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d a t a sh eet product speci?cation file under discrete semiconductors, sc07 1995 apr 14 discrete semiconductors philips semiconductors bf851a; bf851b; bf851c n-channel junction fets
1995 apr 14 2 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c features high transfer admittance low input capacitance low feedback capacitance low noise. applications preamplifiers for am tuners in car radios. description n-channel symmetrical junction field effect transistors in a sot54 (to-92) package. pinning - sot54 (to-92) pin symbol description 1 g gate 2 s source 3 d drain caution the device is supplied in an antistatic package. the gate-source input must be protected against static discharge during transport or handling. fig.1 simplified outline and symbol. handbook, halfpage 1 3 2 mam042 s d g quick reference data symbol parameter conditions min. max. unit v ds drain-source voltage (dc) - 25 v i dss drain current v gs = 0; v ds = 8 v bf851a 2 6.5 ma bf851b 6 15 ma bf851c 12 25 ma p tot total power dissipation up to t amb = 40 c - 400 mw ? y fs ? forward transfer admittance v gs = 0; v ds = 8 v bf851a 12 20 ms bf851b 16 25 ms bf851c 20 30 ms c iss input capacitance f = 1 mhz - 10 pf c rss reverse transfer capacitance f = 1 mhz - 3 pf
1995 apr 14 3 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c limiting values in accordance with the absolute maximum rating system (iec 134). note 1. device mounted on an epoxy printed-circuit board; maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm 2 . symbol parameter conditions min. max. unit v ds drain-source voltage (dc) - 25 v v gso gate-source voltage open drain - 25 v v dgo drain-gate voltage (dc) open source - 25 v i g forward gate current (dc) - 10 ma p tot total power dissipation up to t amb = 40 c; note 1 - 400 mw t stg storage temperature - 65 +150 c t j operating junction temperature - 150 c fig.2 power derating curve. mbd478 0 200 400 600 0 50 100 150 p tot (mw) t amb ( c) o
1995 apr 14 4 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c thermal characteristics note 1. device mounted on an epoxy printed-circuit board; maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm 2 . characteristics t j = 25 c; v ds = 8 v; v gs = 0; unless otherwise specified. symbol parameter value unit r th j-a thermal resistance from junction to ambient; note 1 250 k/w symbol parameter conditions min. typ. max. unit v (br)gss gate-source breakdown voltage i g = - 1 m a - 25 - - v v gsoff gate-source cut-off voltage i d = 1 m a bf851a - 0.2 - - 1 v bf851b - 0.5 - - 1.5 v bf851c - 0.8 - - 2 v v gss gate-source forward voltage v ds = 0; i g = 1 ma - - 1 v i dss drain current bf851a 2 - 6.5 ma bf851b 6 - 15 ma bf851c 12 - 25 ma i gss gate cut-off current v gs = - 20 v; v ds = 0 - - - 1 na ? y fs ? forward transfer admittance bf851a 12 - 20 ms bf851b 16 - 25 ms bf851c 20 - 30 ms g os common source output conductance bf851a - - 200 m s bf851b - - 250 m s bf851c - - 300 m s c iss input capacitance f = 1 mhz - - 10 pf c rss reverse transfer capacitance f = 1 mhz - 2.4 3 pf v n / ? b equivalent input noise voltage v gs = 0; f = 1 mhz - 1.5 - nv/ ? hz
1995 apr 14 5 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c fig.3 drain current as a function of gate-source cut-off voltage; typical values. v ds = 8 v. 0 30 20 10 0 0.5 1 2 mbd461 1.5 i dss (ma) v (v) gsoff fig.4 common-source output conductance as a function of drain current; typical values. v ds = 8 v. v gs = 0. handbook, halfpage 0 300 200 100 0 5 25 mbd462 10 15 20 i dss (ma) g os ( m s) fig.5 forward transfer admittance as a function of drain current; typical values. v ds = 8 v. v gs = 0. handbook, halfpage 0 30 20 10 0 5 25 mbd463 10 15 20 i dss (ma) y fs (ms) fig.6 forward transfer admittance as a function of drain current; typical values. v ds = 8 v. handbook, halfpage 0 5 10 20 25 0 20 mbd479 15 15 10 5 d i (ma) bf851c bf851b bf851a y fs (ms)
