1 PNA1601 silicon npn phototransistor for optical control systems features high sensitivity wide spectral sensitivity, suited for detecting various kinds of leds ultraminiature, thin side-view type package phototransistors (input pulse) (output pulse) 50 r l t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) v cc sig.out 10% 90% sig.in t d t r t f 2.6 0.2 1.2 0.2 0.8 c0.5 r0.55 (0.4) 1.4 0.2 unit : mm 1: collector 2: emitter 2-0.45 2-0.7 0.15 2.0 21 1.7 2.0 0.5 max. 0.8 2.5 0.2 12.5 1.0 0.7 gate the rest absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 20 v collector current i c 20 ma collector power dissipation p c 50 mw operating ambient temperature t opr C25 to +65 ?c storage temperature t stg C30 to +85 ?c electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 0.2 m a sensitivity to infrared emitters s ir *1 v ce = 10v, h = 15 m w/cm 2 3 m a peak sensitivity wavelength l p v ce = 10v 850 nm acceptance half angle q measured from the optical axis to the half power point 35 deg. rise time t r *2 v cc = 10v, i ce(l) = 5ma 4 m s fall time t f *2 r l = 100 w 4 m s collector saturation voltage v ce(sat) i ce(l) = 10 m a, h = 15 m w/cm 2 0.5 v *1 measurements were made using infrared light ( l = 940 nm) as a light source. *2 switching time measuring circuit
2 phototransistors PNA1601 t r ?i ce(l) collector photo current i ce(l) (ma) rise time t r ( s) v ce = 10v ta = 25?c 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 10 ? t f ?i ce(l) collector photo current i ce(l) (ma) fall time t f ( s) v ce = 10v ta = 25?c 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 10 ? r l = 1k 500 100 r l = 1k 500 100 spectral sensitivity characteristics 100 80 60 40 20 wavelength l (nm) relative sensitivity s (%) 700 800 900 1000 1100 1200 0 600 v ce = 10v ta = 25?c v ce = 10v t = 2856k i ce(l) ?ta 10 10 ? 1 ambient temperature ta (?c ) collector photo current i ce(l) (ma) ?40 0 40 80 120 10 ? i ceo ?ta 10 10 ? 10 ? 1 ambient temperature ta (?c ) v ce = 10v dark current i ceo (na) 10 ? ?40 0 40 80 120 p c ?ta 60 50 40 30 20 10 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 ?20 ta = 25?c t = 2856k i ce(l) ?v ce 2.0 1.6 1.2 0.4 0.8 0 collector to emitter voltage v ce (v) collector photo current i ce(l) (ma) 020 16 812 424 i ce(l) ?l 10 1 10 ? illuminance l (lx) collector photo current i ce(l) (ma) 10 10 2 10 3 10 ? 10 ? 1 v ce = 10v ta = 25?c t = 2856k 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics 20 90 100 80 70 60 50 40 30 relative sensitivity s (%) 500 lx l = 1000 lx
|
