2SD2323 silicon npn triple diffused application high voltage switching, igniter features built-in high voltage zener diode (300 v) high speed switching outline to-220fm 1. base
2. collector
3. emitter 1 2 3 1.6 k w
(typ) 160 w
(typ) i d 1 2 3
2SD2323 2 absolute maximum ratings (ta = 25c) item symbol rating unit collector to base voltage v cbo 300 v collector to emitter voltage v ceo 300 v emitter to base voltage v ebo 7v collector current i c 6a diode current i d * 1 6a collector peak current i c(peak) 10 a collector power dissipation p c * 1 30 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c. electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 300 420 v i c = 0.1 ma, i e = 0 collector to emitter sustain voltage v ceo(sus) 300 v i c = 3 a, r be = , l = 10 mh emitter to base breakdown voltage v (br)ebo 7vi e = 50 ma, i c = 0 collector cutoff current i ceo 100 a v ce = 300 v, r be = dc current transfer ratio h fe 500 v ce = 2 v, i c = 4 a collector to emitter saturation voltage v ce(sat) 1.5 v i c = 4 a, i b = 40 ma base to emitter saturation voltage v be(sat) 2.0 v i c = 4 a, i b = 40 ma emitter to collector forward voltage v ecf 3.5 v i f = 6 a turn on time t on 1.2 s i c = 4 a, v cc = 20 v i b1 = Ci b2 = 40 ma storage time t stg 8.0 fall time t f 8.0
2SD2323 3 0 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 50 100 150 10 30 20 collector to emitter voltage v ce (v) collector current i c (a) 0.003 0.01 0.03 0.1 0.3 1.0 3 30 10 1 3 10 30 100 300 1,000 area of safe operation pw = 500 m s (1 shot) 1 ms (1 shot) 10 ms (1 shot) dc operation
(t c = 25 c) i c (peak) i c (max) collector to emitter voltage v ce (v) collector current i c (a) 0 typical output characteristics 12345 1 2 3 4 5 t c = 25 c i b = 0.35 ma 0.4 0.5 0.6 0.8 1.0 1.2 1.8 3 10 30 100 1,000 3,000 10,000 300 collector current i c (a) dc current transfer ratio h fe 0.1 0.3 1.0 3 10 dc current transfer ratio
vs. collector current ta = 75 c ?5 c 25 c v ce = 2 v
pulse test
2SD2323 4 0.1 0.3 1.0 3 10 collector current i c (a) 0.1 0.3 1.0 3 10 30 100 collector to emitter saturation voltage v ce (sat) (v)
base to emitter saturation voltage v be (sat) (v) saturation voltage vs. collector current v be (sat) v ce (sat) ?5 c ?5 c 75 c 75 c 25 c 25 c l c = 100 l b 0.1 0.3 1.0 3 10 30 100 time t thermal resistance q j-c ( c/w) 0.1 1.0 10 100 (s) 0.1 1.0 10 100 (ms) transient thermal resistance t c = 25 c 0.1 s to 100 s 1 ms to 100 ms ambient temperature ta ( c) zener voltage v z (v cbo ) (v) 0 100 200 300 400 500 200 20406080 zener voltage vs. ambient temperature i c = 0.1 ma
i e = 0
2SD2323 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
semiconductor & ic div.
nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan
tel: tokyo (03) 3270-2111
fax: (03) 3270-5109 for further information write to:
hitachi america, ltd.
semiconductor & ic div.
2000 sierra point parkway
brisbane, ca. 94005-1835
u s a
tel: 415-589-8300
fax: 415-583-4207
hitachi europe gmbh
electronic components group
continental europe
dornacher stra? 3
d-85622 feldkirchen
m?nchen
tel: 089-9 91 80-0
fax: 089-9 29 30 00
hitachi europe ltd.
electronic components div.
northern europe headquarters
whitebrook park
lower cookham road
maidenhead
berkshire sl6 8ya
united kingdom
tel: 0628-585000
fax: 0628-778322
hitachi asia pte. ltd.
16 collyer quay #20-00
hitachi tower
singapore 0104
tel: 535-2100
fax: 535-1533
hitachi asia (hong kong) ltd.
unit 706, north tower,
world finance centre,
harbour city, canton road
tsim sha tsui, kowloon
hong kong
tel: 27359218
fax: 27306071
|
