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ds04-27300-4e fujitsu semiconductor data sheet copyright?1994-2006 fujitsu limited all rights reserved assp bipolar voltage detector mb3761 description designed for voltage detector applicatio ns, the fujitsu mb3761 is a dual compar ator with a built-in high precision reference voltage generator. outputs are open-collector outputs and enable use of the or-connection between both channels. both channels have hysteresis control ou tputs. because of a wide power supply voltage range and a low power supply current, the mb376 1 is suitable for power supply mo nitors and battery backup systems. features ? wide power supply voltage range: 2.5 v to 40 v low power and small voltag e dependency supply current: 250 a typ built-in stable low voltage generator: 1.20 v typ easy-to-add hysteresis characteristics. one type of package (sop-8pin : 1 type) applications industrial equipment arcade amusement etc.
mb3761 2 pin assignment b a 8 7 6 5 1 2 3 4 in-b hys-a in-a out-a v cc hys-b out-b gnd (top view) (fpt-8p-m01) (+) (+) ( - ) ( - )
mb3761 3 absolute maximum ratings warning: semiconductor devices can be permanently dam aged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. do not exceed these ratings. recommended operating conditions warning: the recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. all of the device?s electrical characteristics are warranted when the device is operated within these ranges. always use semiconductor devices within their recommended operating cond ition ranges. operation outside these ranges may adversely affect re liability and could result in device failure. no warranty is made with respect to uses, operat ing conditions, or combinations not represented on the data sheet. users considering application outside the listed conditions are advised to contact their fujitsu representatives beforehand. parameter symbol rating unit min max power supply voltage v cc ? 41 v output voltage v o ? 41 v output current i o ? 50 ma input voltage v in ? 0.3 + 6.5 v power dissipation p d ? 350 (t a + 70 c) mw storage temperature t stg ? 55 + 125 c parameter symbol value unit min max power supply voltage v cc 2.5 40 v operating ambient temperature t a ? 20 + 75 c output current at pin 4 i o 4 ? 4.5 ma output current at pin 6 i o 6 ? 3.0 ma
mb3761 4 electrical characteristics (t a = + 25 c, v cc =5 v) parameter symbol conditions value unit min typ max power supply voltage i ccl v cc = 40 v, v il = 1.0 v - 250 400 a i cch v cc = 40 v, v ih = 1.5 v - 400 600 a threshold voltage v th i o = 2 ma, v o = 1 v 1.15 1.20 1.25 v deviation of threshold voltage ? v th1 2.5 v v cc 5.5 v - 3 12 mv ? v th2 4.5 v v cc 40 v - 10 40 mv offset voltage between outputs v oosa i oa = 4.5 ma, v oa = 2 v, i ha = 20 a, v ha = 3 v -2.0- mv v ossb i ob = 3 ma, v ob = 2 v, i hb = 3 ma, v hb = 2 v -2.0- mv temperature coefficient of threshold voltage -20 c t a + 70 c- 0.05 -mv/ c difference voltage on threshold voltage between channel ? v thab --10- + 10 mv input current i il v il = 1.0 v - 5 na i ih v ih = 1.5 v - 100 500 na output leakage current i oh v o = 40 v, v il = 1.0 v - - 1 a hysteresis output leakage current i hla v cc = 40 v, v ha = 0 v, v il = 1.0 v --0.1 a i hhb v hb = 40 v, v ih = 1.5 v - - 1 a output sink current i ola v o = 1.0 v, v ih = 1.5 v 6 12 - ma i olb v o = 1.0 v, v ih = 1.5 v 4 10 - ma hysteresis current i hha v h = 0 v, v ih = 1.5 v 40 80 - a i hlb v h = 1.0 v,v il = 1.0 v 4 10 - ma output saturation voltage v ola i o = 4.5 ma, v ih = 1.5 v - 120 400 mv v olb i o = 3.0 ma, v ih = 1.5 v - 120 400 mv hysteresis saturation v hha i h = 20 a, v ih = 1.5 v - 50 200 mv v hlb i h = 3.0 ma, v il = 1.0 v - 120 400 mv output delay time t phl r l = 5 k ? -2- s t plh r l = 5 k ? -3- s
mb3761 5 equivalent circuit operational definitions 8 7 5 6 1 3 4 2 h ys-a o ut-a in-a in-b out-b gnd hys- b v cc v ref 1.2 v r 1 r 2 r 4 r 5 r 3 v in r 6 v h(b) hys-b v o(b) v o(a) r l r l v cc out-b out-a gnd 8 7 6 5 1 2 3 4 v o(a) v il(a) v ih(a) v in v in v in v il(b) v ih(b) v h(b) v o(b) v ih(a) = (1 + )v r v il(a) = (1 + )v r ? v cc r 1 r 2 r 1 r 3 r 1 r 2 // r 3 v ih(b) = (1 + ) v r v il(b) = (1 + ) v r r 5 // r 6 r 4 r 2 // r 3 = r 2 + r 3 r 2 r 3 r 5 // r 6 = r 5 + r 6 r 5 r 6 r 4 r 5 v r = v th (= 1.20 v) . . . . note:
