semihow rev.a0,mar 2010 HFH7N80 3 2 1 thermal resistance characteristics features absolute maximum ratings t c =25 unless otherwise specified HFH7N80 800v n - channel mosfet symbol parameter value units v dss drain - source voltage 800 v i d drain current ? continuous (t c = 25 ) 7.0 a drain current ? continuous (t c = 100 ) 4.4 a i dm drain current ? pulsed (note 1) 28 a v gs gate - source voltage 30 v e as single pulsed avalanche energy (note 2) 580 mj i ar avalanche current (note 1) 7.0 a e ar repetitive avalanche energy (note 1) 19.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 ) - derate above 25 198 w 1.59 w/ t j , t stg operating and storage temperature range - 55 to +150 t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 symbol parameter typ. max. units r jc junction -to - case -- 0.63 /w r cs case -to - sink 0.24 -- r ja junction -to - ambient -- 40 mar 2010 to - 3p 1.gate 2. drain 3. source bv dss = 800 v r ds(on) typ = 1.55 i d = 7.0 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 35 nc (typ.) ? extended safe operating area ? lower r ds(on) : 1.55 (typ.) @v gs =10v ? 100% avalanche tested
semihow rev.a0,mar 2010 HFH7N80 electrical characteristics t c =25 c unless otherwise specified symbol parameter test conditions min typ max units on characteristics off characteristics dynamic characteristics switching characteristics source - drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=22.2mh , i as =7.0a , v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 7.0a , di /dt 200a/ s , v dd bv dss , starting t j =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature i s continuous source - drain diode forward current -- -- 7.0 a i sm pulsed source - drain diode forward current -- -- 28 v sd source - drain diode forward voltage i s = 7.0 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 7.0 a, v gs = 0 v di f / dt = 100 a/ s (note 4) -- 780 -- ? qrr reverse recovery charge -- 9.0 -- c v gs gate threshold voltage v ds = v gs , i d = 250 ? 2.5 -- 4.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 3.0 a -- 1.55 1.9 ? bv dss drain - source breakdown voltage v gs = 0 v, i d = 250 ? 800 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 ? , referenced to25 -- 0.93 -- v/ i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 1 ? v ds = 640 v, t c = 125 -- -- 10 ? i gssf gate - body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 ? i gssr gate - body leakage current, reverse v gs = - 30 v, v ds = 0 v -- -- -100 ? c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1500 1950 ? c oss output capacitance -- 120 155 ? c rss reverse transfer capacitance -- 18 24 ? t d(on) turn - on time v ds = 400 v, i d = 7.0 a, r g = 25 ? (note 4,5) -- 40 80 ? t r turn - on rise time -- 120 240 ? t d(off) turn - off delay time -- 60 120 ? t f turn - off fall time -- 70 140 ? q g total gate charge v ds = 640v , i d = 7.0 a, v gs = 10 v (note 4,5) -- 35 45 nc q gs gate - source charge -- 10 -- nc q gd gate - drain charge -- 13 -- nc
semihow rev.a0,mar 2010 HFH7N80 figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics typical characteristics 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v n otes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 2 4 6 8 10 10 -1 10 0 10 1 150 o c 25 o c -55 o c n otes : 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 3 6 9 12 15 18 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 20v v gs = 10v n ote : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 n otes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd n otes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v n ote : i d = 7.0a v gs , gate-source voltage [v] q g , total gate charge [nc]
semihow rev.a0,mar 2010 HFH7N80 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.63 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve typical characteristics (continued) t 2 t 1 p dm -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 n otes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) n otes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 3.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
semihow rev.a0,mar 2010 HFH7N80 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.63 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 n otes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) t 2 t 1 p dm -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 n otes : 1. v gs = 10 v 2. i d = 3.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 i d , drain current [a] t c , case temperature [ ] figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
semihow rev.a0,mar 2010 HFH7N80 fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as = l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut 10v dut r g l i d
semihow rev.a0,mar 2010 HFH7N80 fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
semihow rev.a0,mar 2010 HFH7N80 package dimension 19.9 0.20 9.6 0.20 13.6 0.20 15.6 0.20 14.9 0.20 3.5 0.20 16.5 0.20 5.45typ 5.45typ 2 0.20 1 0.20 3 0.20 13.9 0.20 18.7 0.20 1.5 0.20 4.8 0.20 1.4 0.20 0.6 0.20 3.2 0.20 to - 3p
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