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savantic semiconductor product specification silicon npn power transistors 2SD2057 d escription with to-3pfa package high voltage,high speed built-in damper diode wide area of safe operation applications horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i cm collector current-peak 20 a i b base current 4 a t a =25 3 p c collector power dissipation t c =25 100 w t j max.operating junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD2057 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =500ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =5a; i b =1.2a 8.0 v v besat base-emitter saturation voltage i c =5a; i b =1.2a 1.5 v v cb =1000v; i e =0 30 a i cbo collector cut-off current v cb =1500v; i e =0 0.3 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 h fe-2 dc current gain i c =5a ; v ce =10v 4.5 15 f t transition frequency i c =1a ; v ce =10v;f=0.5mhz 2 mhz v f diode forward voltage i c =-6a ;i b =0 -2.3 v t s storage time 12 s t f fall time i c =5a;i b1 =-i b2 =1.2a;l leak =5h 0.8 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD2057 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm)

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