elektronische bauelemente 2SB1132 -1a, -40v pnp silicon medium power transistor 10-dec-2010 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features low power dissipation 0.5w marking classification of h fe product rank 2SB1132-p 2SB1132-q 2SB1132-r range 82~180 120~270 180~390 package information package mpq leadersize sot-89 1k 7 inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -5 v collector current (dc) i c -1 a collector power dissipation p c 500 mw junction & storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -40 - - v i c = -50 a, i e =0 collector-emitter breakdown voltage v (br)ceo -32 - - v i c = -1ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - - v i e = -50 a, i c =0 collector cut-off current i cbo - - -0.5 a v cb = -20v, i e =0 emitter cut-off current i ebo - - -0.5 a v eb = -4v, i c =0 dc current gain h fe 82 - 390 v ce = -3v, i c = -100ma collector-emitter saturation voltage v ce(sat) - -0.2 -0.5 v i c = -500ma, i b = -50ma transition frequency f t - 150 - mhz v ce = -5v, i c = -50ma, f=30mhz collector output capacitance c ob - 20 30 pf v cb = -10v, i e =0, f=1mhz a e c d b k h f g l j 1 2 3 4 sot-89 1 1 3 2 date code millimeter millimeter ref. min. max. ref. min. max. a 4.4 0 4.6 0 g 0.40 0.58 b 3 . 94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.2 0
elektronische bauelemente 2SB1132 -1a, -40v pnp silicon medium power transistor 10-dec-2010 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente 2SB1132 -1a, -40v pnp silicon medium power transistor 10-dec-2010 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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