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| ? ! " # $%&&' # ! ( ! ) * )+ $ ! ) ! * ! * ! *) * n-channel mosfet apm9968c handling code temp. range package code package code o : tssop-8 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm9968c o : apm9968c xxxxx xxxxx - date code lead free code top view of tssop ? 8 ? 20v/6a , r ds(on) =16m ? (typ.) @ v gs =4.5v r ds(on) =20m ? (typ.) @ v gs =2.5v ? ? ? ? ? super high dense cell design for extremely low r ds(on) ? ? ? ? ? reliable and rugged ? ? ? ? ? tssop-8 packages ? ? ? ? ? lead free available (rohs compliant) ? power management in notebook computer, portable equipment and battery powered systems ? zener diode protected gate provide human body mode electrostatic discharge protection to 2500 v g2 s2 d s1 s2 (1) (8) (4) (2) (3) (5) (6) (7) s1 d g1 note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature. ? ! " # $%&&' % (t a = 25 c unless otherwise noted) ! " (t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage 20 v gss gate-source voltage 8 v i d * continuous drain current 6 i dm * 300 s pulsed drain current v gs =4.5v 20 a i s * diode continuous forward current 1 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 1.25 p d * maximum power dissipation t a =100 c 0.5 w r ja * thermal resistance-junction to ambient 100 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm9968co symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 20 v v ds =16v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 0.5 0.7 1 v i gss gate leakage current v gs =8v, v ds =0v 10 a v gs =4.5v, i ds =6a 16 20 r ds(on) a drain-source on-state resistance v gs =2.5v, i ds =5.2a 20 25 m ? v sd a diode forward voltage i sd =0.5a, v gs =0v 0.7 1.3 v gate charge characteristics b q g total gate charge 19 25 q gs gate-source charge 2 q gd gate-drain charge v ds =10v, v gs =4.5v, i ds =6a 5 nc ? ! " # $%&&' , ! " # $% (t a = 25 c unless otherwise noted) apm9968co symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 2.5 ? c iss input capacitance 1250 c oss output capacitance 340 c rss reverse transfer capacitance v gs =0v, v ds =15v, frequency=1.0mhz 260 pf t d(on) turn-on delay time 37 68 t r turn-on rise time 33 62 t d(off) turn-off delay time 100 182 t f turn-off fall time v dd =10v, r l =10 ? , i ds =1a, v gen =4.5v, r g =6 ? 54 100 ns notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing. ? ! " # $%&&' - 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 100 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 &' " i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) 0 20406080100120140160 0.0 0.3 0.6 0.9 1.2 1.5 t a =25 o c 0 20406080100120140160 0 2 4 6 8 t a =25 o c,v g =4.5v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 300 s 1ms rds(on) limit 1s t a =25 o c 10ms 100ms dc normalized transient thermal resistance ? ! " # $%&&' ' r ds(on) - on - resistance (m ? ) drain-source on resistance i d - drain current (a) t j - junction temperature ( c) gate threshold voltage v ds - drain-source voltage (v) i d - drain current (a) output characteristics transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) normalized threshold voltage &' " # $% -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 a 012345678 0 4 8 12 16 20 1v 1.5v v gs = 1.8, 2, 3, 4, 5, 6, 7, 8, 9, 10v 0 2 4 6 8 10 12 14 16 18 20 12 14 16 18 20 22 24 26 v gs =2.5v v gs =4.5v 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0 4 8 12 16 20 t j =125 o c t j =25 o c t j =-55 o c ? ! " # $%&&' . v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (pf) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) capacitance gate charge q g - gate charge (nc) v gs - gate - source voltage (v) &' " # $% -50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 r on @t j =25 o c: 16m ? v gs = 4.5v i d = 6a 0.0 0.4 0.8 1.2 1.6 0.1 1 10 20 t j =150 o c t j =25 o c 0 4 8 121620 0 500 1000 1500 2000 2500 frequency=1mhz crss coss ciss 04812162024 0 1 2 3 4 5 v ds =10v i ds = 6a ? ! " # $%&&' / millimeters inches dim min. max. min. max. a 1.2 0.047 a1 0.00 0.15 0.000 0.006 a2 0.80 1.05 0.031 0.041 b 0.19 0.30 0.007 0.012 d 2.9 3.1 0.114 0.122 e 0.65 bsc 0.026 bsc e 6.40 bsc 0.252 bsc e1 4.30 4.50 0.169 0.177 l 0.45 0.75 0.018 0.030 l1 1.0 ref 0.039ref r 0.09 0.004 r1 0.09 0.004 s 0.2 0.008 8 0 8 212 ref 12 ref ref 12 ref l (l1) (3) s (2) 0.25 gauge plane 1 b d e 2 x e / 2 8 12 e/2 e1 e 7 a1 a2 a tssop-8 ? ! " # $%&&' 0 terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p ( (ir/convection or vpr reflow) ( "' ) profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface. ? ! " # $%&&' 1 & * t ao e w po p ko bo d1 d f p1 table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. ( # $% test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles '& ? ! " # $%&&' #& ) + anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 + & application carrier width cover tape width devices per reel tssop- 8 12 9.3 2500 & * # $% a j b t2 t1 c application a b c j t1 t2 w p e 330 1 62 +1.5 12.75+ 0.15 2 + 0.5 12.4 0.2 2 0.2 12 0. 3 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t tssop-8 5.5 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 0.1 2.0 0.1 7.0 0.1 3.6 0.3 1.6 0.1 0.3 0.013 (mm) |
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