BAT63-07W jul-06-2001 1 silicon schottky diode low barrier diode for detectors up to ghz frequencies for high-speed switching applications zero bias detector diode vps05605 4 2 1 3 32 eha07008 1 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BAT63-07W 63s 1=c1 2=c2 3=a2 4=a1 sot343 maximum ratings parameter symbol value unit diode reverse voltage v r 3 v forward current i f 100 ma total power dissipation , t s = 103 c p tot 100 mw junction temperature t j 150 c storage temperature t st g -55 ... 150 thermal resistance junction - soldering point 1) r thjs 470 k/w 1 for calculation of r thja please refer to application note thermal resistance
BAT63-07W jul-06-2001 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 3 v i r - - 10 a forward voltage i f = 1 ma v f - 190 300 mv ac characteristics diode capacitance v r = 0.2 v, f = 1 mhz c t 0.85 pf 0.65 - case capacitance f = 1 mhz - c c - 0.1 differential resistance v r = 0 v, f = 10 khz r 0 - 30 k - l s - 1.6 - nh series inductance
BAT63-07W jul-06-2001 3 forward current i f = f ( v f ) t a = parameter 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1.0 v f -4 10 -3 10 -2 10 -1 10 a i f ta=125c ta=85c ta=25c ta=-40c forward current i f = f ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 c t p 1 10 2 10 3 10 ma r thjs d = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissiple pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 c t p 0 10 1 10 ma i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
BAT63-07W jul-06-2001 4 diode capacitance c t = f ( v r ) f = 1mhz 0.0 0.5 1.0 1.5 2.0 v 3.0 v r 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pf 1.0 c t rectifier voltage v out = f ( v in ) f = 900 mhz r l = parameter in k 10 -1 10 0 10 1 10 2 10 3 mv v in -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 mv v out rl=500k 200k 100k 50k 20k testcircuit: d.u.t r in r l c l 1nf 50 ? v i v 0
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