regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
mar.2002 mitsubishi semiconductor ? triac ? bcr2pm low power use insulated type, planar passivation type application switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as tv sets ?stereo ?refrigerator ?washing machine ?infrared kotatsu ?carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications bcr2pm ? 1. gate open. outline drawing dimensions in mm to-220f type name voltage class 3.2 0.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 17 2.54 2.8 0.5 2.6 ? ? ? ??? ? ? ? t 1 terminal t 2 terminal gate terminal ? i t (rms) ........................................................................ 2a ? v drm ....................................................................... 600v ? i rgt ! , i rgt # ....................................................... 10ma symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 2 10 0.41 1 0.1 6 1 40 ~ +125 40 ~ +125 2.0 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720
mar.2002 10 0 23 5710 1 4 2 23 5710 2 44 6 8 10 3 1 5 7 9 0 3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) mitsubishi semiconductor ? triac ? bcr2pm low power use insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. symbol i drm v tm v rgt ! v rgt # i rgt ! i rgt # v gd r th (j-a) test conditions t j =125 c, v drm applied t a =25 c, i tm =1.5a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to ambient, natural convection unit ma v v v ma ma v c/w typ. @ # @ # electrical characteristics limits min. 0.1 max. 0.5 1.6 2.0 2.0 10 10 40 performance curves 6 ? 6 ? 6v 6v r g r g a v a v test procedure 3 test procedure 2 gate trigger characteristics test circuits parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance
mar.2002 natural convection no fins print board t = 1.6mm solder land : 2mm 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 1 p gm = 1w p g(av) = 0.1w i gm = 1a i rgt i, i rgt iii v gm = 6v v gd = 0.1v v gt 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 80 120 i rgt i , i rgt iii v rgt i v rgt iii 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 80 120 10 3 10 1 10 3 10 4 10 2 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 23 57 23 57 10 2 10 5 23 57 23 57 natural convection no fins print board t = 1.6mm solder land : 2mm ? ? ? ? 1.8 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 0.2 0.4 0.80.6 1.0 1.2 1.4 0 160 120 60 40 20 140 100 80 0 3.20 0.4 0.8 1.61.2 2.0 2.4 2.8 curves apply regardless of conduction angle resistive, inductive loads gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) gate characteristics 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/w) conduction time (cycles at 60hz) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) typical example typical example 360 conduction resistive, inductive loads ? ? ? ? mitsubishi semiconductor ? triac ? bcr2pm low power use insulated type, planar passivation type
mar.2002 14040 40 60 20 0 2 0 6 0 8 0 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 8 0 120 10 1 160 40 0 4 0 8 0 120 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 160 100 80 40 20 0 14040 40 60 20 0 2 0 6 0 8 0 140 100120 60 120 23 10 0 5710 1 23 5710 2 23 5710 3 120 0 20 40 60 80 100 140 160 t j = 125 c i quadrant iii quadrant 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) holding current vs. junction temperature junction temperature ( c) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/s) 100 (%) breakover voltage ( dv/dt = xv/s ) breakover voltage ( dv/dt = 1v/s ) gate trigger current vs. gate current pulse width gate current pulse width (s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example typical example typical example typical example typical example distribution t 2 + , g typical example t 2 , g typical example mitsubishi semiconductor ? triac ? bcr2pm low power use insulated type, planar passivation type
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