motor controls, general purpose inverters, servo controls, nc, robotics, ups mitsubishi igbt modules CM50MD1-12H medium power switching use flat-base type, insulated type i c ..................................................................... 50a v ces ............................................................ 600v insulated type cib module 3 f inverter+3 f converter ul recognized yellow card no. e80276 (n) file no. e80271 outline drawing & circuit diagram dimensions in mm
feb.1999 mitsubishi igbt modules CM50MD1-12H medium power switching use flat-base type, insulated type maximum ratings (t j = 25 c) inverter part converter part common rating collector-emitter voltage gate-emitter voltage collector current emitter current maximum collector dissipation 600 20 50 100 50 100 104 g C e short c C e short t c = 25 c pulse (note. 2) t c = 25 c pulse (note. 2) t f = 25 c symbol parameter condition unit rating v v a a a a w v ces v ges i c i cm i e (note. 1) i em (note. 1) p c (note. 3) repetitive peak reverse voltage recommended ac input voltage dc output current surge (non-repetitive) forward current i 2 t for fusing 800 220 50 550 1.2 5 10 3 3 f rectifying circuit t f = 106 c 1 cycle at 60hz, peak value non-repetitive value for one cycle of surge current symbol parameter condition unit rating v v a a a 2 s v rrm e a i o i fsm i 2 t t j t stg v iso junction temperature storage temperature isolation voltage mounting torque weight C40 ~ +150 C40 ~ +125 2500 0.98 ~1.47 100 ac 1 min. mounting m4 screw typical value symbol parameter condition unit rating c c v n . m g
feb.1999 mitsubishi igbt modules CM50MD1-12H medium power switching use flat-base type, insulated type electrical characteristics (t j = 25 c) inverter part converter part note 1. i e , v ec , t rr, q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. thermal resistance is specified under following conditions. ? the conductive greese applied, between module and fin. ? al plate is used as fin. collector cutoff current gate-emitter threshold voltage gate-emitter cutoff current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance v v 1 0.5 2.8 5.0 3.8 1.0 120 300 200 300 2.8 110 1.2 1.9 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 150 c v cc = 300v, i c = 50a, v ge = 15v v cc = 300v, i c = 50a v ge1 = v ge2 = 15v r g = 13 w resistive load i e = 50a, v ge = 0v i e = 50a, v ge = 0v di e / dt = C 100a / m s igbt part, per 1/6 module fwdi part, per 1/6 module ma m a nf nf nf nc ns ns ns ns v ns m c c/w c/w 2.2 150 0.14 i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note. 1) t rr (note. 1) q rr (note. 1) r th(j-f) q (note. 5) r th(j-f) r (note. 5) symbol parameter test conditions v ge(th) v ce(sat) limits min. typ. max. unit 6 4.5 7.5 i c = 5ma, v ce = 10v i c = 50a, v ge = 15v (note. 4) v ce = 10v v ge = 0v repetitive reverse current forward voltage drop thermal resistance v r = v rrm , t j = 150 c i f = 50a per 1/6 module ma v c/w i rrm v fm r th(j-f) (note. 5) symbol parameter condition limits min. typ. max. unit 8 1.5 1.7
feb.1999 5 4 3 2 1 0 100 0 25 50 75 t j = 25 c t j = 125 c v ge = 15v 10 2 7 5 3 2 3 2 0 0.8 1.6 10 1 7 5 3 2.4 3.2 4.0 t j = 25 c 10 8 6 4 2 0 20 10 2 0 4 6 8 12141618 9 7 5 3 1 t j = 25 c i c = 100a i c = 50a i c = 20a 100 75 50 25 0 10 5 1 0 234 6789 v ge = 20 (v) t j =25 c 15 12 11 10 8 9 7 100 75 50 25 0 20 10 2 0 4 6 8 12141618 v ce = 10v t j = 25 c t j = 125 c 10 1 7 5 3 2 10 0 7 5 3 2 357 10 0 23 57 10 1 23 23 57 10 2 10 ? c ies v ge = 0v c oes c res output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) transfer characteristics (typical) collector current i c (a) gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode forward characterisitics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance vs. v ce (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce(sat) (v) mitsubishi igbt modules CM50MD1-12H medium power switching use flat-base type, insulated type performance curves
feb.1999 10 1 10 3 7 5 3 2 10 0 23 57 10 1 10 2 7 5 3 2 23 57 10 2 t d(off) v cc = 300v v ge = ?5v r g = 13 w t j = 125? t d(on) t f t r 10 1 10 3 7 5 3 2 10 0 23 57 10 1 10 2 7 5 3 2 23 57 10 2 10 ? 10 1 7 5 3 2 10 0 7 5 3 2 di/dt = 100a / ? t j = 25? t rr i rr 10 1 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 single pulse t f = 25? r th(j ?f) = 1.2?/ w 10 1 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 single pulse t f = 25? r th(j ?f) = 1.9?/ w 20 16 12 8 4 0 250 200 50 0 100 150 18 14 10 6 2 v cc = 200v v cc = 300v i c = 50a normalized transient thermal impedance z th (j ?f) half-bridge switching characteristics (typical) switching times (ns) collector current i c (a) reverse recovery characteristics of free-wheel diode (typical) reverse recovery time t rr (ns) emitter current i e (a) transient thermal impedance characteristics (igbt part) normalized transient thermal impedance z th (j ?f) time (s) time (s) v ge ?gate charge (typical) gate-emitter voltage v ge (v) gate charge q g (nc) transient thermal impedance characteristics (fwdi part) reverse recovery current l rr (a) mitsubishi igbt modules CM50MD1-12H medium power switching use flat-base type, insulated type
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