document number: 94073 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 06-aug-08 1 hexfred ? ultrafast soft recovery diode, 2 x 16 a hfa32pa120cpbf vishay high power products features ? ultrafast recovery ? ultrasoft recovery ? very low i rrm ? very low q rr ? specified at operating conditions ? lead (pb)-free ? designed and qualified for industrial level benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description hfa32pa120c is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it feat ures a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 1200 v and 16 a per leg continuous current, the hfa32pa120c is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to ?snap-off? during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexfred hfa32pa120c is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary v r per leg 1200 v v f at 16 a at 25 c 3.0 v i f(av) 2 x 16 a t rr (typical) per leg 30 ns t j (maximum) 150 c q rr (typical) per leg 260 nc i rrm (typical) per leg 5.8 a to-247ac base common cathode common cathode 2 2 13 anode 1 anode 2 a v aila b le p b -free rohs* compliant absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current per leg i f t c = 100 c 16 a per device 32 single pulse forward current i fsm 190 maximum repetitive forward current i frm 64 maximum power dissipation p d t c = 25 c 151 c t c = 100 c 60 operating junction and storage temperature range t j , t stg - 55 to + 150 w * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94073 2 revision: 06-aug-08 hfa32pa120cpbf vishay high power products hexfred ? ultrafast soft recovery diode, 2 x 16 a electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 16 a see fig. 1 -2.53.0 i f = 32 a - 3.2 3.93 i f = 16 a, t j = 125 c - 2.3 2.7 maximum reverse leakage current i rm v r = v r rated see fig. 2 -0.7520 a t j = 125 c, v r = 0.8 x v r rated - 375 2000 junction capacitance c t v r = 200 v see fig. 3 - 27 40 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics per leg (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 30 - ns t rr1 t j = 25 c i f = 16 a di f /dt = 200 a/s v r = 200 v - 90 135 t rr2 t j = 125 c - 164 245 peak recovery current see fig. 6 i rrm1 t j = 25 c - 5.8 10 a i rrm2 t j = 125 c - 8.3 15 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 260 675 nc q rr2 t j = 125 c - 680 1838 peak rate of fall of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 120 - a/s di (rec)m /dt2 t j = 125 c - 76 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc - - 0.83 k/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.50 - weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to -247ac (jedec) hfa32pa120c
document number: 94073 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 06-aug-08 3 hfa32pa120cpbf hexfred ? ultrafast soft recovery diode, 2 x 16 a vishay high power products fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 0.1 1 10 100 0246 8 t = 150c t = 125c t = 25c j j j fm forward voltag e drop - v (v) 0.01 0.1 1 10 100 1000 0 200 400 600 8 00 1000 1200 t = 150 c a t = 125 c t = 25 c j j j 1 10 100 1000 1 10 100 1000 10000 t = 25 c j a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 2 t 1 t p dm j notes: 1. duty factor d = t1/ t 2 2. peak t = pdm x zthjc + tc
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94073 4 revision: 06-aug-08 hfa32pa120cpbf vishay high power products hexfred ? ultrafast soft recovery diode, 2 x 16 a fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) 20 70 120 170 220 270 100 1000 r j j v = 200 v t = 125 c t = 25 c if = 16 a if = 8 a 0 5 10 15 20 25 30 100 1000 if = 16 a if = 8 a r j j v = 200 v t = 125 c t = 25 c di f 0 200 400 600 8 00 1000 1200 1400 1600 100 1000 if = 16a if = 8 a v = 200 v t = 125 c t = 25 c r j j 10 100 1000 10000 100 1000 v = 200 v t = 125 c t = 25 c r j j if = 16a if = 8 a
document number: 94073 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 06-aug-08 5 hfa32pa120cpbf hexfred ? ultrafast soft recovery diode, 2 x 16 a vishay high power products fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adj u st q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of c u rrent thro u gh zero crossing (2) i rrm - peak re v erse reco v ery c u rrent (3) t rr - re v erse reco v ery time meas u red from zero crossing point of negati v e going i f to point w here a line passing thro u gh 0.75 i rrm and 0.50 i rrm extrapolated to zero c u rrent. (4) q rr - area u nder c u r v e defined b y t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of c u rrent d u ring t b portion of t rr
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94073 6 revision: 06-aug-08 hfa32pa120cpbf vishay high power products hexfred ? ultrafast soft recovery diode, 2 x 16 a ordering information table 1 3 4 5 2 3 4 5 6 - hexfred ? family - process designator: a = subs. electron irradiated b = subs. platinum - current rating (32 = 32 a) - package outline (pa = to-247, 3 pins) - voltage rating (120 = 1200 v) - configuration (c = center tap common cathode) device code 5 13 24 67 hf a 32 pa 120 c pbf 7 - none = standard production pbf = lead (pb)-free links to related documents dimensions http://www.vishay.com/doc?95223 part marking information http://www.vishay.com/doc?95226
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