i c , nom 25 a i c 40 a min. typ. max. - 1,7 2,15 v - 2,0 - v i2t value i2t v ge(th) c ies na gate emitter leakage current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c i ges - 400 6,5 - - - v nf 1,8 - 0,24 - c a dc forward current + 20 170 a2s t p = 1ms i frm 50 a grenzlastintegral 50 dauergleichstrom i f 25 t c = 25c; transistor repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom w v gate emitter peak voltage t c = 25c dc collector current h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom collector emitter voltage t vj = 25c 1200 v elektrische eigenschaften / electrical properties i c = 25a, v ge = 15v, t vj = 125c gate schwellenspannung i c = 1ma, v ce = v ge , t vj = 25c gate threshold voltage periodischer spitzenstrom gesamt verlustleistung total power dissipation gate emitter spitzenspannung v cesat charakteristische werte / characteristic values approved: sm tm; robert severin v r = 0v, t p = 10ms, t vj = 125c technische information / technical information fs25r12ke3 g igbt-module igbt-modules v ces a isolations prfspannung insulation test voltage rms, f= 50hz, t= 1min. v isol i crm p tot 145 repetitive peak forward current kv 2,5 5,0 5,8 transistor wechselrichter / transistor inverter date of publication: 2002-09-03 kollektor emitter s?ttigungsspannung i c = 25a, v ge = 15v, t vj = 25c collector emitter saturation voltage v ges revision: 3.0 eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v prepared by: mod-d2; m. mnzer kollektor emitter reststrom c res collector emitter cut off current i ces rckwirkungskapazit?t reverse transfer capacitance nf - 0,064 f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v - gateladung v ge = -15v...+15v q g - gate charge ma 5 - v ce = 1200v, v ge = 0v, t vj = 25c 1 (8) db_fs25r12ke3 _g_3.0.xls 2002-09-03
technische information / technical information fs25r12ke3 g igbt-module igbt-modules min. typ. max. - 0,09 - s - 0,09 - s - 0,03 - s - 0,05 - s - 0,42 - s - 0,52 - s - 0,07 - s - 0,09 - s - 1,65 2,15 v - 1,65 - v - 33 - a - 35 - a - 2,6 - c - 4,9 - c - 1,1 - mj - 2,1 - mj sperrverz?gerungsladung recovered charge i f = 25a, -di f /dt= 1100a/s kurzschlussverhalten t p 10s, v ge 15v, t vj 125c i sc - 100 - a sc data v cc = 900v, v cemax = v ces - l ce di/dt einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls fallzeit (induktive last) fall time (inductive load) v ge = 15v, r g = 36 ? , t vj = 25c v ge = 15v, r g = 36 ? , t vj = 125c - nh stray inductance module modulinduktivit?t l ce - diode wechselrichter / diode inverter 2,5 q r ausschaltenergie pro puls reverse recovery energy e rec v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c i f = 25a, -di f /dt= 1100a/s 19 turn off energy loss per pulse e off i c = 25a, v cc = 600v, l = 70nh v ge = 15v, r g = 36 ? , t vj = 125c - 3,4 leitungswiderstand, anschluss-chip lead resistance, terminal-chip r cc/ee t c = 25c - mj - mj e on i c = 25a, v cc = 600v, l = 70nh v ge = 15v, r g = 36 ? , t vj = 125c i c = 25a, v cc = 600v t d,off v ge = 15v, r g = 36 ? , t vj = 25c v ge = 15v, r g = 36 ? , t vj = 125c i c = 25a, v cc = 600v m ? charakteristische werte / characteristic values i c = 25a, v cc = 600v v ge = 15v, r g = 36 ? , t vj = 25c - - t f v ge = 15v, r g = 36 ? , t vj = 25c v ge = 15v, r g = 36 ? , t vj = 125c - 2,5 v r = 600v, v ge = -15v, t vj = 125c v f forward voltage rckstromspitze peak reverse recovery current i rm charakteristische werte / characteristic values i f = 25a, v ge = 0v, t vj = 25c i f = 25a, v ge = 0v, t vj = 125c einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) v ge = 15v, r g = 36 ? , t vj = 125c abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c transistor wechselrichter / transistor inverter t d,on anstiegszeit (induktive last) rise time (inductive load) i c = 25a, v cc = 600v t r v r = 600v, v ge = -15v, t vj = 25c i f = 25a, -di f /dt= 1100a/s durchlassspannung 2 (8) db_fs25r12ke3 _g_3.0.xls 2002-09-03
