siemens pnp silicon darlington transistors bc 876 0 l 0 0 high current gain high collector current low collector-emitter saturation vottage complementary types: bc 875, bc 877, bc 879 (npn) . . . bc 880 1 type marking ordering code pin configuration packagel) 1 2 3 bc876 -? c62702-c943 e c b to-92 bc 878 c62702-c942 bc880 . c62702-c941 maximum ratings parameter collector-emitter voltage collector-base voltage emitter-base voltage symbol values unit bc 876 bc 878 bc 880 vcm 45 60 80 v vcrm 60 80 100 veb0 5 collector current ic 1 a peak collector current ichl 2 base current ie 100 ma? peak base current ibm 200 total power dissipation. t c = 99 % 2) p l~( 0.8 (1) w junction temperature ti 150 % storage temperature range tstp -65 . . . + 150 thermal resistance junction - ambientz) rthja <156 klw junction - case 3) r?x s75 1) for detailed information sec chapter package outtines. 2) if transistors wftf-~ max. 4 mm lead fangth are fixad on pcbs with a min. 10 mm x 10 mm larga coppar area for the collector terminal, rnu = 125 kav and thus p ioimx = 1 w at t a = 25 ?c. 3) mounted on al heat sink 15 mm x 25 mm x 0.5 mm. 387
bc 876 . . . bc 880 electrical characteristics at t a = 25 %, uhless otherwise specified. parameter _ dc characteristics symbol values unit min. typ. max. collector-emitter breakdown voltage ic = 50 ma bc 876 bc 878 bc 880 collector-base breakdown voltage ic= 1oofl bc 876 bc 878 bc 880 v(br)ceo v(br,cbo 1 emitter-base breakdown voltage, i e = 100 fl collector cutoff current vce = 0.5 x vcpmax v(br)ebo iceo collector cutoff current vcb = vcbmax icbo v cb = vc~ma~, t a = 150 ?c enlitter cutoff current, v eb = 4 v dc current gain ic=150ma;vc~=lov1) ~c=500ma;ke=lov1) im0 hm collector-emitter saturation voltage 1) ic = 500 ma, ib = 0.5 ma ~c=1oooitla,/e=1 ma vcesal base-emitter saturation voltage 1) ic = 1000 ma: ia = 1 ma vbesat 45 60 80 60 80 100 5 v na fl na ac characteristics - 1. ! transition frequency ft 150 mhz .; .., 1 ic = 200 ma, v ce = 5 v, f = 20 mhz ._.1 ?) pulse test: i d 300 ps. d s 2 %. siemens aktiengesellschaft 388
bc 876 . . . bc 880 total power disslpation pin =f(g; tc) 900 mw 600 500 400 300 200 100 0 0 50 100 'c 150 - r,;r, - ta permissible pulse load rina = f pp) dc current gain ~fe =~(ta) ?vw collector cutoff current ks0 = f (t a ) kb=loov vce= 1ov 10-2 10-'10-5 10-4 10-3 10-'io-' 5 10' 0 bc 876...880 ewoo2j6 0 50 100 'c 150 - ta -f siemens aktiengesellschaft 389
bc 876 . . . bc 880 dc current gain k =f(lc) .-lo' 102 10? ma 104 -4 collector-emitter saturation voltage vcesal - f (ic) parameter = f e, t a = 25 % 10? nc 676...666 fl!?oa259 ma .._. tiri?w transition frequency fr =f(k) vce = 5 v, f= 20 mhz 10' i i iiiiiiii i iiiiiij '-10' 102 ma 10' -4 basesmitter saturation voltage vbesal =f(h) parameter = h. t a = 25 % 4 t
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