preliminary data sheet FP2250QFN p ackaged l ow n oise , h igh l inearity phemt phone: (408) 988-1845 http:// www.filss.com revised: 10/18/02 fax: (408) 970-9950 email: sales@filss.com ? features ? 29 dbm output power at 1-db compression ? 17 db power gain at 2 ghz ? 1.0 db noise figure at 2 ghz ? 42 dbm output ip3 ? 50% power-added efficiency ? description and applications the FP2250QFN is a high performance, leadle ss, encapsulated packaged aluminum gallium arsenide / indium gallium arsenide (algaa s/ingaas) pseudomorphic high electron mobility transistor (phemt). it utilizes a 0.25 m x 2250 m schottky barrier gate, defined by electron- beam photolithography. the recessed ?mushroom? ga te structure minimizes parasitic gate-source and gate resistance. the epitaxial structure and processing have been optimized for reliable high- power applications. the fp2250?s activ e areas are passivated with si 3 n 4 , and the qfn package is ideal for low-cost, high-performance applications that require a surface -mount package. typical applications include drivers or output stages in pcs/cellular amplifiers, wll and wlan systems, and other types of wireless infr astructure systems up to 10 ghz. ? electrical specifications @ t ambient = 25 c parameter symbol test conditions min typ max units i dss v ds = 2 v; v gs = 0 v 560 635 705 ma saturated drain-source current FP2250QFN-1 FP2250QFN-2 706 770 850 ma power at 1-db compression p-1db v ds = 5 v; i ds = 50% i dss 27 29 dbm power gain at 1-db compression g-1db v ds = 5 v; i ds = 50% i dss 16 17 db power-added efficiency pae v ds = 5 v; i ds = 50% i dss 50 % noise figure nf v ds = 5 v; i ds = 50% i dss 1.0 db output third-order intercept point ip3 v ds = 5v; i ds = 50% i dss 42 dbm maximum drain-source current i max v ds = 2 v; v gs = 1 v 840 ma transconductance g m v ds = 2 v; v gs = 0 v 550 ms gate-source leakage current i gso v gs = -5 v 115 a pinch-off voltage v p v ds = 2 v; i ds = 11 ma -2.0 -0.25 v gate-source breakdown voltage magnitude v bdgs i gs = 11 ma -10 -12 v gate-drain breakdown voltage magnitude v bdgd i gd = 11 ma -10 -12 v all rf data tested at 2.0 ghz
preliminary data sheet FP2250QFN p ackaged l ow n oise , h igh l inearity phemt phone: (408) 988-1845 http:// www.filss.com revised: 10/18/02 fax: (408) 970-9950 email: sales@filss.com ? absolute maximum ratings parameter symbol test conditions min max units drain-source voltage v ds t ambient = 22 3 c 6v gate-source voltage v gs t ambient = 22 3 c -3 v drain-source current i ds t ambient = 22 3 c i dss ma gate current i g t ambient = 22 3 c 15 ma rf input power p in t ambient = 22 3 c 500 mw channel operating temperature t ch t ambient = 22 3 c 175 oc storage temperature t stg ?-65175oc total power dissipation p tot t ambient = 22 3 c 3.75 w notes: ? operating conditions that exceed the absolute maximum ratings could result in permanent damage to the device. ? power dissipation defined as: p tot (p dc + p in ) ? p out , where p dc : dc bias power p in : rf input power p out : rf output power ? absolute maximum power dissipation to be de-rated as follows above 25 c: p tot = 3.75w ? (0.025w/ c) x t pack where t pack = source tab lead temperature . (bottom of the package) ? this phemt is susceptible to damage from electrostatic discharge. proper precau tions should be used when handling these devices. ? pcb pad layout
preliminary data sheet FP2250QFN p ackaged l ow n oise , h igh l inearity phemt phone: (408) 988-1845 http:// www.filss.com revised: 10/18/02 fax: (408) 970-9950 email: sales@filss.com ? package outline mbc ? handling precautions to avoid damage to the devices care should be exercised during hand ling. proper electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. these devices should be treated as class 1a (0-500 v). further information on esd control measures can be found in mil-std-1686 and mil-hdbk-263. ? applications notes & design data applications notes are av ailable from your local filtronic sales representative or directly from the factory. complete design data, including s-parame ters, noise data, and large-signal models are available on the filtronic web site. all information and specifications ar e subject to cha nge without notice.
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