powerex, inc., hillis street, youngwood, pennsylvania 15697 (724)925-7272 cd42__60, cd47__60 dual scr isolated pow-r-blok tm module 60 amperes / up to 1600 volts ordering information example: select the complete eight digit module part number from the table below. example: cd421660 is a 1600volt, 60 ampere dual scr/diode isolated pow-r-blok tm module description: powerex dual scr/diode modules are designed for use in applications requiring phase control and isolated packaging. the modules are isolated for easy mounting with other components on a common heatsink. pow-r-blok tm has been tested and recognized by the underwriters laboratories. features: electrically isolated heatsinking dbc alumina (al 2 o 3 ) insulator glass passivated chips dbc alumina (al 2 o 3 ) baseplate low thermal impedance for improved current capability quick connect gate terminal with provision for keyed mating plug ul recognized (e78240) benefits: no additional insulation components required easy installation no clamping components required reduce engineering time applications: bridge circuits ac & dc motor drives battery supplies power supplies large igbt circuit front ends lighting control heat & temperature control welders 07/07/2000 cd42__60 cd47__60 cd42, cd47 outline dimensions dimension inches millimeters a 3.62 92 b 0.81 20.5 c 3.15 80 d 1.18 30 f 0.59 15 g 0.79 20 h 0.79 20 j 0.16 4 k 0.23 5.8 l 0.61 15.5 m 1.14 29 n 0.24 6.1 p 0.94 24 q 1.18 30 r 0.71 18 s 0.11 x .03 2.8 x 0.8 t 0.25 6.3 u m5 m5 note: dimensions are for reference only. type voltage volts (x100) current amperes (x 1) cd42 cd47 08 12 14 16 60 outline drawing 45 7 6 1 2 3 c g h f l j k b a p q d m n r "s" faston tab "t" "u" thread connection diagram 1 2 7 3 6 1 4 2 + ~ 5 3 - cd42 cd47 ~ + - pow-r-blok tm dual scr / diode isolated module 60 amperes / up to 1600 volts
powerex, inc., hillis street, youngwood, pennsylvania 15697 (724)925-7272 absolute maximum ratings characteristics conditions symbol units repetitive peak forward and reverse blocking voltage v drm & v rrm up to 1600 v non-repetitive peak reverse blocking voltage (t < 5 msec) v rsm v rrm + 100 v rms forward current 180 conduction, t c =95 c 180 conduction, t c =95 c (ac switch) i t(rms) i t(rms) 95 135 a a average forward current 180 conduction, t c =95 c i t(av) 60 a peak one cycle surge current, non-repetitive 60 hz, 100% v rrm reapplied, t j =125 c 60 hz, no v rrm reapplied, t j =125 c 60 hz, no v rrm reapplied, t j =25 c 50 hz, 100% v rrm reapplied, t j =125 c 50 hz, no v rrm reapplied, t j =125 c 50 hz, no v rrm reapplied, t j =25 c i tsm i tsm i tsm i tsm i tsm i tsm 1,470 1,740 1,940 1,400 1,665 1,850 a a a a a a peak three cycle surge current, non-repetitive 60 hz, 100% v rrm reapplied, t j =125 c 50 hz, 100% v rrm reapplied, t j =125 c i tsm i tsm 1,120 1,080 a a peak ten cycle surge current, non-repetitive 60 hz, 100% v rrm reapplied, t j =125 c 50 hz, 100% v rrm reapplied, t j =125 c i tsm i tsm 900 870 a a i 2 t for fusing for one cycle, 8.3 milliseconds 8.3 ms, 100% v rrm reapplied, t j =125 c 8.3 ms, no v rrm reapplied, t j =125 c 8.3 ms, no v rrm reapplied, t j =25 c 10 ms, 100% v rrm reapplied, t j =125 c 10 ms, no v rrm reapplied, t j =125 c 10 ms, no v rrm reapplied, t j =25 c i 2 t i 2 t i 2 t i 2 t i 2 t i 2 t 8,960 12,560 15,600 9,800 13,860 17,110 a 2 sec a 2 sec a 2 sec a 2 sec a 2 sec a 2 sec maximum rate-of-rise of on-state current, (non-repetitive) t j =25 c, i g =0.5 a, v d =0.67 v drm (rated), i tm =300a , t r < 0.5 t s, t p > 6 t s di/dt 150 a/ t s peak gate power dissipation t p < 5 ms, t j = 125c p gm 12 w average gate power dissipation f = 50 hz, t j = 125c p g(av) 3 w peak forward gate current t p < 5 ms, t j = 125c i gfm 3 a peak reverse gate voltage t p < 5 ms, t j = 125c v grm 10 v operating temperature t j -40 to +125 c storage temperature t stg -40 to +125 c max. mounting torque, m5 mounting screw on terminals 25 3 in.-lb. nm max. mounting torque, module to heatsink 44 5 in.-lb. nm module weight, typical 83 g 3 oz. v isolation @ 25c circuit to base, all terminals shorted together 50 ? 60 hz, 1 minute 50 ? 60 hz, 1 second v rms v rms 2500 3500 v v 07/07/2000 cd42__60 cd47__60 pow-r-blok tm dual scr / diode isolated module 60 amperes / up to 1600 volts