mb3761 6 typical performance characteristics 150 120 90 60 30 0 010203040 v ih = 1.5 v ta=+70?c ta=+25?c ta= - 20?c 500 400 300 200 100 0 010203040 v ih = 1.5 v v il = 1.0 v ta=+70?c ta= - 20?c ta= - 20?c ta=+70?c ta=+25?c ta=+25?c 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 ta= - 20?c ta= +25?c v cc = 5 v v ih = 1.5 v ta= +70?c 1 .22 1 .21 1 .20 1 .19 1 .18 1 .17 01020304 0 ta = +25?c power supply voltage v cc (v) power supply voltage v cc (v) power supply current vs. power supply voltage hysteresis (a) current vs. power supply voltage power supply current i cc (a) hysteresis (a) current i hha (a) 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 ta= +70?c ta= - 20?c ta= +25?c v cc = 5 v v ih = 1.5 v 1.22 1.21 1.20 1.19 1.18 1.17 - 20 0 +40 +60 +80 v cc = 5 v +20 output saturation (a) voltage vs. output sink (a) current output saturation (b) voltage vs. output sink (b) current threshold voltage vs. operating ambient temperature threshold voltage vs. power supply voltage output sink (a) current i ol(a) (ma) output saturation (a) voltage v ola (v) output sink (b) current i ol(b) (ma) output saturation (b) voltage v olb (v) power supply voltage v cc (v) threshold voltage v th (v) operating ambient temperature ta ( c) threshold voltage v th (v)
mb3761 7 application examples 1. addition of hysteresis 2. voltage detection for alarm r 1 r 2 r 3 8 7 6 5 1 2 3 4 v cc (v in ) v o(a) gnd r l r 1 r 2 r 3 8 7 6 5 1 2 3 4 r l c 1 v cc v h(b) gnd v o(b) v o(a) v il(a) v in (v cc ) v ih v h(b) v o(b) v il(b) v ih v il(a) = (1 + )v r r 3 r 2 v ih(a) v ih(b) v ih(a) = (1 + )v r r 3 r 1 + r 2 . . . . v ih(b) = (1 + )v r r 2 r 1 . . v il(b) = (1 + )v r r 2 + r 3 r 1 . . note : all calculations o ccur with the output voltage at 0. the hysteresis values are adjusted for load condition and saturation voltage. r 1 r 2 r 3 8 7 6 5 1 2 3 4 v cc v o gnd r l r 4 v o v ccl v cch v c c r 3 r 4 v ccl = (1 + )v r r 1 v cch = (1 + )v r r 2 for hysteresis, a positive feedback from pin 2 or 7 is required. v ccl 2.5 v
mb3761 8 3. voltage detection for alarm 4. programmable zener r 1 r 2 r 3 8 7 6 5 1 2 3 4 v cc v o gnd r l v o v ccl v cch v cc r 1 r 2 v ccl = (1 + )v r r 3 v cch = (1 + )v r r 4 r 4 v ccl 2.5 v 8 7 6 5 1 2 3 4 v cc gnd r 1 r 2 r 3 r 2 v z = (1 + ) v r r 3 v z r 2 + r 3 v cc - v z r 1 6 ma v z + note : channel b can be used independently.
mb3761 9 5. recovery reset circuit 8 7 6 5 1 2 3 4 v cc = 5 v out gnd 6.8 k ? r 5 out c 1 0.1 f r 3 6.8 k ? 3.3 k ? r 2 r 1 15 k ? 330 k ? r 4
mb3761 10 typical characteristics ? voltage threshold levels (v ccl and v cch ) and hysteresis width can be changed by the resistors (r 1 through r 4 ). ? power-on reset time is provided by the following approximate equation: ? the recommended value of h fe of the external transistor is from 50 to 200. ? in the case of an instant power fail, the remaining charge in c 1 effects t rst . ? if necessary, the reversed output is provided on hys terminal 6 4 2 0 01 2 3 4 5 6 v cc (v) v o (v) 5 0 4.4 0 v cc (l) v cc (h) v cc v o t rst 30 ms v o (v) v cc (v) dc characteristics response characteristics v ccl = r 3 v th r 1 + r 2 + r 3 v cch + r 3 v th r 1 (r 2 + r 3 v ccl = ) r 4 t rst =-c 1 r 4 ? in { 1 - v th v cc (1 + r 1 r 2 + r 3 ) {
mb3761 11 notes on use take account of common impedance when designi ng the earth line on a printed wiring board. take measures against static electricity. - for semiconductors, use antistatic or conductive containers. - when storing or carrying a printed circuit board after ch ip mounting, put it in a conductive bag or container. - the work table, tools and meas uring instruments must be grounded. - the worker must put on a gr ounding device containing 250 k ? to 1 m ? resistors in series. do not apply a negative voltage - applying a negative voltage of ? 0.3 v or less to an lsi may generate a parasitic transistor, resulting in malfunction. ordering information rohs compliance information of lead (pb) free version the lsi products of fujitsu with ?e1? are compliant wi th rohs directive , and has observed the standard of lead, cadmium, mercury, hexavalent chromium, polybr ominated biphenyls (pbb) , and polybrominated diphenyl ethers (pbde) . the product that conforms to this standard is added ?e1? at the end of the part number. marking format (lead free version) part number package remarks mb3761pf- ??? 8-pin plastic sop (fpt-8p-m01) conventional version mb3761pf- ??? e1 8-pin plastic sop (fpt-8p-m01) lead free version index 3761 e1xxxx xxx lead free version