1995 apr 14 6 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c fig.7 typical input characteristics. bf851a v ds = 8 v. handbook, halfpage 1 0 5 0 1 mbd465 2 3 4 0.8 0.6 0.4 0.2 v (v) gs i d (ma) fig.8 typical output characteristics. bf851a v ds = 8 v. handbook, halfpage 0 10 5 0 1 mbd466 2 3 4 2 4 6 8 v (v) ds i d (ma) v gs = 0 v 100 mv 200 mv 300 mv fig.9 typical input characteristics. bf851b v ds = 8 v. handbook, halfpage 1 0 10 0 2 mbd467 4 6 8 0.8 0.6 0.4 0.2 v (v) gs i d (ma) fig.10 typical output characteristics. bf851b v ds = 8 v. handbook, halfpage 0 10 10 0 2 mbd468 4 6 8 2 4 6 8 v (v) ds i d (ma) v gs = 0 v 100 mv 200 mv 300 mv 400 mv 500 mv
1995 apr 14 7 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c fig.11 typical input characteristics. bf851c v ds = 8 v. handbook, halfpage 2.5 0 20 0 4 mbd469 8 12 16 2 1.5 1 0.5 v (v) gs i d (ma) fig.12 typical output characteristics. bf851c v ds = 8 v. handbook, halfpage 0 10 20 0 4 mbd470 8 12 16 2 4 6 8 v (v) ds i d (ma) v gs = 0 v 400 mv 600 mv 800 mv 200 mv 1 v fig.13 input and reverse transfer capacitance as functions of gate-source voltage; typical values. v ds = 8 v. f = 1 mhz. handbook, halfpage 8 6 4 0 10 0 8 mbd471 2 6 4 2 v (v) gs (pf) rs rs c is c is c ,c fig.14 gate current as a function of drain-gate voltage; typical values. v ds = 8 v. handbook, halfpage 10 2 10 10 3 10 4 10 5 25 0 mbd472 5 10 15 20 10 2 10 1 1 v (v) dg i g (na) 1 ma 0.1 ma i d = 10 ma i gss
1995 apr 14 8 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c fig.15 equivalent input noise as a function of frequency; typical values. v ds = 8 v. v gs = 0. handbook, halfpage 10 3 0 mbd473 10 2 10 1 10 8 2 4 6 10 1 2 f (hz) v / b n (nv/ hz) fig.16 common-source input admittance; typical values. v ds = 8 v. v gs = 0. t amb = 25 c. 10 3 mbd474 10 2 10 10 1 10 2 10 1 f (mhz) g ,b is is (ms) g is b is fig.17 common-source reverse admittance; typical values. v ds = 8 v. v gs = 0. t amb = 25 c. handbook, halfpage mbd475 10 3 10 2 10 10 2 10 2 10 1 f (mhz) g ,b rs rs (ms) 10 1 g rs b rs fig.18 common-source forward transfer admittance; typical values. v ds = 8 v. v gs = 0. t amb = 25 c. handbook, halfpage 10 3 mbd476 10 2 10 1 10 2 10 f (mhz) g ,b fs fs (ms) g fs b fs
1995 apr 14 9 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c fig.19 common-source output admittance; typical values. v ds = 8 v. v gs = 0. t amb = 25 c. 10 3 mbd477 10 2 10 10 1 10 2 10 1 f (mhz) g ,b os os (ms) b os g os
1995 apr 14 10 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c package outline fig.20 sot54 (to-92). dimensions in mm. (1) terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. handbook, full pagewidth mbc014 - 1 2.54 4.8 max 4.2 max 1.6 0.66 0.56 1 2 3 5.2 max 12.7 min 2.0 max (1) 0.48 0.40 0.40 min
1995 apr 14 11 philips semiconductors product speci?cation n-channel junction fets bf851a; bf851b; bf851c definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
internet: http://www.semiconductors.philips.com/ps/ (1) cgy2020g_1.mif june 26, 1996 11:51 am philips semiconductors C a worldwide company ? philips electronics n.v. 1996 sca50 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 83749, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 926 5361, fax. +7 095 564 8323 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - 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