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vishay sfh628a / sfh6286 document number 83722 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179080 1 1 e c a/c c/a 1 2 4 3 pb p b -free e3 optocoupler, phototransistor output, ac input, low input current features ? high common-mode interference immunity isolation test voltage, 5300 v rms low coupling capacitance good ctr linearity depending on forward current low ctr degradation high collector-emitter voltage, v ceo = 55 v lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code j din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications telecom industrial controls battery powered equipment office machines description the sfh628a (dip) and sfh6286 (smd) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. these couplers have a gaas infrared emitting dio de, which is optically cou- pled to a silicon planar ph ototransistor detector, and is incorporated in a plastic dip-4 or smd package. the coupling devices are designed for signal trans- mission between two electrically separated circuits. the couplers are end-stackable with 2.54 mm lead spacing. creepage and clearance distances of > 8.0 mm are achieved with option 6. this version complies with iec 60950 (din vde 0805) for reinforced insulation to an operation voltage of 400 v rms or dc. order information for additional information on t he available options refer to option information. part remarks sfh628a-2 ctr 63 - 200 %, dip-4 sfh628a-3 ctr 100 - 320 %, dip-4 sfh628a-4 ctr 160 - 500 %, dip-4 sfh6286-2 ctr 63 - 200 %, smd-4 sfh6286-3 ctr 100 - 320 %, smd-4 sfh6286-4 ctr 160 - 500 %, smd-4 sfh628a-2x006 ctr 63 - 200 %, dip-4 400 mil (option 6) SFH628A-3X006 ctr 100 - 320 %, dip-4 400 mil (option 6) sfh628a-3x007 ctr 100 - 320 %, smd-4 (option 7) sfh628a-4x006 ctr 160 - 500 %, dip-4 400 mil (option 6)
www.vishay.com 2 document number 83722 rev. 1.5, 26-oct-04 vishay sfh628a / sfh6286 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the devise. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit dc forward current i f 50 ma surge forward current t 10 si fsm 2.5 a parameter test condition symbol value unit collector-emitter voltage v ce 55 v emitter-collector voltage v ec 7.0 v collector current i c 50 ma t p 1.0 ms i c 100 ma power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage between emitter and detector, refer to climate din 40046, part2, nov.74 v iso 5300 v rms creepage distance 7.0 mm clearance 7.0 mm insulation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vdeo 303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to +150 c ambient temperature range t amb - 55 to +100 c junction temperature t j 100 c soldering temperature max. 10 s. dip soldering distance to seating plane 1.5 mm t sld 260 c vishay sfh628a / sfh6286 document number 83722 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 5.0 ma v f 1.1 1.5 v capacitance v r = 0 v, f = 1.0 mhz c o 45 pf thermal resistance r thja 1070 k/w parameter test condition symbol min ty p. max unit collector-emitter leakage current v ce = 10 v i ceo 10 200 na collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 7pf thermal resistance r thja 500 k/w parameter test condition part symbol min ty p. max unit collector-emitter saturation voltage i f = 1.0 ma, i c = 0.5 ma sfh628a-2 sfh6286-2 v cesat 0.25 0.4 v i f = 1.0 ma, i c = 0.8 ma sfh628a-3 sfh6286-3 v cesat 0.25 0.4 v i f = 1.0 ma, i c = 1.25 ma sfh628a-4 sfh6286-4 v cesat 0.25 0.4 v parameter test condition part symbol min ty p. max unit i c /i f i f = 1.0 ma, v ce = 0.5 v sfh628a-2 sfh6286-2 ctr 63 200 % i f = 0.5 ma, v ce = 1.5 v sfh628a-2 sfh6286-2 ctr 32 100 % i f = 1.0 ma, v ce = 0.5 v sfh628a-3 sfh6286-3 ctr 100 320 % i f = 0.5 ma, v ce = 1.5 v sfh628a-3 sfh6286-3 ctr 50 160 % i f = 1.0 ma, v ce = 0.5 v sfh628a-4 sfh6286-4 ctr 160 500 % i f = 0.5 ma, v ce = 1.5 v sfh628a-4 sfh6286-4 ctr 80 250 % www.vishay.com 4 document number 83722 rev. 1.5, 26-oct-04 vishay sfh628a / sfh6286 vishay semiconductors switching characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter te s t c o n d i t i o n symbol min ty p. max unit turn-on time v cc = 5.0 v, i c = 2.0 ma, r l = 100 ? t on 6.0 s rise time v cc = 5.0 v, i c = 2.0 ma, r l = 100 ? t r 3.5 s turn-off time v cc = 5.0 v, i c = 2.0 ma, r l = 100 ? t off 5.5 s fall time v cc = 5.0 v, i c = 2.0 ma, r l = 100 ? t f 5.0 s figure 1. test circuit isfh618a_11 i f 47 ? r l i c v cc fiure 2.testcircuitandaeforms isfh618a_12 10% 90% input pulse output pulse t r t on t f t off fiure 3.currenttransferratio(typ.) isfh618a_01 v ce = 0.5 v, c tr =f(t a ) fiure 4.currenttransferratio(typ.) isfh618a_01 v ce = 0.5 v, c tr =f(t a ) isfh618a_02 vishay sfh628a / sfh6286 document number 83722 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 5. diode forward voltage (typ.) figure 6. diode forward voltage (typ.) figure 7. transistor capacitance isfh618a_03 t a = 25c, v f =f(i f ) isfh618a_04 i f = 1.0 ma, v f =f(t a ) isfh618a_05 t a = 25c, f = 1.0 mhz, c ee =f(v ce ) fiure 8.outputcharacteristics fiure 9.permissileforardcurrentdiode fiure 10.permissilepoerdissipation t a = 25c, c e =f (v ce ,i f ) isfh618a_06 isfh618a_07 i f =f(t a ) isfh618a_08 p tot =f(t a ) www.vishay.com 6 document number 83722 rev. 1.5, 26-oct-04 vishay sfh628a / sfh6286 vishay semiconductors package dimensions in inches (mm) isfh618a_09 t a = 25c, i f = 1.0 ma, v cc = 5.0 v, t on ,t r , t off ,t f ,=f(r l ) figure 11. switching times (typ.) i178027 .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. .100 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) iso method a vishay sfh628a / sfh6286 document number 83722 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) i178029 .255 (6.48) .268 (6.81) 34 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. 1.00 (2.54) typ. .130 (3.30) .150 (3.81) .0098 (.249) .035 (.102) .020 (.508) .040 (1.02) .031 (.79) typ. .050 (1.27) typ. .010 (.25) typ. 10 3C7 .375 (9.52) .305 (10.03) .296 (7.52) .312 (7.90) .315 (8.00) min. lead coplanarity .004 max. smd iso method a .100 (2.54) r .010 (.25) .070 (1.78) .030 (.76) .315 (8.00) mi n .060 (1.52) .435 (11.05) .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18487 www.vishay.com 8 document number 83722 rev. 1.5, 26-oct-04 vishay sfh628a / sfh6286 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423 |
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