mb3761 12 labeling sample (lead free version) 2006/03/01 assembled in japan g qc pass (3n) 1mb123456p-789-ge1 1000 (3n)2 1561190005 107210 1,000 pcs 0605 - z01a 1000 1/1 1561190005 mb123456p - 789 - ge1 mb123456p - 789 - ge1 mb123456p - 789 - ge1 pb lead free version lead free mark jeita logo jedec logo
mb3761 13 mb3761pf- ??? e1 recommended conditions of moisture sensitivity level [temperature profile for fj standard ir reflow] (1) ir (infrared reflow) (2) manual soldering (partial heating method) conditions : temperature 400 c max times : 5 s max/pin item condition mounting method ir (infrared reflow) , m anual soldering (partial heating method) mounting times 2 times storage period before opening please use it within two years after manufacture. from opening to the 2nd reflow less than 8 days when the storage period after opening was exceeded please processes within 8 days after baking (125 c, 24h) storage conditions 5 c to 30 c, 70 % rh or less (the lowest possible humidity) 260 c (e) (d') (d) 255 c 170 c 190 c rt (b) (a) (c) ~ note : temperature : the top of the package body (a) temperature increase gradient : average 1 c/s to 4 c/s (b) preliminary heating : temperature 170 c to 190 c, 60s to 180s (c) temperature increase gradient : average 1 c/s to 4 c/s (d) actual heating : temperature 260 c max; 255 c or more, 10s or less (d?) : temperature 230 c or more, 40s or less or temperature 225 c or more, 60s or less or temperature 220 c or more, 80s or less (e) cooling : natural cooling or forced cooling h rank : 260 c max
mb3761 14 package dimension 8 -pin pl as tic s op le a d pitch 1.27 mm p a ck a ge width p a ck a ge length 5. 3 6. 3 5 mm le a d s h a pe gullwing s e a ling method pl as tic mold mounting height 2.25 mm max weight 0.10 g code (reference) p- s op 8 -5. 3 6. 3 5-1.27 8 -pin pl as tic s op (fpt- 8 p-m01) (fpt- 8 p-m01) c 2002 fujit s u limited f0 8 002 s -c-6-7 0.1 3 (.005) m det a il s of "a" p a rt 7. 8 0?.40 5. 3 0?. 3 0 (.209?012) (. 3 07?016) .250 ?00 8 +.010 ?.20 +0.25 6. 3 5 index 1.27(.050) 0.10(.004) 14 5 8 0.47?.0 8 (.019?00 3 ) ?.04 +0.0 3 0.17 .007 +.001 ?002 "a" 0.25(.010) ( s t a nd off) 0 ~8 ? (mounting height) 2.00 +0.25 ?.15 .079 +.010 ?006 0.50?.20 (.020?00 8 ) 0.60?.15 (.024?006) 0.10 +0.10 ?.05 ?002 +.004 .004 * 1 0.10(.004) * 2 dimen s ion s in mm (inche s ). note: the v a lue s in p a renthe s e s a re reference v a lue s . note 1) * 1 : the s e dimen s ion s include re s in protru s ion. note 2) * 2 : the s e dimen s ion s do not include re s in protru s ion. note 3 )pin s width a nd pin s thickne ss include pl a ting thickne ss . note 4) pin s width do not include tie ba r cutting rem a inder.
mb3761 f0605 fujitsu limited all rights reserved. the contents of this document are subject to change without notice. customers are advised to consult with fujitsu sales representatives before ordering. the information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of fujitsu semiconductor device; fujitsu does not warrant proper operation of the device with respect to use based on such information. when you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any ot her right of fujitsu or any third party or does fujitsu warrant non-in fringement of any third-party?s intellectual property right or othe r right by using such information. fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. the products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremel y high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, ai rcraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon syst em), or (2) for use requiring extremely high reliability (i.e., su bmersible repeater and artificial satellite). please note that fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. any semiconductor devices have an inherent chance of failure. you must protect against injury, damage or loss from such failures by incorporating safety design m easures into your facility and equipment such as redundancy, fi re protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document represent goods or technologies subject to certain restrictions on export under the foreign exchange and foreign trade law of japan, the prior authorization by japanese government will be required for export of those products from japan. edited business promotion dept.

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