maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source-voltage v gs 8v continuous drain current t a = 25 c i d 2.3 a t j = 150 ct a = 70 c 1.5 pulsed drain current (1) i dm 10 a maximum power dissipation (2) t a = 25 c 1.25 t a = 70 c p d 0.8 w operating junction and storage temperature range t j , t stg 55 to +150 c maximum junction-to-ambient thermal resistance (2) r ja 100 c/w note: (1) pulse width limited by maximum junction temperature. (2) surface mounted on fr4 board, t 5 sec. GF2301 p-channel enhancement-mode mosfet low v gs(th) v ds -20v r ds(on) 0.13 ? i d -2.3a 7/11/01 features advanced trench process technology high density cell design for ultra-low on-resistance popular sot-23 package with copper lead frame for superior thermal and electrical capabilities compact and low profile 2.5v rated mechanical data case: sot-23 plastic package weight: approx. 0.008g marking code: 01 new product to-236ab (sot-23) 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) mounting pad layout t rench g en f et pin configuration 1. gate 2. source 3. drain max. .004 (0.1) 1 2 3 top view .020 (0.51) .015 (0.37) .118 (3.0) .110 (2.8) .055 (1.40) .047 (1.20) .098 (2.5) .091 (2.3) .041 (1.03) .035 (0.89) .041 (1.03) .035 (0.89) .007 (.180) .003 (.085) .020 (0.51) .015 (0.37) .020 (0.51) .015 (0.37) .047 (1.20) .035 (0.90) dimensions in inches and (millimeters)
GF2301 p-channel enhancement-mode mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 20 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 v gate-body leakage i gss v ds = 0v, v gs = 8v 100 na zero gate voltage drain current i dss v ds = 16v, v gs = 0v 1.0 a v ds = 16v, v gs = 0v, t j = 55 c 10 on-state drain current (1) i d(on) v ds 5v, v gs = 4.5v 6 a v ds 5v, v gs = 2.5v 3 drain-source on-state resistance (1) r ds(on) v gs = 4.5v, i d = 2.8a 95 130 m ? v gs = 2.5v, i d = 2.0a 122 190 forward transconductance (1) g fs v ds = 5v, i d = 2.8a 6.5 s dynamic total gate charge q g 5.4 10 gate-source charge q gs v ds = 6v, v gs = 4.5v 0.8 nc gate-drain charge q gd i d = 2.8a 1.1 turn-on delay time t d(on) 525 rise time t r v dd = 6v, r l = 6 ? 19 60 turn-off delay time t d(off) i d 1a, v gen = 4.5v 95 110 ns fall time t f r g = 6 ? 65 80 input capacitance c iss v ds = 6v, v gs = 0v 447 output capacitance c oss f = 1.0mh z 124 pf reverse transfer capacitance c rss 80 source-drain diode maximum diode forward current i s 1.6 a diode forward voltage v sd i s = 1.6a, v gs = 0v 0.8 1.2 v note: (1) pulse test; pulse width 300 s, duty cycle 2% g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
GF2301 p-channel enhancement-mode mosfet 0 2 4 6 10 01 23 4 5 fig. 1 ?output characteristics 0.1 0 0.2 0.4 0.3 02 4 6 8 10 fig. 4 ?on-resistance vs. drain current 0 2 4 8 6 10 0 0.5 1 1.5 2 2.5 3 fig. 2 ?transfer characteristics 8 0.8 0.6 1.2 1.4 1.6 1 fig. 5 ?on-resistance vs. junction temperature v gs = -- 4.5v i d = -- 2.8a --55 c v gs = -- 2.5v -- 2.0v 25 c v gs = -- 4.5v fig. 3 ?threshold voltage vs. temperature -- i d -- drain-to-source current (a) -- v ds -- drain-to-source voltage (v) r ds(on) -- on-resistance ( ? ) -- i d -- drain current (a) -- i d -- drain current (a) -- v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) -- v gs(th) -- gate-to-source threshold voltage (v) t j -- junction temperature ( c) t j = 1 2 5 c -- 50 -- 25 25 50 75 100 125 150 0 -- 50 -- 25 25 50 75 100 125 150 0 0.3 0.2 0.1 0.4 0.5 0.7 0.6 -- 1.5v -- 2.5v v ds = --10v i d = -- 250 a v gs = -- 3.0v, -- 3.5v, -- 4.0v, -- 4.5v, -- 5.0v 0 0.2 0.1 0.3 0.4 12345678 r ds(on) -- on-resistance ( ? ) -- v gs -- gate-to-source voltage (v) i d = -- 2.8a t j = 125 c t j = 25 c fig. 6 ?on-resistance vs. gate-to-source voltage ratings and characteristic curves (t a = 25 c unless otherwise noted)
GF2301 p-channel enhancement-mode mosfet 0 1 2 3 4 5 012 4 3 fig. 7 gate charge 56 v ds = -- 6v i d = -- 2.8a q g -- gate charge (nc) -- v gs -- gate-to-source voltage (v) 1 10 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -- i s -- source current (a) -- v sd -- source-to-drain voltage (v) t j = 150 c 25 c -- 55 c fig. 9 source-drain diode forward voltage v gs = 0 v 0 100 200 600 300 400 500 700 0 5 10 15 20 fig. 8 capacitance c iss c oss c rss c -- capacitance (pf) -- v ds -- drain-to-source voltage (v) f = 1mhz v gs = 0v fig. 12 maximum safe operating area 0.0001 0.001 0.01 0.01 0.001 0.1 0.1 1 1 10 100 -- i d -- drain current (a) -- v ds -- drain-source voltage (v) r ja (norm) -- normalized thermal impedance pulse duration (sec.) single pulse 0.001 0.01 0.1 0 0.01 0.1 0.1 1 1 10 100 10 100 5 10 15 20 1 10 100 fig. 11 power vs. pulse duration power (w) pulse duration (sec.) single pulse r ja = 100 c/w t a = 25 c v gs = --4.5v single pulse r ja = 100 c/w t a = 25 c r ds(on) limit 100 s 1ms 10ms 100ms 1s dc d = 0.5 0.2 0.01 0.1 t 1 t 2 p dm 1. duty cycle, d = t 1 /t 2 2. r ja (t) = r ja(norm) *r ja 3. r ja = 100 c/w 4. t j - t a = p dm * r ja (t) 0.05 0.02 fig. 10 thermal impedance ratings and characteristic curves (t a = 25 c unless otherwise noted)
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