technische information / technical information fs25r12ke3 g igbt-module igbt-modules min. typ. max. - - 0,86 k/w - - 1,50 k/w 7,5 mm clearence distance luftstrecke 10 mm creepage distance kriechstrecke this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechelr. / transistor inverter diode wechselrichter / diode inverter r thjc mechanische eigenschaften / mechanical properties nm anzugsdrehmoment, mech. befestigung mounting torque t vj op mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. 125 c c t stg -40 - 125 lagertemperatur storage temperature -- -40 - c 20 mw 150 - b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] b 25/50 k/w - 0,02 - 3375 - k - - charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand t c = 25c rated resistance deviation of r 100 b-value % pro modul / per module paste = 1w/m*k / grease = 1w/m*k operation temperature maximum junction temperature betriebstemperatur r thck thermal resistance, case to heatsink h?chstzul?ssige sperrschichttemp. bergangs w?rmewiderstand t vj max verlustleistung t c = 100c, r 100 = 493 ? ? r/r t c = 25c p 25 power dissipation -5 abweichung von r 100 r 25 - k ? thermische eigenschaften / thermal properties -5 - 5 al 2 o 3 schraube / screw m5 comperative tracking index geh?use, siehe anlage case, see appendix innere isolation 6 internal insulation cti 225 m 3 - g weight g 180 gewicht 3 (8) db_fs25r12ke3 _g_3.0.xls 2002-09-03
technische information / technical information fs25r12ke3 g igbt-module igbt-modules a usgangs k enn li n i e (t yp i sc h) i c = f(v ce ) output characteristic (typical) t vj = 125c output characteristic (typical) v ge = 15v a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) 0 5 10 15 20 25 30 35 40 45 50 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 v ce [v] i c [a] tvj = 25c tvj = 125c 0 5 10 15 20 25 30 35 40 45 50 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_fs25r12ke3 _g_3.0.xls 2002-09-03
technische information / technical information fs25r12ke3 g igbt-module igbt-modules b er t ragungsc h ara kt er i s tik (t yp i sc h) transfer characteristic (typical) i c = f(v ge ) v ce = 20v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward caracteristic of inverse diode (typical) 0 5 10 15 20 25 30 35 40 45 50 456789101112 v ge [v] i c [a] tvj=25c tvj=125c 0 5 10 15 20 25 30 35 40 45 50 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) db_fs25r12ke3 _g_3.0.xls 2002-09-03
technische information / technical information fs25r12ke3 g igbt-module igbt-modules s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f(i c ), e off = f(i c ), e rec = f(i c ) v ge =15v, r g = 36 ? , v ce = 600v, t vj = 125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c = 25a, v ce = 600v, t vj = 125c 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 40 45 50 i c [a] e [mj] eon eoff erec 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 160 r g [ ? ] e [mj] eon eoff erec 6 (8) db_fs25r12ke3 _g_3.0.xls 2002-09-03
technische information / technical information fs25r12ke3 g igbt-module igbt-modules z thjc = f (t) 3 3,905e-01 2,820e-02 transient thermal impedance 2,345e-03 transienter w?rmewiderstand sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, r g =36 ? , t vj =125c i r i [k/w] : igbt i [s] : igbt r i [k/w] : diode i [s] : diode 1 9,780e-02 8,980e-02 7,662e-01 1,520e-01 3,333e-03 9,850e-01 3,429e-02 2,830e-01 1,294e-01 2,198e-01 1,128e-01 2 1,519e-01 2,820e-01 4 0,01 0,1 1 10 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : diode 0 10 20 30 40 50 60 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip ic,modul 7 (8) db_fs25r12ke3 _g_3.0.xls 2002-09-03
technische information / technical information fs25r12ke3 g igbt-module igbt-modules geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_fs25r12ke3 _g_3.0.xls 2002-09-03
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