regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
feb.1999 mitsubishi semiconductor thyristor ? cr5as medium power use non-insulated type, glass passivation type cr5as application switching mode power supply, regulator for autocycle, such as tv. vcr. printer, ignitors for autocycle, electric tools, other general purpose control applications, strobe flasher ?i t (av) ........................................................................... 5a ?v drm ..............................................................400v/600v ?i gt ......................................................................... 200 m a symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage ] 1 dc off-state voltage ] 1 voltage class unit v v v v v maximum ratings 8 400 500 320 400 320 12 600 720 480 600 480 symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, t c =88 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a a 2 s w w v v a c c g ratings 7.8 5 90 33 0.5 0.1 6 6 0.3 C40 ~ +125 C40 ~ +125 0.26 ] 1. with gate-to-cathode resistance r gk =220 w 6.5 5.0?.2 2.3 2.3 0.9 max 1.0 5.5?.2 2.3 10 max 0.5?.1 0.5?.2 0.8 1.5?.2 1 .0 max 23 4 1 type name voltage class * 2.3 min * measurement point of case temperature outline drawing dimensions in mm mp-3 24 1 3 1
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feb.1999 mitsubishi semiconductor thyristor ? cr5as medium power use non-insulated type, glass passivation type ] 2. the method point for case temperature is at anode tab. ] 3. if special values of i gt are required, choose at least two items from those listed in the table below. (example: ab, bd) the above values do not include the current flowing through the 220 w resistance between the gate and cathode. b 20 ~ 50 item i gt ( m a) a 1 ~ 30 c 40 ~ 100 d 80 ~ 200 electrical characteristics test conditions t j =125 c, v rrm applied, r gk =220 w t j =125 c, v drm applied, r gk =220 w t c =25 c, i tm =15a, instantaneous value t j =25 c, v d =6v, i t =0.1a t j =125 c, v d =1/2v drm , r gk =220 w t j =25 c, v d =6v, i t =0.1a t j =25 c, v d =12v, r gk =220 w junction to case ] 2 unit ma ma v v v m a ma c/w typ. 3.5 symbol i rrm i drm v tm v gt v gd i gt i h r th (j-c) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current holding current thermal resistance limits min. 0.1 1 max. 2.0 2.0 1.8 0.8 200 ] 3 3.0 10 0 23 5710 1 40 20 23 5710 2 44 60 80 100 30 10 50 70 90 0 3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t c = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor thyristor ? cr5as medium power use non-insulated type, glass passivation type 10 2 10 0 10 ? 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 7 5 23 57 10 1 23 57 10 2 23 57 23 10 ? v fgm = 6v v gt = 0.8v i gt = 200? (t j = 25?) p gm = 0.5w p g(av) = 0.1w v gd = 0.1v i fgm = 0.3a 16 14 6 4 2 12 10 8 0 80 2467135 q 360 q = 30 60 120 90 180 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) gate voltage (v) gate current (ma) 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 23 10 ? 5710 ? 23 5710 ? 23 5710 0 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 junction to ambient junction to case allowable case temperature vs. average on-state current (single-phase half wave) case temperature (?) average on-state current (a) maximum transient thermal impedance characteristics transient thermal impedance (?/w) time (s) 160 120 60 40 20 140 100 80 0 80 2467135 q 360 resistive, inductive loads q = 30 60 120 90 180 gate characteristics 120 14060?0?0?0 0 2 0 4 0 8 0 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example gate trigger current vs. junction temperature junction temperature (?) 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?) # 1 # 2 # 1 @ 11? # 2 @ 61? i gt (25?) r l = 60 w v d = 6v 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120 140?0?0 ?0 20 80 0.2 0.5 0.9 060 40 100 typical example distribution gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) t j = 25?
feb.1999 mitsubishi semiconductor thyristor ? cr5as medium power use non-insulated type, glass passivation type 16 12 6 4 2 14 10 8 0 80 2467135 q = 30 60 120 90 180 q q 360 resistive loads 160 120 60 40 20 140 100 80 0 1.60 0.4 0.8 1.2 1.40.2 0.6 1.0 q = 30 60 120 90 180 q 360 resistive, inductive loads natural convection without fin 160 120 60 40 20 140 100 80 0 1.60 0.4 0.8 1.2 1.40.2 0.6 1.0 q = 30 60 120 90 180 q q 360 without fin resistive loads natural convection 160 120 60 40 20 140 100 80 0 80 2467135 q = 30 60 90 q q 360 120 180 resistive loads allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) case temperature (?) average on-state current (a) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) 160 120 60 40 20 140 100 80 0 80 2467135 80 80 t2.3 q = 30 60 120 180 90 q q 360 resistive loads natural convection aluminum board 160 120 60 40 20 140 100 80 0 80 2467135 q = 30 60 120 90 180 q 360 resistive, inductive loads natural convection aluminum board 80 80 t2.3 allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a)
feb.1999 mitsubishi semiconductor thyristor ? cr5as medium power use non-insulated type, glass passivation type ?0 ?0 0 2 0 40 60 80 100 120 140 160 160 0 80 100 120 140 40 60 20 typical example ?0 ?0 0 2 0 40 60 80 100 120 140 160 160 0 80 100 120 140 40 60 20 r gk = 220 w typical example breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25? ) 23 10 0 5710 1 23 5710 2 23 5710 3 160 0 120 140 40 60 80 100 20 t j = 125? r gk = 220 w typical example breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = vv/? ) breakover voltage ( dv/dt = 1v/? ) repetitive peak reverse voltage vs. junction temperature junction temperature (?) 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25? ) 23 5710 -1 23 5710 0 23 5710 1 10 2 10 1 10 3 10 0 2 3 5 7 2 3 5 7 2 3 5 7 typical example t j = 125? breakover voltage vs. gate to cathode resistance gate to cathode resistance ( w ) 100 (%) breakover voltage ( r gk = r w ) breakover voltage ( r gk = 220 w ) 60?0?0?0 0 2 0 4 0 8 0 100 120 140 7 5 3 4 2 7 5 3 4 2 10 ? 10 0 10 1 distribution holding current vs. junction temperature holding current (ma) junction temperature (?) typical example i gt (25?)= 35? v d = 12v r gk = 220 w 23 5710 -1 23 5710 0 23 5710 1 400 0 100 150 200 250 300 350 50 holding current vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) holding current ( r gk = r w ) holding current ( r gk = 220 w ) # 1 14? 1.7ma # 2 48? 2.7ma i gt (25?) i h (1k) typical example t j = 25? # 1 # 2
feb.1999 mitsubishi semiconductor thyristor ? cr5as medium power use non-insulated type, glass passivation type 10 2 23 10 0 5 44 710 1 23 5710 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 typical example gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) # 1 11? # 2 61? i gt (dc) t a = 25? r l = 60 w v d = 6v # 1 # 2
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