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inchange semiconductor product specification silicon npn power transistors 2SD2053 description ? with to-3pn package ? wide area of safe operation ? complement to type 2sb1362 applications ? for high power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 9 a i cp collector current (pulse) 15 a t a =25 ?? 2.5 p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2053 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma; i b =0 150 v v cesat collector-emitter saturation voltage i c =7a; i b =0.7a 2.0 v v be base-emitter on voltage i c =7a;v ce =5v 1.8 v i cbo collector cut-off current v cb =150v; i e =0 50 | a i ebo emitter cut-off current v eb =5v; i c =0 50 | a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe-2 dc current gain i c =1a ; v ce =5v 60 200 h fe-3 dc current gain i c =7a ; v ce =5v 15 f t transition frequency i c =0.5a ; v ce =5v 20 mhz c ob collector output capacitance f=1mhz;v cb =10v 150 pf ? h fe-2 classifications q p 60-120 100-200
inchange semiconductor product specification 3 silicon npn power transistors 2SD2053 package outline fig.2 outline dimensions

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