ECH8102 no. a1420-1/5 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. applications ? high-power igbt / mosfet gate drivers, dc / dc converters, lamp drivers, motor drivers. features ? adoption of fbet, mbit process. ? high current capacitance. ? low collector-to-emitter saturation voltage. ? high speed switching. ? high allowable power dissipation. ? halogen free compliance. ? ieco is guaranteed for preventing reverse ow from the collector to the emitter. speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo -30 v collector-to-emitter voltage v ces -30 v collector-to-emitter voltage v ceo -30 v emitter-to-base voltage v ebo -6 v collector current i c -12 a collector current (pulse) i cp -24 a base current i b -1.2 a collector dissipation p c when mounted on ceramic substrate (900mm 2 0.8mm) 1.6 w junction temperature tj 150 c storage temperature tstg -55 to +150 c marking : gb ordering number : ena1420 d0209ea tk im tc-00002127 sanyo semiconductors data sheet ECH8102 pnp epitaxial planar silicon transistor high-current switching applications www.semiconductor-sanyo.com/network
ECH8102 no. a1420-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb = -30v, i e =0a -0.1 a emitter cutoff current i ebo v eb = -4v, i c =0a -0.1 a emitter cutoff current i eco v ec = -4.5v, i c =0a -1 a dc current gain h fe 1v ce = -2v, i c = -500ma 200 560 h fe 2v ce = -2v, i c = -4a 150 h fe 3v ce = -2v, i c = -10a 100 gain-bandwidth product f t v ce = -10v, i c = -500ma 140 mhz output capacitance cob v cb = -10v, f=1mhz 120 pf collector-to-emitter saturation voltage v ce (sat)1 i c = -6a, i b = -300ma -80 -135 mv v ce (sat)2 i c = -2a, i b = -40ma -50 -85 mv base-to-emitter saturation voltage v be (sat) i c = -2a, i b = -40ma -0.85 -1.2 v collector-to-base breakdown voltage v (br)cbo i c = -10 a, i e =0a -30 v collector-to-emitter breakdown voltage v (br)ces i c = -100 a, r be =0 -30 v v (br)ceo i c = -1ma, r be = -30 v emitter-to-base breakdown voltage v (br)ebo i e = -10 a, i c =0a -6 v turn-on time t on see speci ed test circuit. 91 ns storage time t stg see speci ed test circuit. 125 ns fall time t f see speci ed test circuit. 17 ns package dimensions electrical connection unit : mm (typ) 7011a-005 8765 1234 1 : emitter 2 : emitter 3 : emitter 4 : base 5 : collector 6 : collector 7 : collector 8 : collector top view 1 : emitter 2 : emitter 3 : emitter 4 : base 5 : collector 6 : collector 7 : collector 8 : collector sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view
ECH8102 no. a1420-3/5 switching time test circuit v r r b v cc = --12v v be =5v + + 50 input v out r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c = --50i b1 =25i b2 = --5a v ce = --2v ta=75 c 25 c --25 c --12 -- 6 -- 8 --10 -- 2 -- 4 0 0 --0.2 --0.4 --0.6 --0.8 --1. 2 --1.0 it14433 it14435 5 23 57 23 57 --0.01 --1.0 23 57 --10 --0.1 100 10 3 2 5 7 3 2 v ce = --10v it14436 100 7 5 3 2 7 5 23 57 --1.0 --10 23 5 it14437 f=1mhz i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v h fe -- i c dc current gain, h fe collector current, i c -- a h fe -- i c dc current gain, h fe collector current, i c -- a f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a ta=75 c --25 c v ce = --0.5v it14434 100 10 1000 7 2 5 3 7 2 5 3 7 --0.01 3 25 2 --0.1 7 323 5 --1.0 27 35 --10 25 c ta=75 c --25 c v ce = --2v 100 10 1000 7 2 5 3 7 2 5 3 7 --0.01 3 25 2 --0.1 7 323 5 --1.0 27 35 --10 25 c --100ma --10 -- 6 -- 8 -- 2 -- 1 -- 4 -- 7 -- 9 -- 3 -- 5 0 0 --0.8 --1.6 --1.8 --2.0 --0.4 --1.2 --0.6 --1.4 --0.2 --1.0 i b =0ma it14456 --5ma --10ma --90ma --80ma --15ma --20ma --25ma --30ma --35ma --40ma --45ma --70ma --60ma --50ma
ECH8102 no. a1420-4/5 --0.1 7 5 3 2 7 5 3 2 7 5 3 2 5 3 2 --1.0 --10 --0.01 --0.01 --0.1 25 35 72 --1.0 5 37 2 --10 5 37 23 i c = --12a 10ms 1ms 100ms dc operation (ta=25 c) i cp = --24a 10 s it14442 --1.0 3 --0.1 ta= --25 c 75 c 3 2 7 5 2 23 57 23 57 23 57 --1.0 --10 23 --0.01 i c / i b =50 it14441 25 c 100 s 500 s 0 1.8 1.6 1.0 1.2 1.4 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 it14443 base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c collector current, i c -- a a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c when mounted on ceramic substrate (900mm 2 0.8mm) ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 75 c ta= -- 25 c 25 c 75 c ta= --25 c 25 c --0.1 2 3 57 2 3 57 2 3 57 --1.0 --10 23 --0.01 --100 7 5 3 3 2 2 --10 7 5 ta=75 c 25 c --25 c it14440 i c / i b =50 --0.1 23 57 23 57 23 57 --1.0 --10 23 --0.01 --100 7 5 3 3 2 2 --10 7 5 3 2 ta=75 c 25 c --25 c it14439 i c / i b =20 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a --0.1 2 3 57 2 3 57 2 3 57 --1.0 --10 23 --0.01 --100 7 5 3 3 2 2 --10 7 5 3 2 --1.0 ta=75 c 75 c ta= --25 c 25 c 25 c --25 c it14438 i c / i b =10 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a
ECH8102 no. a1420-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of december, 2009. speci cations and information herein are subject to change without notice.
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