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| inchange semiconductor product specification silicon pnp power transistors mje4350/4351/4352/4353 description ? with to-3pn package ? respectively complement to type mje4340/4341/4342/4343 ? dc current gain h fe =8(min)@i c =16a applications ? for use in high power audio amplifier and switching regulator circuits pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit mje4350 -100 MJE4351 -120 mje4352 -140 v cbo collector-base voltage mje4353 open emitter -160 v mje4350 -100 MJE4351 -120 mje4352 -140 v ceo collector-emitter voltage mje4353 open base -160 v v ebo emitter-base voltage open collector -7 v i c collector current -16 a i cm collector current-peak -20 a i b base current -5 a p c collector power dissipation t c =25 ?? 125 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors mje4350/4351/4352/4353 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit mje4350 -100 MJE4351 -120 mje4352 -140 v ceo(sus) collector-emitter sustaining voltage mje4353 i c =-100ma ;i b =0 -160 v v cesat-1 collector-emitter saturation voltage i c =-8a ;i b =-0.8a -2.0 v v cesat-2 collector-emitter saturation voltage i c =-16a; i b =-2.0a -3.5 v v besat base-emitter saturation voltage i c =-16a; i b =-2.0a -3.9 v v be base-emitter on voltage i c =-16a ; v ce =-4v -3.9 v mje4350 v ce =-50v; i b =0 MJE4351 v ce =-60v; i b =0 mje4352 v ce =-70v; i b =0 i ceo collector cut-off current mje4353 v ce =-80v; i b =0 -0.75 ma i cex collector cut-off current v ce =ratedv cbo ; v be =-1.5v t c =150 ?? -1.0 -5.0 ma i cbo collector cut-off current v cb =ratedv cb ; i e =0 -0.75 ma i ebo emitter cut-off current v eb =-7v; i c =0 -1.0 ma h fe-1 dc current gain i c =-8a ; v ce =-2v 15 h fe-2 dc current gain i c =-16a ; v ce =-4v 8 c ob output capacitance i e =0 ; v cb =-10v;f=0.1mhz 800 pf f t transition frequency i c =-1a ; v ce =-20v;f=0.5mhz 1.0 mhz inchange semiconductor product specification 3 silicon pnp power transistors mje4350/4351/4352/4353 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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