vishay tlvg / h / p / s / y420. document number 83057 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19231 backlighting led in ? 3 mm tinted non-diffused package description the tlv.4200 series was developed for backlighting. due to its special shape the spatial distribution of the radiation is qualified for backlighting. to optimize the brightness of backlighting a custom- built reflector (with scattering) is required. uniform illumination can be enhanced by covering the front of the reflector with diffusor material. this is a flexible solution for backlighting different areas. features ? high light output wide viewing angle categorized for luminous flux tinted clear package low power dissipation low self heating rugged design high reliability lead-free device applications backlighting of display panels, lcd displays, symbols on switches, keyboards, graphic boards and measur- ing scales illumination of large areas e.g. dot matrix displays parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlvh4200 , TLVS4200 , tlvy4200 , tlvg4200 , tlvp4200 part color, luminous intensity angle of half intensity ( ? ) technology tlvh4200 red, v > 10 mlm 85 gaasp on gap tlvh4201 red, v = (16 to 32) mlm 85 gaasp on gap TLVS4200 soft orange, v > 10 mlm 85 gaasp on gap tlvy4200 yellow, v > 10 mlm 85 gaasp on gap tlvg4200 green, v > 10 mlm 85 gap on gap tlvp4200 pure green, v > 4 mlm 85 gap on gap parameter test condition symbol value unit reverse voltage v r 6v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 si fsm 1a
www.vishay.com 2 document number 83057 rev. 1.4, 31-aug-04 vishay tlvg / h / p / s / y420. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlvh4200 soft orange TLVS4200 yellow tlvy4200 power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 400 k/w parameter test condition part symbol min ty p. max unit luminous flux i f = 15 ma tlvh4200 v 10 25 mlm tlvh4201 v 16 32 mlm dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma ? 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous flux i f = 15 ma v 10 25 mlm dominant wavelength i f = 10 ma d 598 611 nm peak wavelength i f = 10 ma p 605 nm angle of half intensity i f = 10 ma ? 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous flux i f = 15 ma v 10 20 mlm dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol value unit
vishay tlvg / h / p / s / y420. document number 83057 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 3 green tlvg4200 pure green tlvp4200 typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit luminous flux i f = 15 ma v 10 30 mlm dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous flux i f = 15 ma v 410 mlm dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma ? 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf figure 1. power dissipation vs. ambient temperature 100 80 60 40 0 25 50 75 100 125 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 95 10904 20 0 figure 2. forward current vs. ambient temperature for ingan 0 10 20 30 40 60 i - forward current ( ma) f 95 10905 50 t amb - ambient temperature ( c) 100 80 60 40 20 0
www.vishay.com 4 document number 83057 rev. 1.4, 31-aug-04 vishay tlvg / h / p / s / y420. vishay semiconductors figure 3. forward current vs. pulse length figure 4. forward current vs. forward voltage figure 5. rel. luminous flux vs. ambient temperature 0.02 0.05 0.1 0.2 1 0.5 t p /t= 0.01 t amb 65 c 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 10047 i - forward current ( ma ) f red t p /t = 0.001 t p =10 s 0.1 1 10 100 1000 95 10026 v f - forward voltag e(v) i - forward current ( ma ) f 10 8 6 4 2 0 0 0 0.4 0.8 1.2 1.6 95 10472 20 40 60 80 100 i f =10ma v rel - relative luminous flux t amb - ambient temperature ( c) red figure 6. rel. luminous flux vs. forw. current/duty cycle figure 7. relative luminous flux vs. forward current figure 8. relative intensity vs. wavelength red 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 v rel - relative luminous flux 95 10473 0.01 0.1 1 10 i f - forward current ( ma ) 95 10474 v rel - relative luminous flux 110 100 red 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 - wavelength ( nm ) 1.0 red i - relative luminous intensity vre l
