new product sma6j5.0a thru sma6j28a vishay general semiconductor document number: 89115 revision: 30-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount transient voltage suppressors features ? low profile package ? ideal for automated placement ? available in uni-directional polarity only ? excellent clamping capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics v wm 5.0 v to 28 v p ppm (10 x 1000 s) 600 w p ppm (8 x 20 s) 4000 w p d at t a = 50 c 4 w i fsm 50 a t j max. 150 c do-214ac (sma) notes: (1) non-repetitive current pulse, per fig. 1 and derated above t a = 25 c per fig. 2. (2) mounted on p.c.b. with 5.0 x 5.0 mm copper pads attached to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipation with 10/1000 s waveform (1)(2) with 8/20 s waveform p ppm 600 4000 w peak pulse current with 10/1000 s waveform (1)(2) with 8/20 s waveform i ppm see next table a power dissipation on in finite heatsink, t a = 50 c p d 4.0 w peak forward surge current 8.3 ms single half sine-wave i fsm 50 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
new product sma6j5.0a thru sma6j28a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89115 revision: 30-oct-08 2 notes: (1) pulse test: t p 50 ms (2) to calculate maximum clamping voltage at other surge currents, use the following formula v clmax. = r d x i pp + v brmax. (3) to calculate v br vs. junction temperature, use the following formula v br at t j = v br at 25 c x (1 + t x (t j - 25)) (4) v f = 3.5 v at i f = 25 a, pulse test: 300 s pulse width electrical characteristics symbol parameter v wm stand-off voltage v br breakdown voltage v c clamping voltage i d leakage current at v wm i pp peak pulse current t voltage temperature coefficient v f forward voltage drop r d dynamic resistance v br v c v w m i pp i d i t v f i f v i electrical characteristics (t a = 25 c unless otherwise noted) device device marking code breakdown voltage v br at i t (1) maximum reverse leakage i d at v wm v c at i pp r d (2) v c at i pp r d (2) t (3) 10/1000 s 8/20 s min. max. 25 c 85 c max. max. max. v ma a v v a v a 10 -4 /c sma6j5.0a 6ae 6.40 7.07 10 150 375 5.0 9.1 65.9 0.031 13.4 298 0.021 5.7 sma6j6.0a 6ag 6.70 7.41 10 600 1500 6.0 9.5 63.2 0.033 13.7 290 0.022 5.9 sma6j6.5a 6ak 7.20 7.96 10 100 250 6.5 10.2 58.8 0.038 14.5 276 0.024 6.1 sma6j7.5a 6ap 8.33 9.21 1 50 125 7.5 11.8 50.8 0.051 17.0 235 0.033 6.5 sma6j8.0a 6ar 8.89 9.83 1 20 50 8.0 12.5 48.0 0.056 18.2 220 0.038 7.0 sma6j8.5a 6at 9.4 10.4 1 20 50 8.5 13.3 45.1 0.064 18.7 205 0.040 7.3 sma6j10a 6ax 11.1 12.3 1 0.2 1 10 15.7 38.2 0.089 19.6 184 0.040 7.8 sma6j11a 6az 12.2 13.5 1 0.2 1 11 17.2 34.8 0.107 21.5 172 0.047 8.1 sma6j12a 6be 13.3 14.7 1 0.2 1 12 18.8 31.9 0.128 23.5 157 0.056 8.3 sma6j13a 6bg 14.4 15.9 1 0.2 1 13 20.4 29.4 0.153 23.9 147 0.054 8.4 sma6j15a 6bm 16.7 18.5 1 0.2 1 15 23.6 25.4 0.201 27.7 123 0.075 8.8 sma6j16a 6bp 17.8 19.7 1 0.2 1 16 25.2 23.8 0.229 29.5 119 0.083 8.8 sma6j17a 6br 18.9 20.9 1 0.2 1 17 26.7 22.5 0.259 31.4 111 0.094 9.0 sma6j18a 6bt 20.0 22.1 1 0.2 1 18 28.3 21.2 0.292 33.2 102 0.109 9.2 sma6j20a 6bv 22.2 24.5 1 0.2 1 20 31.4 19.1 0.361 36.8 93 0.132 9.4 sma6j22a 6bx 24.4 26.9 1 0.2 1 22 34.5 17.4 0.437 40.4 89 0.152 9.5 sma6j24a 6bz 26.7 29.5 1 0.2 1 24 37.8 15.9 0.523 44.3 80 0.185 9.6 sma6j26a 6ce 28.9 31.9 1 0.2 1 26 40.9 14.7 0.614 47.9 75 0.213 9.7 sma6j28a 6cg 31.1 34.4 1 0.2 1 28 44.0 13.6 0.704 51.6 68 0.253 9.8
new product sma6j5.0a thru sma6j28a vishay general semiconductor document number: 89115 revision: 30-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 note: (1) mounted on minimum recommended pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient (1) r ja 120 c/w typical thermal resistance, junction to lead r jl 25 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode sma6j5.0a-e3/61 0.064 61 1800 7" diameter plastic tape and reel sma6j5.0a-e3/5a 0.064 5a 7500 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature p u lse w idth ( s) - ? i pp exponential w a v eform 100 1 0.1 0.1 10 10 000 p ppm - peak p u lse po w er (k w ) 10 1 100 1000 t j - initial temperat u re 100 50 0 075 200 peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage (%) 75 25 100 150 25 50 125 175 figure 3. pulse waveform figure 4. typical junction capacitance t - time (ms) 150 50 0 0 2.0 4.0 i ppm - peak p u lse c u rrent (%) i rsm 100 1.0 3.0 peak v al u e i ppm half v al u e - i ppm i pp 2 t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm t d t r = 10 s t r = 8 s t d = 1000 s t d = 20 s re v erse v oltage ( v ) 10 000 100 10 110100 c j - j u nction capacitance (pf) 1000 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at stand-off v oltage v w m meas u red at zero bias
new product sma6j5.0a thru sma6j28a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89115 revision: 30-oct-08 4 package outline dimensions in inches (millimeters) figure 5. typical forw ard characteristics re v erse v oltage ( v ) 100 1 0.01 0.4 0.5 1.5 c j - j u nction capacitance (pf) 10 sma6j5.0a ~ sma6j 8 .0a t a = 150 c 0.1 1.4 1.3 1.2 1.1 1.0 0.9 0. 8 0.7 0.6 sma6j5.0a ~ sma6j2 8 a t a = 25 c sma6j 8 .5a ~ sma6j2 8 a t a = 150 c figure 6. typical transi ent thermal impedance t - p u lse d u ration (s) 1000 10 0.1 0.001 0.01 1000 transient thermal impedance (c/ w ) 100 1 100 10 1 0.1 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n .
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