april 2009 ?2009 fairchild semiconductor corporation FDS8840NZ rev.c1 www.fairchildsemi.com 1 FDS8840NZ n-channel power trench ? mosfet so-8 d d d d s s s g pin 1 g s s s d d d d FDS8840NZ n-channel powertrench ? mosfet 40 v, 18.6 a, 4.5 m ? features ? max r ds(on) = 4.5 m ? at v gs = 10 v, i d = 18.6 a ? max r ds(on) = 6.0 m ? at v gs = 4.5 v, i d = 14.9 a ? hbm esd protection level of 6 kv typical(note 3) ? high performance trench technology for extremely low r ds(on) and fast switching ? high power and current handling capability ? termination is lead-free and rohs compliant general description the FDS8840NZ has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excell ent switching performance. applications ? synchronous buck for vcore and server ? notebook battery pack ? load switch mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current -continuous 18.6 a -pulsed 63 e as single pulse avalanche energy (note 4) 600 mj p d power dissipation t a = 25 c (note 1a) 2.5 w power dissipation t a = 25 c (note 1b) 1.0 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 25 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDS8840NZ FDS8840NZ so8 13 ?? 12 mm 2500 units
FDS8840NZ n-channel power trench ? mosfet www.fairchildsemi.com 2 ?2009 fairchild semiconductor corporation FDS8840NZ rev.c1 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 40 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 31 mv/c i dss zero gate voltage drain current v ds = 32 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.8 3.0 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 18.6 a 3.9 4.5 m ? v gs = 4.5 v, i d = 14.9 a 4.6 6.0 v gs = 10 v, i d = 18.6 a, t j =125 c 5.9 7.0 g fs forward transconductance v ds = 5 v, i d = 18.6 a 83 s c iss input capacitance v ds = 20 v, v gs = 0 v, f = 1 mhz 5665 7535 pf c oss output capacitance 650 865 pf c rss reverse transfer capacitance 445 670 pf r g gate resistance 1.2 ? t d(on) turn-on delay time v dd = 20 v, i d = 18.6 a, v gs = 10 v, r gen = 6 ? 18 32 ns t r rise time 13 23 ns t d(off) turn-off delay time 57 103 ns t f fall time 11 20 ns q g total gate charge v gs = 0 v to 10 v v dd = 20 v, i d = 18.6 a 103 144 nc q g total gate charge v gs = 0 v to 5 v 54 76 nc q gs gate to source charge 16 nc q gd gate to drain ?miller? charge 19 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 18.6 a 0.8 1.2 v v gs = 0 v, i s = 2.1 a 0.7 1.2 t rr reverse recovery time i f = 18.6 a, di/dt = 100 a/ s 33 53 ns q rr reverse recovery charge 21 34 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. the diode connected between the gate and source servers only as protection against esd. no gate overvoltage rating is implie d. 4. starting t j = 25 c, l = 3 mh, i as = 20 a, v dd = 40 v, v gs = 10 v. a) 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b) 125 c/w when mounted on a minimum pad.
FDS8840NZ n-channel power trench ? mosfet www.fairchildsemi.com 3 ?2009 fairchild semiconductor corporation FDS8840NZ rev.c1 typical characteristics t j = 25 c unless otherwise noted figure 1. 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 v gs = 4.5 v v gs = 10 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 3.5 v v gs = 3 v v gs = 4 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 102030405060 0 1 2 3 4 5 v gs = 4 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 4.5 v v gs = 3.5 v v gs = 3 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 18.6 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 3 6 9 12 i d = 18.6 a t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 01234 0 10 20 30 40 50 60 v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDS8840NZ n-channel power trench ? mosfet www.fairchildsemi.com 4 ?2009 fairchild semiconductor corporation FDS8840NZ rev.c1 figure 7. 0306090120 0 2 4 6 8 10 q g , gate charge (nc) v gs , gate to source voltage (v) i d = 18.6 a v dd = 20 v v dd = 15 v v dd = 25 v gate charge characteristics figure 8. 0.1 1 10 40 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1000 1 t j = 100 o c t j = 125 o c 10 t j = 25 o c t av , time in avalanche (ms) i as , avalanche current (a) 30 u n c l a m p e d i n d u c t i v e switching capability figure 10. igss vs vgs 0 5 10 15 20 25 30 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 v gs = 0 v t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) i g , gate leakage current (a) f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 10 ms dc 10 s 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m power dissipation 10 -3 10 -2 10 -1 110 100 1000 0.3 1 10 100 1000 2000 single pulse r t ja = 125 o c/w t a = 25 o c v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDS8840NZ n-channel power trench ? mosfet www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation FDS8840NZ rev.c1 figure 13. 10 -3 10 -2 10 -1 110 100 1000 0.0003 0.001 0.01 0.1 1 2 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t j a a a
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