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| inchange semiconductor product specification silicon npn power transistors PMD16K60/80/100 description ? with to-3 package ?high dc current gain ? darlington applications ? designed for use in power switching application. pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit PMD16K60 60 pmd16k80 80 v cbo collector-base voltage pmd16k100 open emitter 100 v PMD16K60 60 pmd16k80 80 v ceo collector-emitter voltage pmd16k100 open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 20 a i cm collector current(peak) 40 a i b base current 0.5 a p d power dissipation t c =25 ?? 200 w t j max. operating junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 0.875 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors PMD16K60/80/100 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit PMD16K60 60 pmd16k80 80 v (br)ceo collector-emitter breakdown voltage pmd16k100 i c =0.1a ; i b =0 100 v v cesat collector-emitter saturation voltage i c =10a ;i b =40ma 2.0 v v besat base-emitter saturation voltage i c =10a ;i b =40ma 2.8 v v be base-emitter on voltage i c =10a ; v ce =3v 2.8 v h fe dc current gain i c =10a ; v ce =3v 1000 20000 i cer collector cut-off current v ce =rated v ceo ; r be = |? t c =150 ?? 1.0 5.0 ma i ebo emitter cut-off current v eb =5v; i c =0 2.0 ma f t transition frequency i c =7a ; v ce =3v;f=1.0khz 4.0 mhz c ob output capacitance i e =0 ; v cb =10v;f=1.0mhz 400 pf inchange semiconductor product specification 3 silicon npn power transistors PMD16K60/80/100 package outline fig.2 outline dimensions |
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