vishay tlvg / h / p / s / y420. document number 83057 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 5 figure 9. forward current vs. forward voltage figure 10. rel. luminous flux vs. ambient temperature figure 11. rel. luminous flux vs. forw. current/duty cycle 0.1 1 10 100 95 9990 i - forward current ( ma ) f soft orange v f - forward voltag e(v) 5 4 3 2 1 0 0 0.4 0.8 1.2 1.6 2.0 96 11599 soft orange v rel - relative luminous flux 020406080100 t amb - ambient temperature ( c) soft orange 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11600 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 v rel - relative luminous flux figure 12. relative luminous flux vs. forward current figure 13. relative intensity vs. wavelength figure 14. forward current vs. forward voltage 0.01 0.1 1 10 i f - forward current ( ma ) 96 11601 soft orange v rel - relative luminous flux 1 10 100 95 10324 soft orange 570 590 610 630 650 0 0.2 0.4 0.6 0.8 1.2 670 - wavelength ( nm ) 1.0 i - relative luminous intensity vrel 0.1 1 10 100 1000 10 8 6 4 2 0 95 10030 v f - forward voltag e(v) i - forward current ( ma ) f yellow t p /t = 0.001 t p =10 s
www.vishay.com 6 document number 83057 rev. 1.4, 31-aug-04 vishay tlvg / h / p / s / y420. vishay semiconductors figure 15. rel. luminous flux vs. ambient temperature figure 16. rel. luminous flux vs. forw. current/duty cycle figure 17. relative luminous flux vs. forward current 0 0 0.4 0.8 1.2 1.6 20 40 60 80 100 yellow i f =10ma v rel - relative luminous flux 95 10475 t amb - ambient temperature ( c) yellow 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10476 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 v rel - relative luminous flux yellow 0.01 0.1 1 10 i f - forward current ( ma ) 95 10477 v rel - relative luminous flux 1 10 100 figure 18. relative intensity vs. wavelength figure 19. forward current vs. forward voltage figure 20. rel. luminous flux vs. ambient temperature 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 - - wavelength ( nm ) 1.0 yellow i - relative luminous intensity vrel 0.1 1 10 100 1000 10 8 6 4 2 0 95 10034 v f - forward voltag e(v) i - forward current ( ma ) f green t p /t = 0.001 t p =10 s i f =10ma green 0 0 0.4 0.8 1.2 1.6 20 40 60 80 100 v rel - relative luminous flux 95 10478 t amb - ambient temperature ( c)
vishay tlvg / h / p / s / y420. document number 83057 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 7 figure 21. rel. luminous flux vs. forw. current/duty cycle figure 22. relative luminous flux vs. forward current figure 23. relative intensity vs. wavelength green 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10479 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 v rel - relative luminous flux green 0.01 0.1 1 10 i f - forward current ( ma ) 95 10480 v rel - relative luminous flux 1 10 100 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 - - wavelength ( nm ) 1.0 green i - relative luminous intensity vrel figure 24. forward current vs. forward voltage figure 25. rel. luminous flux vs. ambient temperature figure 26. rel. luminous flux vs. forw. current/duty cycle 01234 0.1 1 10 100 5 95 9988 pure green f i ?f orward current ( ma ) v f ? forward voltag e(v) pure green 0 0.4 0.8 1.2 1.6 2.0 96 11602 v rel - relative luminous flux 020406080100 t amb - ambient temperature ( c) pure green 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11603 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 v rel - relative luminous flux
www.vishay.com 8 document number 83057 rev. 1.4, 31-aug-04 vishay tlvg / h / p / s / y420. vishay semiconductors figure 27. relative luminous flux vs. forward current pure green 0.01 0.1 1 10 i f - forward current ( ma ) 96 11604 v rel - relative luminous flux 1 10 100 figure 28. relative intensity vs. wavelength 500 520 540 560 580 0 0.2 0.4 0.6 0.8 1.2 600 95 10325 1.0 pure green - wavelength ( nm ) i - relative luminous intensity vrel 96 11608 i - relative luminous intensity v rel 0.4 0.2 0 0.2 0.4 0.6 0.6 0 30 10 20 40 50 60 70 80 0.8 1.0 0.8 1.0 figure 29. rel. luminous int ensity vs. angular displacement for 90 emission angle
vishay tlvg / h / p / s / y420. document number 83057 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 9 package dimensions in mm 9510954
www.vishay.com 10 document number 83057 rev. 1.4, 31-aug-04 vishay tlvg / h / p / s / y420. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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