? 2006 ixys all rights reserved 1 - 4 ixdr 35n60 bd1 0644 ixys reserves the right to change limits, test conditions and dimensions symbol conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c; r ge = 20 k 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 38 a i c90 t c = 90c 24 a i cm t c = 90c, t p =1 ms 48 a rbsoa v ge = 15 v, t j = 125c, r g = 10 i cm = 110 a clamped inductive load, l = 30 h v cek < v ces t sc v ge = 15 v, v ce = 600 v, t j = 125c 10 s (scsoa) r g = 10 , non repetitive p c t c = 25c igbt 125 w diode 50 w t j -55 ... +150 c t stg -55 ... +150 c v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force w ith clip 20...120 n weight typical 6 g v ces = 600 v i c25 =38a v ce(sat) typ = 2.2 v features npt igbt technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling mos input, voltage controlled optional ultra fast diode epoxy meets ul 94v-0 isolated and ul registered e153432 advantages dcb isolated mounting tab meets to-247ad package outline package for clip or spring mounting space savings high power density typical applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies igbt with optional diode high speed, low saturation voltage symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v (br)ces v ge = 0 v 600 v v ge(th) i c = 0.7 ma, v ce = v ge 35v i ces v ce = v ces t j = 25c 0.1 ma t j = 125c 1 ma i ges v ce = 0 v, v ge = 20 v 500 na v ce(sat) i c = 35 a, v ge = 15 v 2.2 2.7 v g c e isoplus 247 tm g e c g = gate, e = emitter c = collector , tab = collector isolated back surface
? 2006 ixys all rights reserved 2 - 4 ixdr 35n60 bd1 0644 ixys reserves the right to change limits, test conditions and dimensions symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. c ies 1600 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 150 pf c res 90 pf q g i c = 35 a, v ge = 15 v, v ce = 480v 140 nc t d(on) 30 ns t r 45 ns t d(off) 320 ns t f 70 ns e on 1.6 mj e off 0.8 mj r thjc 1 k/w r thch package with heatsink compound 0.25 k/w inductive load, t j = 125c i c = 35 a, v ge = 15 v, v ce = 300 v, r g = 10 reverse diode (fred) [d1 version only] characteristic values (t j = 25c, unless otherwise specified) symbol conditions min. typ. max. v f i f = 35 a, v ge = 0 v 2.1 2.3 v i f = 35 a, v ge = 0 v, t j = 125c 1.6 v i f t c = 25c 35 a t c = 90c 18 a i rm i f = 15 a, -di f /dt = 400 a/s, v r = 300 v 13 a t rr v ge = 0 v, t j = 125c 90 ns t rr i f = 1 a, -di f /dt = 100 a/s, v r = 30 v, v ge = 0 v 40 ns r thjc 2.3 k/w isoplus247 tm outline the convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side this drawing will meet all dimensions requirement of jedec outline to-247 ad except screw hole and except lmax.
? 2006 ixys all rights reserved 3 - 4 ixdr 35n60 bd1 0644 ixys reserves the right to change limits, test conditions and dimensions 01234567 0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 0 5 10 15 20 25 30 0 40 80 120 0123 0 10 20 30 40 50 60 70 80 0 20406080100120 0 3 6 9 12 15 01234567 0 10 20 30 40 50 60 70 80 t j = 25c t j = 125c v ce = 480v i c = 30a 345678910 0 10 20 30 40 50 60 70 80 v ce = 20v v ce v a i c v ce a i c v v v v ge v f a i c i f nc q g -di/dt v v ge i rm t rr ns a/ s ixdx35n60b t j = 125c v r = 300v i f = 15a t j = 25c t j = 125c i rm t rr t j = 25c t j = 125c 9v 11v v ge = 17v 15v 13v 9v 11v v ge = 17v 15v 13v a a fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode
? 2006 ixys all rights reserved 4 - 4 ixdr 35n60 bd1 0644 ixys reserves the right to change limits, test conditions and dimensions fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and sw itching fig.10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse biased safe operating area fig. 12 typ. transient thermal impedance rbsoa 10 20 30 40 50 60 0 1 2 3 4 0 20 40 60 80 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 0 100 200 300 400 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.0001 0.001 0.01 0.1 1 10 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 0 15 30 45 60 single pulse v ce = 300v v ge = 15v r g = 10 t j = 125c ixdr30n60bd1 v ce = 300v v ge = 15v i c = 35a t j = 125c 0 100 200 300 400 500 600 700 0 20 40 60 80 100 120 r g = 10 t j = 125c v ce = 300v v ge = 15v r g = 10 t j = 125c e on v ce = 300v v ge = 15v i c = 35a t j = 125c t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t r g r g v ce t s mj e on mj e off ns t ns t i cm k/w z thjc igbt diode v a mj ns ns mj
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