sot23 npn silicon planar switching transistor issue 2 ? september 95 j partmarking details - bss79b - ce bss79c - cf absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6v peak pulse current i cm 800 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 75 v i c =10 m a collector-emitter breakdown voltage v (br)ceo 40 v i c =10ma emitter-base breakdown voltage v (br)ebo 6v ie=10 m a collector base cut-off current i cbo 10 10 na m a v cb =60v v cb =60v, t amb =150 o c emitter base cut-off current i ebo 10 na v be =3.0v collector-emitter saturation voltage v ce(sat) 0.3 1.0 v v i c =150ma, i b =15ma i c =500ma, i b =50ma static forward current transfer ratio bss79b bss79c h fe 40 100 120 300 i c =150ma, v ce =10v i c = 150ma, v ce =10v transition frequency f t 250 mhz v ce =20v, i c =20ma f=100mhz collector-base capacitance c obo 8pfv cb =10v, f=1mhz delay time t d 10 ns v cc =30v, i c =150ma i b1 =i b2 =15ma rise time t r 10 ns storage time t s 225 ns v cc =30v, i c =150ma i b1 =i b2 =15ma fall time t f 60 ns bss79b bss79c c b e page number
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