x band low noise amplifier preliminary specification ? subject to change x_ku_lna_spec_sheet 1 mmic features xlna2s.02*** ? low noise 1.3 db n.f. ? high gain 22 db gain ? frequency range : 9 - 12 ghz ? 50 ? ? ? ? zin / zout ? 10 db input / output return loss ? 8 dbm output power at 1db gain compression ? chip size : 1.4 mm x 0.9 mm ? substrate thickness : 75 m ? bond pad dimensions 100 m x 100 m description the rockwell xlna2s.02 is a phemt low noise amplifier that operates from 9 to 12 ghz .this 2 stage amplifier has 22 db nominal gain with 1.3 db nominal noise figure and 8 dbm p1db compression output power. this mmic is unconditionally stable. absolute maximum ratings symbol parameters/conditions min max units v d 1 2 drain supply voltage 5 volts v g 1 2 gate supply voltage -0.6 0.4 volts id total total drain current 60 ma ig total total gate current 0.1 ma pin rf input power 30 dbm t ch operating channel temperature 150 c t max max assembly temperature 300* c t stg max storage temperature - 65 165 c t base maximum base plate temperature 140 c * 30 minute maximum 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 9 101112131415 xbnf gain nf db gain db nf db ghz sample gain and noise figure characteristics
x band low noise amplifier preliminary specification ? subject to change x_ku_lna_spec_sheet 2 rf and electrical specifications conditions t base = 25 c, z source = z load 50 +/- 5 ? ? ? ? symbol parameters/conditions min typ max units v d 1 2 drain supply voltage 2.5 3 5 volts v g 1 2 gate supply voltage -0.6 -0.2 0.2 volts id total total drain current (@ typ vgs) 10 35 60 ma frequency specified bandwidth edges 9 12 ghz gain** small signal 20 22 24 db ? gain small signal gain flatness <2 db/ghz p1db power output at 1db gain compression 8 10 dbm rl in input port return loss 8 10 db rl out output port return loss 8 10 db isolation reverse isolation 30 40 db nf noise figure 1.3 1.7 db ? each die is fully dc tested and rf s-parameters are measured. a representative sample of dice are tested for noise figure on each wafer. for a nominal charge full 2-port s-parameter data on individual die will be supplied. ? all die will pass visual inspection as dictated by the rules contained in section a of the general notes on rockwell phemt products. ? every die has a unique identifier number on-chip for complete trace- ability. ? a conductive epoxy or a flux-less solder die attach is recommended . the die should be attached to an electrically conductive surface to complete dc and rf ground paths .the ground path inductance should be minimized (<10 ph) to assure stability . ? the front side metal is compatible with thermo-sonic 1 mil wire bonding. the backside metal is compatible with die attach methods not exceeding tmax . ? gaas mmics are esd sensitive. proper precautions should be used when handling these devices. front and backside metal is gold. ? in the event of performance verification, die will be mounted and tested in a standard rockwell approved test fixture for x band. (see section b of the general notes on rockwell phemt products) ** within the temperature range -35 c to +85 c, small signal gain shall not vary by more than +/- 2.0 db and shall remain within the range 18 db to 26 db . under the same conditions the noise figure shall not exceed 2.0 db. *** rockwell science center reserves the right to make improvements in this device, while maintaining all specifications. the general notes on rockwell phemt products will be supplied upon user?s request . in addition to inspection criteria it will contain descriptions, biasing instructions, reliability data and lists of other mmics.
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