1 PNA2603 darlington phototransistor for optical control systems darlington phototransistors 50 t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) sig.in r l v cc sig.out (input pulse) (output pulse) 10% 90% t d t r t f unit : mm r0.6 12 r1.2 0.45 0.15 2-0.45 0.15 2-1.2 0.3 1.2 2.9 0.25 4.5 0.3 3.9 0.3 12.8 min. not soldered 2.4 2.8 1.5 1.7 0.2 0.9 0.8 ?.4 0.2 2.54 2-0.98 0.2 1: emitter 2: collector absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 20 v emitter to collector voltage v eco 5v collector current i c 30 ma collector power dissipation p c 100 mw operating ambient temperature t opr C25 to +80 ?c storage temperature t stg C30 to +100 ?c electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 0.1 0.5 m a collector photo current i ce(l) v ce = 10v, l = 2 lx *1 0.2 1 ma peak sensitivity wavelength l p v ce = 10v 800 nm acceptance half angle q measured from the optical axis to the half power point 40 deg. response time t r , t f *2 v cc = 10v, i ce(l) = 5ma, r l = 100 w 100 m s collector saturation voltage v ce(sat) i ce(l) = 1ma, l = 100 lx *1 0.7 1.5 v *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit features darlington output, high sensitivity easy to combine light emission and photodetection on same printed circuit board small size, thin side-view type package
2 PNA2603 darlington phototransistors p c ?ta 120 100 80 60 40 20 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 ?20 spectral sensitivity characteristics 100 80 60 40 20 wavelength l (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 ta = 25?c i ce(l) ?v ce 32 24 16 8 0 collector to emitter voltage v ce (v) collector photo current i ce(l) (ma) 020 16 812 424 ta = 25?c t = 2856k i ce(l) ?l 10 3 10 2 10 1 illuminance l (lx) collector photo current i ce(l) (ma) 10 10 2 10 3 10 ? 1 v ce = 10v ta = 25?c t = 2856k i ceo ?ta 10 2 10 ? 10 10 ? 1 ambient temperature ta (?c ) v ce = 10v dark current i ceo ( a) 10 ? ?20 0 40 80 20 60 100 v ce = 10v t = 2856k i ce(l) ?ta 10 10 ? 1 ambient temperature ta (?c ) collector photo current i ce(l) (ma) ?40 0 40 80 120 10 ? 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics t r ?i ce(l) 10 3 10 2 collector photo current i ce(l) (ma) rise time t r ( s) 10 ? 110 10 10 ? v cc = 10v ta = 25?c t f ?i ce(l) 10 3 10 2 collector photo current i ce(l) (ma) fall time t f ( s) 10 ? 110 10 10 ? v cc = 10v ta = 25?c 20 90 100 80 70 60 50 40 30 relative sensitivity s (%) 1 lx p c = 100mw l = 30 lx 5 lx 2 lx 20 lx 10 lx 50 10% 90% sig.in t d t r t f r l v cc sig. out sig. out r l = 1k 500 100 50 10% 90% sig.in t d t r t f r l v cc sig. out sig. out r l = 1k 500 100
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