powerex, inc., hillis street, youngwood, pennsylvania 15697 (724)925-7272 electrical characteristics, t j =25 c unless otherwise specified characteristics symbol test conditions min. max. units repetitive peak forward leakage current i drm up to 1600v, t j =125 c 15 ma repetitive peak reverse leakage current i rrm up to 1600v, t j =125 c 15 ma peak on-state voltage v tm / v fm i tm / i fm =235a 1.59 v threshold voltage, low-level slope resistance, low-level v (to)1 r t1 t j = 125 c, i = 16.7% x i t(av) to i t(av) 0.82 3.00 v m threshold voltage, high-level slope resistance, high-level v (to)2 r t2 t j = 125 c, i = i t(av) to i tsm 0.85 2.90 v m v tm coefficients, full range t j = 125 c, i = 15% x i t(av) to i tsm v tm = a+ b ln i +c i + d sqrt i a = b = c = d = 0.8127 5.23e-03 2.90e-03 -9.17e-05 minimum dv/dt dv/dt linear to 2/3 v drm t j =125 c, gate open circuit 500 v/ t s turn-off time (typical) t off t j = 25 c, i t = 2a v r = 50v, -di/dt=10 a/ t s re-applied dv/dt = 200 v/ t s, linear to 900 v 40 - 100 (typical) t s gate trigger current i gt t j = -40 c, v d =6v, resistive load t j = 25 c, v d =6v, resistive load t j =125 c, v d =6v, resistive load 270 150 80 ma ma ma gate trigger voltage v gt t j = -40 c, v d =6v, resistive load t j = 25 c, v d =6v, resistive load t j =125 c, v d =6v, resistive load 4.0 2.5 1.7 volts volts volts non-triggering gate voltage v gdm t j =125 c, v d =v drm 0.25 volts non-triggering gate current i gdm t j =125 c, v d =v drm 6 ma holding current i h v d =6v, resistive load, gate open 200 ma latching current i l v d =6v, resistive load 400 ma thermal characteristics characteristics symbol max. units thermal resistance, junction to case dc operation r j-c per module, both conducting per junction, both conducting 0.165 0.330 c/w c/w thermal impedance coefficients z 8 j-c z 8 j-c = k 1 (1-exp(-t/ [ 1 )) + k 2 (1-exp(-t/ [ 2 )) + k 3 (1-exp(-t/ [ 3 )) + k 4 (1-exp(-t/ [ 4 )) k 1 = 2.68 e-3 k 2 = 9.52 e-3 k 3 = 1.26 e-1 k 4 = 2.01 e-1 [ 1 = 3.10 e-5 [ 2 = 1.07 e-3 [ 3 = 2.02 e-2 [ 4 = 1.39 e-1 thermal resistance, case to sink lubricated r c-s per module 0.1 c/w 07/07/2000 cd42__60 cd47__60 pow-r-blok tm dual scr / diode isolated module 60 amperes / up to 1600 volts
powerex, inc., hillis street, youngwood, pennsylvania 15697 (724)925-7272 07/07/2000 cd42__60 cd47__60 dual scr / diode module 60 amperes / up to 1600 volts 0 180 360 conduction angle maximum on-state power dissipation 30 60 90 120 180 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 55 60 average on-state current - it/if(av) - amperes max. power dissipation per junction - watts (sinusoidal waveform) 0 180 360 conduction angle maximum allowable case temperature 120 90 60 30 180 95 100 105 110 115 120 125 0 5 10 15 20 25 30 35 40 45 50 55 60 average on-state current - it/if(av) - amperes max. case temperature - tcase -c (sinusoidal waveform) 0 180 360 conduction angle maximum on-state power dissipation 90 60 30 120 180 270 15 360 0 20 40 60 80 100 120 0 102030405060708090100 average on-state current - it/ifav) - amperes max. power dissipation per junction - watts (rectangular waveform) 0 180 360 conduction angle maximum allowable case temperature 270 180 120 90 60 30 360 85 90 95 100 105 110 115 120 125 0 102030405060708090100 average on-state current - it/if(av) - amperes max. case temperature - tcase - c (rectangular waveform) maximum on-state forward voltage drop 0 0.5 1 1.5 2 2.5 3 3.5 4 10 100 1000 instantaneous on-state current - itm/ifm - amperes on-state voltage - vtm/vfm - volts ( tj = 125 c ) maximum transient thermal impedance 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.001 0.01 0.1 1 10 100 time - t - seconds thermal impedance - rjc - c/w (junction to case)
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